Abstract: To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional.

Abstract: A semiconductor laser array apparatus including: a substrate; a plurality of current blocking elements that are stripe shaped and are formed on the substrate; and a plurality of light waveguides that are formed between the plurality of current blocking elements, where at least two adjacent light waveguides are optically connected by removing a part of each current blocking element therebetween.

Abstract: A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.

Abstract: A semiconductor laser array apparatus including: a substrate; a plurality of current blocking elements that are stripe shaped and are formed on the substrate; and a plurality of light waveguides that are formed between the plurality of current blocking elements, where at least two adjacent light waveguides are optically connected by removing a part of each current blocking element therebetween.

Abstract: To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional.

Abstract: A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.

Abstract: A thick resist layer is formed on a thin metal film and the resist layer is dry-etched by using an SiO.sub.2 mask formed selectively on the resist layer, and a thick wiring metal layer is formed by plating method with using the dry-etched resist layer, which has perpendicular side walls as a mask, thereby to form a low resistance and fine-patterned wiring metal layer.

Abstract: An apparatus for making semiconductor devices comprising a block having a slot hole for holding a semiconductor substrate therein, a solution container which has a predetermined number of holes to contain semiconductor solutions therein and is slidably disposed on said block, characterized in that said slot hole has walls having a considerable angle with respect to a horizontal plane and has a solution inlet at the top part of said slot hole and a solution outlet at the bottom part of said slot hole, and has a means to hold said substrate with its principal face substantially parallel to said walls.

Abstract: A light-emitting diode is comprised of:a semiconductor active layer,a semiconductor first clad layer formed on a surface of said semiconductor active layer, anda protrusion formed unitarily on a surface of said first clad layer for facing an input end of a light guide for light coupling therewith.A method of manufacturing the light emitting diode is comprised of the steps offorming a recess on one face of a semiconductor substrate,forming a semiconductor first clad layer on the abovementioned face of the semiconductor substrate, andselectively etching the substrate from the other face thereof so as to form a through-hole reaching said recess on said one face of the semiconductor substrate, thereby exposing at least a protrusion of said semiconductor first clad layer formed in said recess.