Abstract: A semiconductor device includes a first chip having a first via and a second via through the first chip; and a second chip provided on the first chip and having a third via and a fourth via through the second chip. The first chip includes: a first logical operation circuit configured to perform a first logical operation (NOT) on a first address input signal to output a first address output signal to the second chip through the first via; a second logical operation circuit connected to the first logical operation circuit, the second logical operation circuit being configured to perform a second logical operation (XOR) on a second address input signal and the first address output signal to output a second address output signal to the second chip through the second via; and a first activation circuit connected to the second logical operation circuit, the first activation circuit being configured to activate the first chip based on at least the second address output signal.

Abstract: A semiconductor device includes first input/output circuits for a first channel, first input/output pads corresponding to the first input/output circuits, respectively, wherein the first input/output pads are aligned along and extends in a first direction, second input/output circuits for the first channel, second input/output pads corresponding to the second input/output circuits, respectively, wherein the second input/output pads are aligned along and extends in a second direction, and an input circuit between the first input/output pads and the second input/output pads, and connected to a memory to which the input circuit inputs data from the first input/output circuits and the second input/output circuits. The input circuit is positioned such that a first line extending perpendicular to the first direction from one of the first input/output pads and a second line extending perpendicular to the second direction from one of the second input/output pads intersect a portion of the input circuit.

Abstract: According to one embodiment, a semiconductor device includes chips and a first selection circuit. Each of the chips has at least first and second vias for transmitting at least first and second address signals, wherein these chips are stacked to be electrically connected via the first and second vias. The first selection circuit is provided in each chip, and includes a logic circuit that selects a chip based on at least the first and second address signals, and supplies a result of operating the first and second address signals to the subsequent chip.

Abstract: According to one embodiment, M (M represents an integer of 2 or larger) semiconductor chips and through electrodes for N (N represents an integer of 2 or larger) channels are provided. The M semiconductor chips are stacked in sequence. The through electrodes are embedded in the semiconductor chips to connect electrically the semiconductor chips in the direction of stacking. The connection destination of the through electrodes are exchanged between one or more upper and lower layers of the semiconductor chips.

Abstract: A memory device includes a nonvolatile semiconductor memory cell array, a plurality of terminals through which control signals are received to control the memory device, an on-die termination circuit connected to at least one of the terminals and having a variable resistor, and a control circuit. The control circuit is configured to enable the on-die termination circuit in response to an enabling signal to enable the on-die termination circuit, with a resistance of the variable registor at different values depending on whether a control signal is asserted or deasserted when the enabling signal is received.

Abstract: According to one embodiment, there is provided a storage device including a control chip and a plurality of memory chips. The control chip has an input buffer common to the control chip and the plurality of memory chips and electrically connected to an external terminal. A first transmission path going through the input buffer and a second transmission path not going through the input buffer are provided between the external terminal and the plurality of memory chips. In a first mode, the control chip enables the input buffer so as to activate the first transmission path and, in a second mode, disables the input buffer so as to activate the second transmission path.

Abstract: According to one embodiment, electrodes are provided in stacked M (M is an integer of 2 or more) semiconductor chips, a transmission units are provided for the semiconductor chips and, based on a chip identification information on a semiconductor chip in the present stage, transmits the chip identification information on a semiconductor chip in the next stage via the electrodes, or transmit a data for setting the chip identification information, and the direction in which an external signal is sent via the electrodes is opposite to the direction in which the chip identification information is transmitted via the electrodes.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of semiconductor chips and a control unit. The plurality of semiconductor chips is configured to connect to a signal transmission path and is controlled individually by individual chip enable signals. The plurality of semiconductor chips each includes a termination circuit connected to the signal transmission path. When one of the semiconductor chips is selected to input or output data, the control unit activates the termination circuit provided in the semiconductor chip that is not selected based on a first instruction signal and the chip enable signal.

Abstract: According to one embodiment, an amplifier includes a first inverter which inverts and delays a first signal to generate a second signal. A second inverter inverts and delays a third signal to generate a fourth signal. A first transistor includes a gate electrode supplied with the second signal. A second transistor includes a gate electrode supplied with the fourth signal. An output terminal is coupled to one terminal of the second transistor and outputs a fifth signal. A third inverter inverts and delays the fifth signal to generate a sixth signal. A first discharge circuit discharges one terminal of the first transistor and the one terminal of the second transistor based on the first, sixth, or fourth signal, and includes one terminal coupled to the other terminal of each of the first and second transistors.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of semiconductor chips and a control unit. The plurality of semiconductor chips is configured to connect to a signal transmission path and is controlled individually by individual chip enable signals. The plurality of semiconductor chips each includes a termination circuit connected to the signal transmission path. When one of the semiconductor chips is selected to input or output data, the control unit activates the termination circuit provided in the semiconductor chip that is not selected based on a first instruction signal and the chip enable signal.

Abstract: A memory device includes a nonvolatile semiconductor memory cell array, a plurality of terminals through which control signals are received to control the memory device, an on-die termination circuit connected to at least one of the terminals and having a variable resistor, and a control circuit. The control circuit is configured to enable the on-die termination circuit in response to an enabling signal to enable the on-die termination circuit, with a resistance of the variable resister at different values depending on whether a control signal is asserted or deasserted when the enabling signal is received.

Abstract: According to one embodiment, a semiconductor amplifier circuit includes: a first amplifier circuit including first and second P-type transistors; a second amplifier circuit including first and second N-type transistors; and first to seventh current mirror circuits. The first and second current mirror circuits are connected to drains of the first and second P-type transistors. The third and fourth current mirror circuits are connected to drains of the first and second N-type transistors. The sixth current mirror circuit is connected to the first, fourth and fifth current mirror circuits. The seventh current mirror circuit is connected to the second, third and fifth current mirror circuits.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor chip including a first circuit, a second circuit, a first interconnect connected to the first circuit, a second interconnect connected to the second circuit, and a third interconnect connecting the first interconnect and the second interconnect.

Abstract: According to one embodiment, an amplifier includes a first inverter which inverts and delays a first signal to generate a second signal. A second inverter inverts and delays a third signal to generate a fourth signal. A first transistor includes a gate electrode supplied with the second signal. A second transistor includes a gate electrode supplied with the fourth signal. An output terminal is coupled to one terminal of the second transistor and outputs a fifth signal. A third inverter inverts and delays the fifth signal to generate a sixth signal. A first discharge circuit discharges one terminal of the first transistor and the one terminal of the second transistor based on the first, sixth, or fourth signal, and includes one terminal coupled to the other terminal of each of the first and second transistors.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor chip; a first wiring and a second wiring which are provided above a first surface of the first semiconductor chip; a first terminal connected to one end of the first wiring and one end of the second wiring, and connected to an outside; a second terminal connected to the other end of the first wiring; and a third terminal connected to the other end of the second wiring, and connected to the second terminal.

Abstract: According to one embodiment, a semiconductor device includes: a first circuit including a first transistor, a second transistor, the first and second transistors being capable of receiving first and second signals, respectively; a second circuit including a third transistor and a fourth transistor, a gate and one end of the third transistor being connected to one end of the first transistor, the fourth transistor being capable of receiving the first signal, one end of the fourth transistor being connected to the other end of the third transistor; and a third circuit configured to charge or discharge a node being connected to the one end of the first transistor according to the first signal.

Abstract: According to one embodiment, a semiconductor device includes: a first circuit including a first transistor, a second transistor, the first and second transistors being capable of receiving first and second signals, respectively; a second circuit including a third transistor and a fourth transistor, a gate and one end of the third transistor being connected to one end of the first transistor, the fourth transistor being capable of receiving the first signal, one end of the fourth transistor being connected to the other end of the third transistor; and a third circuit configured to charge or discharge a node being connected to the one end of the first transistor according to the first signal.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor chip including a first circuit, a second circuit, a first interconnect connected to the first circuit, a second interconnect connected to the second circuit, and a third interconnect connecting the first interconnect and the second interconnect.

Abstract: According to one embodiment, a semiconductor device includes chips and a first selection circuit. Each of the chips has at least first and second vias for transmitting at least first and second address signals, wherein these chips are stacked to be electrically connected via the first and second vias. The first selection circuit is provided in each chip, and includes a logic circuit that selects a chip based on at least the first and second address signals, and supplies a result of operating the first and second address signals to the subsequent chip.

Abstract: A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.