Patents by Inventor Masaru Ihara

Masaru Ihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8057744
    Abstract: According to an exemplary embodiment, a bubble column-type slurry bed Fischer-Tropsch synthesis reaction process can be provided, in which synthesis gas supplied continuously from the bottom of a reactor contacts suspended catalyst particles to form liquid hydrocarbons, gaseous hydrocarbons and water. Additionally, a slurry of suspended liquid products and catalyst particles can move from the reactor to the lower portion of a separation vessel to separate the catalyst particles and gaseous products. Further, a process can be provided in which the liquid products formed are sent to the separation vessel a process in which liquid products can be derived. Additionally, a process can be provided in which a slurry in which catalyst particles are concentrated is derived from the bottom of the separation vessel and circulated to the bottom of the reactor, are driven by the driving force of synthesis gas without using an external drive power source.
    Type: Grant
    Filed: December 14, 2005
    Date of Patent: November 15, 2011
    Assignees: Nippon Steel Engineering Co., Ltd., Japan Oil, Gas and Metals National Corporation, Sekiyushigen Kaihatsu Kabushiki Kaisha, Cosmo Oil Co., Ltd., Inpex Corporation
    Inventors: Yasuhiro Onishi, Kenichiro Fujimoto, Masaru Ihara, Yoshifumi Suehiro, Yasumasa Morita, Kiyoshi Inaba, Toshio Shimizu, Osamu Iwamoto
  • Publication number: 20090220389
    Abstract: A bubble column-type slurry bed reaction system is provided in which an operating system, which synthesizes liquid hydrocarbons by the Fischer-Tropsch (FT) synthesis reaction and separates and derives a catalyst and liquid hydrocarbon products from a slurry composed of gas, liquid and solid phases, can be simplified, and deterioration of catalyst particles caused by attrition and so forth can be reduced.
    Type: Application
    Filed: December 14, 2005
    Publication date: September 3, 2009
    Applicants: NIPPON STEEL ENGINEERING CO., LTD., SEKIYUSHIGEN KAIHATSU KABUSHIKI KAISHA
    Inventors: Yasuhiro Onishi, Kenichiro Fujimoto, Masaru Ihara, Yoshifumi Suehiro, Yasumasa Morita, Kiyoshi Inaba, Toshio Shimizu, Osamu Iwamoto
  • Patent number: 7393470
    Abstract: Synthesis gas for FT synthesis is produced using a producing apparatus including an active carbon adsorbing vessel for adsorbing impurities in a natural gas, a hydro-desulfurizer for hydrogenating and desulfurizing sulfur content in the natural gas under a condition of a partial pressure of hydrogen of 100 to 200 kPa, a second hydrogen supplying line for supplying hydrogen to the natural gas between the hydro-desulfurizer and a reactor, the reactor for obtaining synthesis gas by reacting the natural gas, carbon dioxide and steam in the presence of a catalyst for reforming, and a heat recovering boiler for cooling the synthesis gas at a cooling rate of 2000 to 4000° C./second.
    Type: Grant
    Filed: March 25, 2005
    Date of Patent: July 1, 2008
    Assignees: Japan Oil, Gas and Metals National Corporation, Sekiyushigen Kamatsu Kabushiki Kaisha, Cosmo Oil Co. Ltd., Chiyoda Corporation, Nippon Steel Corporation, Inpex Corporation
    Inventors: Masaru Ihara, Yoshifumi Suehiro, Yasumasa Morita, Kiyoshi Inaba, Toshio Shimizu, Osamu Iwamoto, Tomoyuki Mikuriya, Ryuichiro Kajiyama, Ken-ichiro Fujimoto, Yasuhiro Onishi
  • Publication number: 20050220703
    Abstract: Synthesis gas for FT synthesis is produced using a producing apparatus including an active carbon adsorbing vessel for adsorbing impurities in a natural gas, a hydro-desulfurizer for hydrogenating and desulfurizing sulfur content in the natural gas under a condition of a partial pressure of hydrogen of 100 to 200 kPa, a second hydrogen supplying line for supplying hydrogen to the natural gas between the hydro-desulfurizer and a reactor, the reactor for obtaining synthesis gas by reacting the natural gas, carbon dioxide and steam in the presence of a catalyst for reforming, and a heat recovering boiler for cooling the synthesis gas at a cooling rate of 2000 to 4000° C./second.
    Type: Application
    Filed: March 25, 2005
    Publication date: October 6, 2005
    Inventors: Masaru Ihara, Yoshifumi Suehiro, Yasumasa Morita, Kiyoshi Inaba, Toshio Shimizu, Osamu Iwamoto, Tomoyuki Mikuriya, Ryuichiro Kajiyama, Ken-ichiro Fujimoto, Yasuhiro Onishi
  • Patent number: 6447698
    Abstract: A manufacturing method for a nanocrystal light emission substance having a nano structure crystal, doped with an activator and cured with ultraviolet light. The nanocrystal light emission substance is synthesized by a liquid phase co-precipitation process. During the liquid phase reaction, an organic acid, such as acrylic acid or methacrylic acid, is added. Alternatively, a high molecular organic acid, such as polyacrylic or polymethacrylic acid, polystyrene, is added after the liquid phase reaction. The resulting substance is then cured with ultraviolet light.
    Type: Grant
    Filed: September 17, 1999
    Date of Patent: September 10, 2002
    Assignee: Sony Corporation
    Inventors: Masaru Ihara, Igarashi Takahiro, Tsuneo Kusunoki, Katsutoshi Ohno, Mamoru Senna, Tetsuhiko Isobe, Miho Konishi
  • Patent number: 6299797
    Abstract: A fluorescent material is disclosed which is excellent in the intensity of color and brightness and suitable for a FED and a precise CRT. The fluorescent material is prepared by co-activating yttrium oxide fluorescent material activated with europium. The means particle size is 10 nm to 100 nm. To prepare the fluorescent material, basic carbonate activated with europium and zinc is used as a precursor which is then baked. The precursor is prepared by a liquid-phase reaction. Specifically, yttrium nitrate, europium nitrate and zinc acetate are allowed to react in a solution together with sodium carbonate. The prepared precursor is baked by a quick heating and cooling As an alternative to this, the precursor is baked together with flux (phosphate of alkali metal).
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: October 9, 2001
    Assignee: Sony Corporation
    Inventors: Takahiro Igarashi, Masaru Ihara, Tsuneo Kusunoki, Katsutoshi Ohno
  • Patent number: 6117363
    Abstract: There is provided a novel method for manufacturing a light-emitting material composed of II-VI group semiconductors having a nano structure crystal and which is optimally doped with an activator. In a manufacturing method for the light-emitting material, a II-VI group semiconductor doped with an activator by a liquid phase reaction having a co-precipitation product is formed and an organic acid is added to the liquid phase reaction system. In another manufacturing method for the light-emitting material, a II-VI group semiconductor doped with an activator by a liquid phase reaction having a product co-precipitation is formed and a high molecular organic acid or polystyrene is added after the end of the liquid phase reaction.
    Type: Grant
    Filed: March 10, 1998
    Date of Patent: September 12, 2000
    Assignee: Sony Corporation
    Inventors: Masaru Ihara, Katsutoshi Ohno, Mamoru Sennna, Tetsuhiki Isobe, Takahiro Igarashi
  • Patent number: 6093349
    Abstract: A color filter composition, a color display device, and a production method of the same with which an increase of the luminance, an increase of the contrast, an increase in the range of color reproduction, and an improvement of the function for preventing reflection of outside light can be achieved. The color filter composition has a spectral characteristic allowing specific light of the visible region to pass therethrough and is composed of fine particles of an inorganic metal oxide containing 15 percent by weight or less of particles having a particle size of 0.1 .mu.m or more based on the weight of all of the particles and contains 70 percent by weight or more of particles having a particle size of 0.01 .mu.m to 0.07 .mu.m based on the weight of all of the particles. A color filter is formed on an inner surface of a panel of a display device by screen printing or heat transfer printing by using this color filter composition.
    Type: Grant
    Filed: March 10, 1999
    Date of Patent: July 25, 2000
    Assignee: Sony Corporation
    Inventors: Masaru Ihara, Katsutoshi Ohno, Kyoichi Yamamoto, Yoshiaki Shikata, Tomoaki Nanbu
  • Patent number: 6025675
    Abstract: In a cathode-ray tube, a phosphor screen is formed by employing a blue phosphor obtained by mixing Cu with ZnS:Ag, Al in a normal solid phase reaction, then forming the phosphor solution on the inner surface of a panel of a cathode ray tube. The resulting cathode-ray tube can have increased brightness with negligible loss of chromacity. The amount of Cu as a co-activator in the blue phosphor can range between 0.6 to 1.5 ppm. In a preferred embodiment, the blue phosphor has a chromacity y-value of 0.089.
    Type: Grant
    Filed: April 17, 1998
    Date of Patent: February 15, 2000
    Assignee: Sony Corporation
    Inventors: Masaru Ihara, Hiroshi Kato, Katsutoshi Ohno
  • Patent number: 5952137
    Abstract: A color filter composition, a color display device, and a production method of the same with which an increase of the luminance, an increase of the contrast, an increase in the range of color reproduction, and an improvement of the function for preventing reflection of outside light can be achieved. The color filter composition has a spectral characteristic allowing specific light of the visible region to pass therethrough and is composed of fine particles of an inorganic metal oxide containing 15 percent by weight or less of particles having a particle size of 0.1 .mu.m or more based on the weight of all of the particles and contains 70 percent by weight or more of particles having a particle size of 0.01 .mu.m to 0.07 .mu.m based on the weight of all of the particles. A color filter is formed on an inner surface of a panel of a display device by screen printing or heat transfer printing by using this color filter composition.
    Type: Grant
    Filed: April 2, 1997
    Date of Patent: September 14, 1999
    Assignee: Sony Corporation
    Inventors: Masaru Ihara, Katsutoshi Ohno, Kyoichi Yamamoto, Yoshiaki Shikata, Tomoaki Nanbu
  • Patent number: 5942358
    Abstract: A method of forming a fluorescent screen, such as a black matrix or a color filter, on a front panel of a cathode ray tube is described. The method comprises the steps of forming a photosensitive adhesion layer on an inner surface of the front panel, exposing the photosensitive adhesion layer through a color selecting electrode having a plurality of slots for reducing adhesion level of exposed area of the photosensitive adhesion layer, bringing a pigment layer provided on a supporting sheet into intimate contact with the photosensitive adhesion layer, applying pressure to the pigment layer and the photosensitive layer, and peeling off the supporting sheet from the pigment layer. Alternatively, a pigment may be dispersed in the photosensitive adhesion pigment layer.
    Type: Grant
    Filed: August 2, 1996
    Date of Patent: August 24, 1999
    Assignee: Sony Corporation
    Inventors: Masaru Ihara, Katsutoshi Ohno, Hiroshi Uchida, Katsuhiko Kuroda
  • Patent number: 5825124
    Abstract: A cathode-ray tube includes a phosphor screen having a tricolor phosphor layer composed of a red phosphor, a green phosphor of ZnS:Cu, Al activated with Ni, Fe, or Co, and a blue phosphor of ZnS:Ag activated with Ni, Fe, or Co. The green phosphor and the blue phosphor have a decay intensity of at most 0.5% upon elapse of 8 milliseconds after excitation is removed therefrom. The green phosphor of ZnS:Cu, Al activated with Ni and the blue phosphor of ZnS:Ag activated with Ni have their afterglow characteristics substantially equalized to the afterglow characteristics of the red phosphor of Y.sub.2 O.sub.2 S:Eu.
    Type: Grant
    Filed: March 21, 1996
    Date of Patent: October 20, 1998
    Assignee: Sony Corporation
    Inventors: Katsutoshi Ohno, Tsuneo Kusunoki, Kenji Takayanagi, Masaru Ihara
  • Patent number: 5107119
    Abstract: A method of evaluating the characteristics of superconductors, comprising: irradiating light to a superconductor held at a predetermined temperature; detecting light transmitted through the superconductor and composing a spectrum of the transmitted light; and using the obtained spectrum, calculating a ratio of the number of electrons contributing to a normal conduction to the number of electrons contributing to a superconduction in the superconductor, the ratio being effective at said predetermined temperature. A process and an apparatus for forming superconductor films by using the method are also disclosed.
    Type: Grant
    Filed: April 10, 1991
    Date of Patent: April 21, 1992
    Assignee: Fujitsu Limited
    Inventors: Takafumi Kimura, Hiroshi Nakao, Hideki Yamawaki, Masaru Ihara, Keigo Nagasaka
  • Patent number: 5037774
    Abstract: Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.
    Type: Grant
    Filed: July 15, 1987
    Date of Patent: August 6, 1991
    Assignee: Fujitsu Limited
    Inventors: Hideki Yamawaki, Yoshihiro Arimoto, Shigeo Kodama, Takafumi Kimura, Masaru Ihara
  • Patent number: 4931425
    Abstract: A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.
    Type: Grant
    Filed: September 27, 1988
    Date of Patent: June 5, 1990
    Assignee: Fujitsu Limited
    Inventors: Takafumi Kimura, Hideki Yamawaki, Kazuto Ikeda, Masaru Ihara
  • Patent number: 4282543
    Abstract: An improved semiconductor substrate comprises at least one insulating layer comprising (a) a thin film of amorphous silicon dioxide formed on a base plate comprising single crystal silicon and (b) a thin film of single crystal sapphire superimposed on the silicon dioxide film. A semiconductor substrate may be prepared by forming a first thin film of single crystal sapphire on a base plate comprising single crystal silicon, converting, if desired, the upper surface layer of the silicon base plate into a first thin film of amorphous silicon dioxide by thermal oxidation through the sapphire film, forming a second thin film comprising single crystal silicon on the first sapphire film, forming a second thin film comprising single crystal sapphire on the second silicon film, and then thermally oxidizing the second silicon film through the second sapphire film to form a second film comprising amorphous silicon dioxide.
    Type: Grant
    Filed: November 19, 1979
    Date of Patent: August 4, 1981
    Assignee: Fujitsu Limited
    Inventors: Masaru Ihara, Masayuki Jifuku
  • Patent number: 4137108
    Abstract: A single crystal of Al.sub.2 O.sub.3 is epitaxially grown on an Si-single crystal of a semiconductor device by a vapor growth method. This vapor growth method employs starting materials of HCl, Al and CO.sub.2. Further, this method advantageouslyemploys a carrier gas to carry the gaseous product of the reaction of HCl with Al. An apparatus for the production of the above-mentioned semiconductor device comprises a chamber means for the reaction of the gaseous product and the single crystal, a reaction chamber for the reaction of Al and HCl, and an introducing tube for introducing CO.sub.2 in the proximity of the Si-single crystal.
    Type: Grant
    Filed: December 9, 1976
    Date of Patent: January 30, 1979
    Assignee: Fujitsu Limited
    Inventors: Masaru Ihara, Masayuki Jifuku