Patents by Inventor Masaomi MIYAZAWA
Masaomi MIYAZAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230170292Abstract: A semiconductor device includes a first bus bar, a second bus bar, a first terminal, and a second terminal. The first terminal includes one or more planar portions, and the second terminal includes one or more planar portions. The one or more planar portions of the first terminal and the one or more planar portions of the second terminal are arranged parallel to and opposite each other. One of the first bus bar and the second bus bar covers a gap between a portion of the first terminal connected to the first bus bar and a portion of the second terminal connected to the second bus bar in plan view.Type: ApplicationFiled: August 30, 2022Publication date: June 1, 2023Applicant: Mitsubishi Electric CorporationInventors: Masaomi MIYAZAWA, Satoshi MIYAHARA
-
Publication number: 20230005823Abstract: According to the present disclosure, a semiconductor device includes a semiconductor chip, a frame, a projection projecting from the frame, a lead in which a projection insertion portion into which the projection is to be inserted is formed, and which directly contacts the frame to electrically connect the semiconductor chip to the frame and a first bonding material configured to bond the projection to the lead.Type: ApplicationFiled: February 2, 2022Publication date: January 5, 2023Applicant: Mitsubishi Electric CorporationInventor: Masaomi MIYAZAWA
-
Patent number: 10790242Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.Type: GrantFiled: April 16, 2019Date of Patent: September 29, 2020Assignee: Mitsubishi Electric CorporationInventors: Tetsuo Yamashita, Tomohiro Hieda, Masaomi Miyazawa
-
Publication number: 20190244913Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.Type: ApplicationFiled: April 16, 2019Publication date: August 8, 2019Applicant: Mitsubishi Electric CorporationInventors: Tetsuo YAMASHITA, Tomohiro HIEDA, Masaomi MIYAZAWA
-
Patent number: 10347593Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.Type: GrantFiled: December 14, 2017Date of Patent: July 9, 2019Assignee: Mitsubishi Electric CorporationInventors: Tetsuo Yamashita, Tomohiro Hieda, Masaomi Miyazawa
-
Publication number: 20180301421Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.Type: ApplicationFiled: December 14, 2017Publication date: October 18, 2018Applicant: Mitsubishi Electric CorporationInventors: Tetsuo YAMASHITA, Tomohiro HIEDA, Masaomi MIYAZAWA
-
Patent number: 9721861Abstract: A semiconductor device includes a semiconductor element and a ceramic circuit substrate on which the semiconductor element is mounted. The ceramic circuit substrate includes a ceramic substrate having one surface and the other surface facing each other, a metal circuit board joined to the one surface of the ceramic substrate and electrically connected to the semiconductor element, and a metal heat-dissipation plate joined to the other surface of the ceramic substrate. The metal circuit board is greater in thickness than the metal heat-dissipation plate. A surface of the metal heat-dissipation plate on a side opposite to the ceramic substrate is larger in area than a surface of the metal circuit board on a side opposite to the ceramic substrate. Thereby, a semiconductor device capable of suppressing warpage of the ceramic substrate can be achieved.Type: GrantFiled: April 15, 2015Date of Patent: August 1, 2017Assignee: Mitsubishi Electric CorporationInventors: Yoshitaka Otsubo, Takuya Takahashi, Masaomi Miyazawa, Tetsuo Yamashita, Tomohiro Hieda, Mituharu Tabata
-
Patent number: 9397014Abstract: An electrode includes an extending portion extending such that both ends thereof get into a first recessed portion and a second recessed portion provided in a first inner wall and a second inner wall, respectively, facing each other in a lateral direction of a case. The extent to which both the ends of the extending portion get into is set such that positions of both the ends thereof in a case where both the ends are narrowed toward a midpoint therebetween to reduce a length of the extending portion to 70% of the length of the extending portion exist between positions of the first and second inner walls in a case where the first and second inner walls are each narrowed toward a midpoint therebetween by 10% of the distance between the first and second inner walls.Type: GrantFiled: December 10, 2014Date of Patent: July 19, 2016Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Masaomi Miyazawa, Mituharu Tabata, Takuya Takahashi
-
Publication number: 20160095213Abstract: A semiconductor device includes a semiconductor element and a ceramic circuit substrate on which the semiconductor element is mounted. The ceramic circuit substrate includes a ceramic substrate having one surface and the other surface facing each other, a metal circuit board joined to the one surface of the ceramic substrate and electrically connected to the semiconductor element, and a metal heat-dissipation plate joined to the other surface of the ceramic substrate. The metal circuit board is greater in thickness than the metal heat-dissipation plate. A surface of the metal heat-dissipation plate on a side opposite to the ceramic substrate is larger in area than a surface of the metal circuit board on a side opposite to the ceramic substrate. Thereby, a semiconductor device capable of suppressing warpage of the ceramic substrate can be achieved.Type: ApplicationFiled: April 15, 2015Publication date: March 31, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Yoshitaka OTSUBO, Takuya TAKAHASHI, Masaomi MIYAZAWA, Tetsuo YAMASHITA, Tomohiro HIEDA, Mituharu TABATA
-
Patent number: 9171776Abstract: A semiconductor cooling device includes: a cooling medium flow channel, through which a cooling medium for cooling a semiconductor chip flows; a laminar flow section which is provided in a region upstream of the cooling medium flow channel and allows the cooling medium to flow in the form of laminar flow; and a turbulent flow section which is provided in a region downstream of the laminar flow section in the cooling medium flow channel and allows the cooling medium, which flows in the form of laminar flow from the laminar flow section, to flow in the form of turbulent flow.Type: GrantFiled: May 7, 2015Date of Patent: October 27, 2015Assignee: Mitsubishi Electric CorporationInventor: Masaomi Miyazawa
-
Publication number: 20150270186Abstract: An electrode includes an extending portion extending such that both ends thereof get into a first recessed portion and a second recessed portion provided in a first inner wall and a second inner wall, respectively, facing each other in a lateral direction of a case. The extent to which both the ends of the extending portion get into is set such that positions of both the ends thereof in a case where both the ends are narrowed toward a midpoint therebetween to reduce a length of the extending portion to 70% of the length of the extending portion exist between positions of the first and second inner walls in a case where the first and second inner walls are each narrowed toward a midpoint therebetween by 10% of the distance between the first and second inner walls.Type: ApplicationFiled: December 10, 2014Publication date: September 24, 2015Applicant: Mitsubishi Electric CorporationInventors: Masaomi MIYAZAWA, Mituharu TABATA, Takuya TAKAHASHI
-
Patent number: 9123697Abstract: A semiconductor cooling device includes: a cooling medium flow channel, through which a cooling medium for cooling a semiconductor chip flows; a laminar flow section which is provided in a region upstream of the cooling medium flow channel and allows the cooling medium to flow in the form of laminar flow; and a turbulent flow section which is provided in a region downstream of the laminar flow section in the cooling medium flow channel and allows the cooling medium, which flows in the form of laminar flow from the laminar flow section, to flow in the form of turbulent flow.Type: GrantFiled: December 31, 2013Date of Patent: September 1, 2015Assignee: Mitsubishi Electric CorporationInventor: Masaomi Miyazawa
-
Publication number: 20150243581Abstract: A semiconductor cooling device includes: a cooling medium flow channel, through which a cooling medium for cooling a semiconductor chip flows; a laminar flow section which is provided in a region upstream of the cooling medium flow channel and allows the cooling medium to flow in the form of laminar flow; and a turbulent flow section which is provided in a region downstream of the laminar flow section in the cooling medium flow channel and allows the cooling medium, which flows in the form of laminar flow from the laminar flow section, to flow in the form of turbulent flow.Type: ApplicationFiled: May 7, 2015Publication date: August 27, 2015Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Masaomi MIYAZAWA
-
Publication number: 20140319674Abstract: A semiconductor cooling device includes: a cooling medium flow channel, through which a cooling medium for cooling a semiconductor chip flows; a laminar flow section which is provided in a region upstream of the cooling medium flow channel and allows the cooling medium to flow in the form of laminar flow; and a turbulent flow section which is provided in a region downstream of the laminar flow section in the cooling medium flow channel and allows the cooling medium, which flows in the form of laminar flow from the laminar flow section, to flow in the form of turbulent flow.Type: ApplicationFiled: December 31, 2013Publication date: October 30, 2014Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Masaomi MIYAZAWA