Abstract: To allow an electronic control unit to be replaced with good work efficiency and prevent foreign matter from entering a casing during maintenance work, the connector connection structure includes an internal connector positioned inside a casing, an external connector positioned outside the casing and an electronic control unit electrically connected between the external connector and the electronic control unit wherein the electronic control unit includes a main part that opposes an opening formed in the casing when the internal connector is connected thereto, and a first conductive connection portion and a second conductive connection portion provided on either end of the main part and configured to be connected to the internal connector and the external connector respectively, and a first seal member is provided on an outer periphery of the main part, the first seal member closing the opening when the external connector is not connected to the electronic control unit and the internal connector is connected

Abstract: To prevent electric conductance impairment of an electric connecting part between an electronic control unit and an internal connector in a reliable manner even when the electric connecting part between the electronic control unit and the internal connector is placed in an environment where oil mist or electroconductive substances are present, the electronic control unit includes a main part, a first conductive connection portion provided at a lower end of the main part and configured to be electrically connected to the internal connector, and an outer shell member extending downward so as to surround the first conductive connection portion, and to be open only at a lower end thereof, and wherein the internal connector is provided with a housing including a part defining an annular recess opened upward on an outer periphery thereof, the lower end of the outer shell member being received in the annular recess when the electronic control unit is connected to the internal connector.

Abstract: The electronic device unit includes: a control target device; and an electronic control device, the control target device including: a control target housing; a control target component; and an inner connector, the electronic control device including: an electronic circuit including a circuit board and an electronic control component; and a first connector, which is electrically connected to the electronic control component. The control target housing has formed therein an opening, which allows the electronic control device to be placed in and taken out of the control target housing. When the first connector is connected to the inner connector, the electronic control device is located inside the control target housing.

Abstract: The electronic device unit includes: a control target device; and an electronic control device, the control target device including: a control target housing; a control target component; and an inner connector, the electronic control device including: an electronic circuit including a circuit board and an electronic control component; and a first connector, which is electrically connected to the electronic control component. The control target housing has formed therein an opening, which allows the electronic control device to be placed in and taken out of the control target housing. When the first connector is connected to the inner connector, the electronic control device is located inside the control target housing.

Abstract: An electronic device unit includes a circuit board having: a sealing resin portion in which a region in which an electronic component is mounted is sealed by a sealing resin; and a board end portion exposed from a side of the sealing resin portion. A plurality of connection terminals are provided on the board end portion so as to be aligned in a direction of the side of the sealing resin portion, and a resin portion thicker than the board end portion and having a wall-like projection shape is provided at at least one of side surfaces of the board end portion in the direction of the side. The resin portion is integrally molded with the sealing resin portion of the circuit board and a side surface of the resin portion is press-fitted into an insertion chamber of a connector.

Abstract: An electronic device unit includes a circuit board having: a sealing resin portion in which a region in which an electronic component is mounted is sealed by a sealing resin; and a board end portion exposed from a side of the sealing resin portion. A plurality of connection terminals are provided on the board end portion so as to be aligned in a direction of the side of the sealing resin portion, and a resin portion thicker than the board end portion and having a wall-like projection shape is provided at at least one of side surfaces of the board end portion in the direction of the side. The resin portion is integrally molded with the sealing resin portion of the circuit board and a side surface of the resin portion is press-fitted into an insertion chamber of a connector.

Abstract: To prevent an increase of the number of kinds of components required for offset arrangement, an increase in risk of assembly error and extra time and effort for parts management, in a connector including mutually facing terminal members with contacting portions being offset in the insertion direction. Mutually facing terminal members 20 are formed on components identical in shape. The mutually facing terminal members 20 are secured to a connector housing 12 while being offset in an insertion direction of a double-sided card edge 102 inserted into a receptacle compartment 14 of the connector housing 12.

Abstract: To prevent an increase of the number of kinds of components required for offset arrangement, an increase in risk of assembly error and extra time and effort for parts management, in a connector including mutually facing terminal members with contacting portions being offset in the insertion direction. Mutually facing terminal members 20 are formed on components identical in shape. The mutually facing terminal members 20 are secured to a connector housing 12 while being offset in an insertion direction of a double-sided card edge 102 inserted into a receptacle compartment 14 of the connector housing 12.

Abstract: A nonreciprocal circuit device includes a magnet and a center electrode. The center electrode includes a nonmagnetic substrate having a first surface having a groove, a magnetic body provided on a second surface of the nonmagnetic substrate, and a center electrode conductor, with a portion of the center electrode conductor being arranged in the groove. The magnet applies a direct-current magnetic field to the magnetic body and is disposed in proximity to the magnetic body.

Abstract: A magnetostatic wave element, having a narrow bandwidth range Ba in which an output signal is suppressed centering around frequency fo by 3 dB or more for an input signal with an electric power of Psh or less at a frequency fo, is obtained using substantially Pb-free materials.

Abstract: A nonreciprocal circuit device includes a magnet and a center electrode. The center electrode includes a nonmagnetic substrate having a first surface having a groove, a magnetic body provided on a second surface of the nonmagnetic substrate, and a center electrode conductor, with a portion of the center electrode conductor being arranged in the groove. The magnet applies a direct-current magnetic field to the magnetic body and is disposed in proximity to the magnetic body.

Abstract: A magnetic garnet single crystal film used for a magnetostatic wave device has a Pb content in the range of from more than zero to about 4,000 ppm by weight.

Abstract: A method of producing a magnetic garnet single crystal film by a liquid phase epitaxial process, comprises the steps of: forming a platinum or platinum alloy film in any desired shape having any desired thickness on a nonmagnetic garnet single crystal substrate; and bringing the nonmagnetic garnet single crystal substrate into contact with a magnetic garnet raw material melt containing lead oxide as a flux to grow a magnetic garnet single crystal film on the nonmagnetic garnet single crystal substrate while removing the platinum or platinum alloy from the nonmagnetic garnet single crystal substrate with the flux.

Abstract: A method of producing a microwave device using a magnetic garnet single crystal film involves cutting a garnet signal crystal substrate into chips. Thereafter, a magnetic garnet signal crystal film is grown on the surface of each of the garnet single crystal substrate chips by means of the liquid crystal epitaxial growth method. This method is advantageous in that no breakage of the single crystal substrate occurs during the growth of the magnetic garnet single crystal film, chipping does not occurs and a small variation in thickness of the film among substrates is achieved.

Abstract: A magnetic garnet single crystal film used for a magnetostatic wave device has a Pb content in the range of from more than zero to about 4,000 ppm by weight.

Abstract: A magnetostatic wave device comprises a magnetic garnet single crystal film. The single crystal film magnetic garnet is represented by the general formula of Y3Fe5-x-yInxMyO12 (wherein M is at least one of Ga, Al and Sc, 0.01≦x≦0.45 and 0≦y≦1.2) and the Curie temperature is about 150° C. to 285° C.

Abstract: A magnetostatic wave device comprises a Y.sub.3 Fe.sub.5 O.sub.12 -based magnetic garnet single crystal film, and the magnetic garnet single crystal film contains indium as a substitute for a part of iron, and having a saturation magnetization ranging from 1,800 G to 3,500 G.

Abstract: There is provided a magnetostatic wave device which operates even with a substitution R, A:YIG having a small film thickness and which has a wider operational frequency band. A magnetostatic wave device comprising a magnetic garnet film is provided which is made of a material expressed by a general formula: (Y.sub.1-r R.sub.r).sub.3 (Fe.sub.1-a A.sub.a).sub.5 O.sub.12 where R is at least one selected from among La, Bi, Gd and Lu; A is at least one selected from among Al, Ga, In and Sc; r and a are within the ranges 0.ltoreq.r.ltoreq.1 and 0.ltoreq.a<1, respectively; and r and a can not be zero at the same time. Further, the crystal structure of said magnetic garnet film is a superlattice.

Abstract: A magnetostatic wave device comprising a magnetic garnet single crystalline film having a general formula of R.sub.3-x Ca.sub.x Ma.sub.5-2y+x Zr.sub.y Mb.sub.y-x O.sub.12 wherein R is at least one of Y, La, Bi, Gd, Lu and Sc, and Ma is at least one of Fe, Ga and Al, while Fe is present as an essential component, and Mb is at least one of Mg and Mn, and wherein the conditions of 0.ltoreq.x.ltoreq.1, 0.1.ltoreq.y.ltoreq.1, and x.ltoreq.y are satisfied.

Abstract: Disclosed therein is a magnetostatic wave device that employs a single-crystal thin film of magnetic garnet (which contains iron) characterized in that the magnetic garnet has incorporated indium or tin in an amount of about 10 to 3000 ppm (by weight).