Abstract: The semiconductor device includes: a gate electrode on a semiconductor substrate via a gate insulating film; an offset drain layer in the semiconductor substrate on one side of the gate electrode; a drain layer on the offset drain layer; and a source layer in the semiconductor substrate on another side of the gate electrode. The semiconductor device further includes: a protective film covering the semiconductor substrate; a field plate on the protective film, and having a portion above the offset drain layer; and a field plug connected to the field plate and in the protective film and above the offset drain layer, in such a manner as to avoid reaching the offset drain layer.

Abstract: A method for fabricating a bipolar transistor includes: a first step of implanting, along the normal direction of the principle surface of a first-conductive-type semiconductor single crystalline substrates ions of a second-conductive-type first impurity into the semiconductor single crystalline substrate to form a second-conductive-type collector layer; a second step of implanting, along the direction tilted from the normal direction, ions of a second-conductive-type second impurity into the semiconductor single crystalline substrate at a higher injection energy than that in the ion implantation of the first step to form a buried collector layer in a lower portion of the collector layer; and a third step of forming each of a first-conductive-type base layer and a second-conductive-type emitter layer in a predetermined region of a surface portion of the collector layer.

Abstract: A method for fabricating a bipolar transistor includes: a first step of implanting, along the normal direction of the principle surface of a first-conductive-type semiconductor single crystalline substrate, ions of a second-conductive-type first impurity into the semiconductor single crystalline substrate to form a second-conductive-type collector layer; a second step of implanting, along the direction tilted from the normal direction, ions of a second-conductive-type second impurity into the semiconductor single crystalline substrate at a higher injection energy than that in the ion implantation of the first step to form a buried collector layer in a lower portion of the collector layer; and a third step of forming each of a first-conductive-type base layer and a second-conductive-type emitter layer in a predetermined region of a surface portion of the collector layer.

Abstract: A timing generator contains an oscillator section (10) formed with a plural number of stages (S.sub.1 -S.sub.N) for respectively producing a like number of stage signals (V.sub.S1 -V.sub.SN) that sequentially change signal values at a basic oscillator frequency (f.sub.O). The oscillator section is typically implemented as a ring oscillator. In response to the stage signals, a timing-signal generating section (14) generates one or more timing signals (V.sub.T1 -V.sub.TM), each having at least two transitions corresponding to transitions of two or more of the stage signals. A control section (12), preferably arranged in a phase-locked loop, causes the oscillator frequency and a reference frequency (f.sub.R) to have a substantially fixed relationship.