Abstract: A master-slice type semiconductor device according to the present invention comprises a cell array on a main surface thereof, the cell array is constituted into a shape of matrix by adjoining channel regions each other, and the channel region has one of a P-channel type and a N-channel type. The cell array is constituted by a plurality of column patterns, and the channel region constituting a first column pattern is the same channel type as the adjoining channel region constituting a second column pattern. As a feature of the structure, the column pattern comprises a basic all including a P-channel region and two N-channel regions which are the same in figure and size.

Abstract: By using a contact including a configuration in which a first pattern 10 having a widthwise dimension W1 in an outer shape substantially equal to a lengthwise dimension L1 in an outer shape and a second pattern 20 having a widthwise dimension W2 in an outer shape smaller than the widthwise dimension W1 in an outer shape of the first pattern are connected to each other, over etching is reduced and unevenness of saggings of a photoresist at the time of exposure or baking is lowered. Further, the area of a contact region where a contact can be disposed is effectively used, so that the area of the contact can be increased and electric resistance can be decreased.