Abstract: The present technology relates to an information processing apparatus capable of more easily determining a maintenance timing by using event data. The information processing apparatus includes a state estimation unit that estimates a state of a grindstone by using event data supplied from an event sensor that outputs, as event data, a temporal change of an electrical signal obtained by photoelectrically converting an optical signal, and outputs a result of the estimation. The present technology can be applied to, for example, an information processing system or the like that tells a maintenance timing of a grindstone of a machine tool.

Abstract: According to an exemplary embodiment, a bubble column-type slurry bed Fischer-Tropsch synthesis reaction process can be provided, in which synthesis gas supplied continuously from the bottom of a reactor contacts suspended catalyst particles to form liquid hydrocarbons, gaseous hydrocarbons and water. Additionally, a slurry of suspended liquid products and catalyst particles can move from the reactor to the lower portion of a separation vessel to separate the catalyst particles and gaseous products. Further, a process can be provided in which the liquid products formed are sent to the separation vessel a process in which liquid products can be derived. Additionally, a process can be provided in which a slurry in which catalyst particles are concentrated is derived from the bottom of the separation vessel and circulated to the bottom of the reactor, are driven by the driving force of synthesis gas without using an external drive power source.

Abstract: A bubble column-type slurry bed reaction system is provided in which an operating system, which synthesizes liquid hydrocarbons by the Fischer-Tropsch (FT) synthesis reaction and separates and derives a catalyst and liquid hydrocarbon products from a slurry composed of gas, liquid and solid phases, can be simplified, and deterioration of catalyst particles caused by attrition and so forth can be reduced.

Abstract: Synthesis gas for FT synthesis is produced using a producing apparatus including an active carbon adsorbing vessel for adsorbing impurities in a natural gas, a hydro-desulfurizer for hydrogenating and desulfurizing sulfur content in the natural gas under a condition of a partial pressure of hydrogen of 100 to 200 kPa, a second hydrogen supplying line for supplying hydrogen to the natural gas between the hydro-desulfurizer and a reactor, the reactor for obtaining synthesis gas by reacting the natural gas, carbon dioxide and steam in the presence of a catalyst for reforming, and a heat recovering boiler for cooling the synthesis gas at a cooling rate of 2000 to 4000° C./second.

Abstract: Synthesis gas for FT synthesis is produced using a producing apparatus including an active carbon adsorbing vessel for adsorbing impurities in a natural gas, a hydro-desulfurizer for hydrogenating and desulfurizing sulfur content in the natural gas under a condition of a partial pressure of hydrogen of 100 to 200 kPa, a second hydrogen supplying line for supplying hydrogen to the natural gas between the hydro-desulfurizer and a reactor, the reactor for obtaining synthesis gas by reacting the natural gas, carbon dioxide and steam in the presence of a catalyst for reforming, and a heat recovering boiler for cooling the synthesis gas at a cooling rate of 2000 to 4000° C./second.

Abstract: A manufacturing method for a nanocrystal light emission substance having a nano structure crystal, doped with an activator and cured with ultraviolet light. The nanocrystal light emission substance is synthesized by a liquid phase co-precipitation process. During the liquid phase reaction, an organic acid, such as acrylic acid or methacrylic acid, is added. Alternatively, a high molecular organic acid, such as polyacrylic or polymethacrylic acid, polystyrene, is added after the liquid phase reaction. The resulting substance is then cured with ultraviolet light.

Abstract: A fluorescent material is disclosed which is excellent in the intensity of color and brightness and suitable for a FED and a precise CRT. The fluorescent material is prepared by co-activating yttrium oxide fluorescent material activated with europium. The means particle size is 10 nm to 100 nm. To prepare the fluorescent material, basic carbonate activated with europium and zinc is used as a precursor which is then baked. The precursor is prepared by a liquid-phase reaction. Specifically, yttrium nitrate, europium nitrate and zinc acetate are allowed to react in a solution together with sodium carbonate. The prepared precursor is baked by a quick heating and cooling As an alternative to this, the precursor is baked together with flux (phosphate of alkali metal).

Abstract: There is provided a novel method for manufacturing a light-emitting material composed of II-VI group semiconductors having a nano structure crystal and which is optimally doped with an activator. In a manufacturing method for the light-emitting material, a II-VI group semiconductor doped with an activator by a liquid phase reaction having a co-precipitation product is formed and an organic acid is added to the liquid phase reaction system. In another manufacturing method for the light-emitting material, a II-VI group semiconductor doped with an activator by a liquid phase reaction having a product co-precipitation is formed and a high molecular organic acid or polystyrene is added after the end of the liquid phase reaction.

Abstract: A color filter composition, a color display device, and a production method of the same with which an increase of the luminance, an increase of the contrast, an increase in the range of color reproduction, and an improvement of the function for preventing reflection of outside light can be achieved. The color filter composition has a spectral characteristic allowing specific light of the visible region to pass therethrough and is composed of fine particles of an inorganic metal oxide containing 15 percent by weight or less of particles having a particle size of 0.1 .mu.m or more based on the weight of all of the particles and contains 70 percent by weight or more of particles having a particle size of 0.01 .mu.m to 0.07 .mu.m based on the weight of all of the particles. A color filter is formed on an inner surface of a panel of a display device by screen printing or heat transfer printing by using this color filter composition.

Abstract: In a cathode-ray tube, a phosphor screen is formed by employing a blue phosphor obtained by mixing Cu with ZnS:Ag, Al in a normal solid phase reaction, then forming the phosphor solution on the inner surface of a panel of a cathode ray tube. The resulting cathode-ray tube can have increased brightness with negligible loss of chromacity. The amount of Cu as a co-activator in the blue phosphor can range between 0.6 to 1.5 ppm. In a preferred embodiment, the blue phosphor has a chromacity y-value of 0.089.

Abstract: A color filter composition, a color display device, and a production method of the same with which an increase of the luminance, an increase of the contrast, an increase in the range of color reproduction, and an improvement of the function for preventing reflection of outside light can be achieved. The color filter composition has a spectral characteristic allowing specific light of the visible region to pass therethrough and is composed of fine particles of an inorganic metal oxide containing 15 percent by weight or less of particles having a particle size of 0.1 .mu.m or more based on the weight of all of the particles and contains 70 percent by weight or more of particles having a particle size of 0.01 .mu.m to 0.07 .mu.m based on the weight of all of the particles. A color filter is formed on an inner surface of a panel of a display device by screen printing or heat transfer printing by using this color filter composition.

Abstract: A method of forming a fluorescent screen, such as a black matrix or a color filter, on a front panel of a cathode ray tube is described. The method comprises the steps of forming a photosensitive adhesion layer on an inner surface of the front panel, exposing the photosensitive adhesion layer through a color selecting electrode having a plurality of slots for reducing adhesion level of exposed area of the photosensitive adhesion layer, bringing a pigment layer provided on a supporting sheet into intimate contact with the photosensitive adhesion layer, applying pressure to the pigment layer and the photosensitive layer, and peeling off the supporting sheet from the pigment layer. Alternatively, a pigment may be dispersed in the photosensitive adhesion pigment layer.

Abstract: A cathode-ray tube includes a phosphor screen having a tricolor phosphor layer composed of a red phosphor, a green phosphor of ZnS:Cu, Al activated with Ni, Fe, or Co, and a blue phosphor of ZnS:Ag activated with Ni, Fe, or Co. The green phosphor and the blue phosphor have a decay intensity of at most 0.5% upon elapse of 8 milliseconds after excitation is removed therefrom. The green phosphor of ZnS:Cu, Al activated with Ni and the blue phosphor of ZnS:Ag activated with Ni have their afterglow characteristics substantially equalized to the afterglow characteristics of the red phosphor of Y.sub.2 O.sub.2 S:Eu.

Abstract: A method of evaluating the characteristics of superconductors, comprising: irradiating light to a superconductor held at a predetermined temperature; detecting light transmitted through the superconductor and composing a spectrum of the transmitted light; and using the obtained spectrum, calculating a ratio of the number of electrons contributing to a normal conduction to the number of electrons contributing to a superconduction in the superconductor, the ratio being effective at said predetermined temperature. A process and an apparatus for forming superconductor films by using the method are also disclosed.

Abstract: Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.

Abstract: A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.

Abstract: An improved semiconductor substrate comprises at least one insulating layer comprising (a) a thin film of amorphous silicon dioxide formed on a base plate comprising single crystal silicon and (b) a thin film of single crystal sapphire superimposed on the silicon dioxide film. A semiconductor substrate may be prepared by forming a first thin film of single crystal sapphire on a base plate comprising single crystal silicon, converting, if desired, the upper surface layer of the silicon base plate into a first thin film of amorphous silicon dioxide by thermal oxidation through the sapphire film, forming a second thin film comprising single crystal silicon on the first sapphire film, forming a second thin film comprising single crystal sapphire on the second silicon film, and then thermally oxidizing the second silicon film through the second sapphire film to form a second film comprising amorphous silicon dioxide.

Abstract: A single crystal of Al.sub.2 O.sub.3 is epitaxially grown on an Si-single crystal of a semiconductor device by a vapor growth method. This vapor growth method employs starting materials of HCl, Al and CO.sub.2. Further, this method advantageouslyemploys a carrier gas to carry the gaseous product of the reaction of HCl with Al. An apparatus for the production of the above-mentioned semiconductor device comprises a chamber means for the reaction of the gaseous product and the single crystal, a reaction chamber for the reaction of Al and HCl, and an introducing tube for introducing CO.sub.2 in the proximity of the Si-single crystal.