Abstract: The method of manufacturing a semiconductor device comprises; forming an HfSiO film 36 on a silicon substrate 26; exposing the HfSiO film 36 to NH3 gas to thereby form an HfSiON film 38; forming an HfSiO film 40 on the HfSiON film 38; adhering Al to the surface of the HfSiO film 40 to thereby form an Al adhered layer 58 on the surface of the HfSiO film 40; and forming a polysilicon film 42 on the HfSiO film 40 with the Al adhered layer 58 formed on the surface.

Abstract: The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Abstract: A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf1-xAlxO:N film (0.1<x<0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of Hf1-xAlxO (0<x<0.3) having desired characteristics, as a gate insulation film.

Abstract: A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film 18 from being deprived of oxygen, while oxygen anneal is performed after a gate electrode layer 20 has been formed to thereby supplement oxygen. The silicon nitride film 16, which is the permeation preventing film, becomes a silicon oxide nitride film 17 without changing the film thickness, whereby characteristics deterioration of the High-k gate insulation film 18 due to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

Abstract: The method of manufacturing a semiconductor device comprises; forming an HfSiO film 36 on a silicon substrate 26; exposing the HfSiO film 36 to NH3 gas to thereby form an HfSiON film 38; forming an HfSiO film 40 on the HfSiON film 38; adhering Al to the surface of the HfSiO film 40 to thereby form an Al adhered layer 58 on the surface of the HfSiO film 40; and forming a polysilicon film 42 on the HfSiO film 40 with the Al adhered layer 58 formed on the surface.

Abstract: The semiconductor device according to the present invention comprises a gate insulating film 16 formed on a silicon substrate 10 and including a silicon oxide film 12 and a Hf-based high dielectric constant insulating film 14 doped with Al; a gate electrode 18 of a polysilicon film formed on the gate insulating film 16; and a sidewall insulating film 20 formed on the side walls of the gate electrode 18 and the Hf-based high dielectric constant insulating film 14, and the maximum value of the depth-wise concentration distribution of the Al doped in the Hf-based high dielectric constant insulating film 14 is 1×1021-4×1021 atoms/cm3.

Abstract: A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Abstract: A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf1-xAlxO:N film (0.1<x<0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of Hf1-xAlxO (0<x<0.3) having desired characteristics, as a gate insulation film.

Abstract: A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf1-xAlxO:N film (0.1<x<0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of Hf1-xAlxO (0<x<0.3) having desired characteristics, as a gate insulation film.

Abstract: A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.

Abstract: Disclosed is a method of manufacturing a semiconductor device which can form, as a gate insulation film, an oxide film of Hf1-xAlx (0<x<0.3) having a small shift in flat band voltage. The method comprises the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, which contains metal compound of Hf and metal compound of Al in carrier gas, and hydrogen gas to a surface of the heated silicon substrate, and depositing on the silicon substrate an HfAlO film as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD.

Abstract: A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film 18 from being deprived of oxygen, while oxygen anneal is performed after a gate electrode layer 20 has been formed to thereby supplement oxygen. The silicon nitride film 16, which is the permeation preventing film, becomes a silicon oxide nitride film 17 without changing the film thickness, whereby characteristics deterioration of the High-k gate insulation film 18 due to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

Abstract: A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.

Abstract: A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Abstract: The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Abstract: The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1?xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Abstract: A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf1-xAlxO:N film (0.1<x<0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of Hf1-xAlxO (0<x<0.3) having desired characteristics, as a gate insulation film.

Abstract: A semiconductor device has: a silicon substrate; a silicon oxide layer formed on the surface of the silicon substrate; a high dielectric constant insulating film including a first oxide layer formed above the silicon oxide layer and made of a high dielectric constant film having a dielectric constant higher than silicon oxide and a first nitride layer formed above the first oxide layer and made of nitride having an oxygen intercepting capability, or a high dielectric constant insulating film including a first oxide film formed on the silicon oxide layer, a second oxide layer formed on the first oxide layer and a third oxide layer formed on the second oxide layer, the first and third oxide layers having an oxygen diffusion coefficient smaller than the second oxide layer; and a gate electrode formed on the high dielectric constant insulating layer and made of oxidizable material.

Abstract: Disclosed is a method of manufacturing a semiconductor device which can form, as a gate insulation film, an oxide film of Hf1-xAlx (0<x<0.3) having a small shift in flat band voltage. The method comprises the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, which contains metal compound of Hf and metal compound of Al in carrier gas, and hydrogen gas to a surface of the heated silicon substrate, and depositing on the silicon substrate an HfAlO film as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD.

Abstract: The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.