Abstract: There is a plasma processing apparatus comprising: a conductive chamber made of a first conductive material and connected to a ground potential; a plasma generator configured to generate a plasma in the conductive chamber; a plurality of conductive liners made of a second conductive material different from the first conductive material and arranged in a circumferential direction in the conductive chamber, each conductive liner having a first surface and a second surface opposite to the first surface, the first surface being in contact with a sidewall of the conductive chamber, the second surface being exposed to the plasma, a gap being formed between two adjacent conductive liners among the plurality of conductive liners; and a plurality of fixing mechanisms respectively corresponding to the plurality of conductive liners, each fixing mechanism being configured to fix a corresponding conductive liner to the sidewall of the conductive chamber.

Abstract: A plasma processing apparatus capable of achieving a uniform plasma space therein is provided. The plasma processing apparatus includes a processing vessel, a mounting table, a shield member, a shutter for an opening configured to be moved up and down, a first driving unit and a second driving unit. The processing vessel has a sidewall, and the sidewall is provided with a transfer path through which a processing target object is carried-in/carried-out. The mounting table is provided within the processing vessel. The shield member is provided along an inner surface of the sidewall to surround the mounting table and provided with an opening facing the transfer path. The first driving unit is configured to move the shutter up and down. The second driving unit is configured to move the shutter in a forward-backward direction with respect to the shield member.

Abstract: A heat medium circulation system including: a resin pipe forming at least a portion of a circulation flow path for circulating a heat medium to a temperature control target; a cover surrounding an outer peripheral surface of the resin pipe; and an exhaust pipe connected to a space between the resin pipe and the cover so as to exhaust the heat medium permeating through the resin pipe and released to the space, wherein the cover includes an air supply port configured to introduce air into the space between the resin pipe and the cover while the heat medium is exhausted from the exhaust pipe.

Abstract: There is provision of a cleaning method of a plasma processing apparatus including a plasma treatment chamber for applying plasma treatment to a substrate. The method includes: insulating a part of the plasma treatment chamber, generating plasma of fluorocarbon gas in the plasma treatment chamber, and removing deposits on a non-plasma surface of a space outside of the plasma treatment chamber, by the plasma of the fluorocarbon gas introduced from the plasma treatment chamber to the outside space.

Abstract: A processing apparatus that processes an substrate inside a processing container includes a first electrode disposed inside the processing container, the first electrode being configured to mount the substrate, a second electrode disposed so as to face the first electrode, an electric power supply unit configured to apply high frequency power to the first electrode or the second electrode, a coil disposed on a surface opposite to the surface to which the first electrode or the second electrode faces and on a surface of any one of the first electrode and the second electrode, one end of the coil being connected to the any one of the the first electrode and the second electrode, another end of the coil being connected to ground, and an adjusting mechanism configured to control a magnetic field strength of a magnetic field that is from the coil and passes through the coil.

Abstract: A plasma processing apparatus capable of achieving a uniform plasma space therein is provided. The plasma processing apparatus includes a processing vessel, a mounting table, a shield member, a shutter for an opening configured to be moved up and down, a first driving unit and a second driving unit. The processing vessel has a sidewall, and the sidewall is provided with a transfer path through which a processing target object is carried-in/carried-out. The mounting table is provided within the processing vessel. The shield member is provided along an inner surface of the sidewall to surround the mounting table and provided with an opening facing the transfer path. The first driving unit is configured to move the shutter up and down. The second driving unit is configured to move the shutter in a forward-backward direction with respect to the shield member.

Abstract: There is provision of a cleaning method of a plasma processing apparatus including a plasma treatment chamber for applying plasma treatment to a substrate. The method includes: insulating a part of the plasma treatment chamber, generating plasma of fluorocarbon gas in the plasma treatment chamber, and removing deposits on a non-plasma surface of a space outside of the plasma treatment chamber, by the plasma of the fluorocarbon gas introduced from the plasma treatment chamber to the outside space.

Abstract: An etching method for performing a plasma etching on an object to be processed by using a supplied gas is provided. In the etching method, a temperature of a focus ring is adjusted by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value. A degree of consumption of the focus ring is estimated from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring. The target value of the temperature of the focus ring is corrected based on the estimated degree of consumption of the focus ring.

Abstract: An etching method for performing a plasma etching on an object to be processed by using a supplied gas is provided. In the etching method, a temperature of a focus ring is adjusted by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value. A degree of consumption of the focus ring is estimated from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring. The target value of the temperature of the focus ring is corrected based on the estimated degree of consumption of the focus ring.