Abstract: An optical ranging sensor includes an infrared LED encapsulated in a first light-permeable resin section, a light receiving device encapsulated in a second light-permeable resin section, a light-shielding resin member in contact with the first and second resin sections, a drive circuit section for driving the LED, a light receiving device control section for controlling the light receiving device, and a control section for the drive circuit section and light receiving device control section. Under control of the control section, a driving time of the LED coincides with an exposure time of the light receiving device. Further, while the LED is not driven, the light receiving device is also exposed for a time identical to the exposure time. An output difference between outputs at the exposure with driving the LED and at the exposure without driving the LED is calculated, and ranging is performed based on the output difference.

Abstract: An optical distance measuring sensor includes a light receiving element arranged on the same plane as a light emitting element. The light receiving element includes a light receiving unit having a plurality of cells and collecting the light emitted from the light emitting element and reflected by a target object, a flash memory unit storing a predetermined position on the light receiving unit, and a signal processing circuit unit sensing the collection position of the light on the light receiving unit, and measuring the distance to the target object based on a relative positional relationship between the predetermined position stored in the flash memory unit and the collection position of the light on light receiving unit.

Abstract: In one embodiment of the present invention, an output control device is disclosed capable of reducing a chip size and realizing a low cost. An output control device includes a switching transistor controlling an output voltage by having an on/off time ratio controlled and a control IC controlling the on/off time ratio of the switching transistor on the basis of the output voltage controlled by the switching transistor. The switching transistor is made of a lateral power MOSFET.

Abstract: A photocoupler for feeding back output voltage information on a secondary side of a switching power supply circuit through a light signal to control a switching operation on a primary side comprises: a light-emitting element for emitting a light signal flashing based on the output voltage information of the switching power supply circuit; a light-receiving control integrated circuit composed by integrating a light-receiving element composed of a photodiode for receiving the light signal, an amplifier circuit for amplifying an output signal of the light-receiving element, and a switching control circuit for controlling the switching operation of the switching power supply circuit, in one chip, wherein the light-emitting element and the light-receiving control integrated circuit are sealed in one package so that the light signal can be transmitted from the light-emitting element to the light-receiving element.

Abstract: In one embodiment of the present invention, an output control device is disclosed capable of reducing a chip size and realizing a low cost. An output control device includes a switching transistor controlling an output voltage by having an on/off time ratio controlled and a control IC controlling the on/off time ratio of the switching transistor on the basis of the output voltage controlled by the switching transistor. The switching transistor is made of a lateral power MOSFET.

Abstract: A channel isolation region 42 is formed over the entire width of an N-type silicon substrate 41, and photothyristors, in each of which an anode diffusion region 43, a P-gate diffusion region 44, a cathode diffusion region 45 are formed parallel to the channel isolation region 42 over almost the entire width of the N-type silicon substrate 41, are formed in a left-hand portion 40a and in a right-hand portion 40b and are wired inversely parallel. Thus, the inter-channel movement of residual holes during commutation is restrained by the channel isolation region 42, by which commutation failure is suppressed to improve a commutation characteristic. Further, an operating current large enough for controlling a load current of approx. 0.2 A is obtained although a chip is divided by the channel isolation region 42. Therefore, using this bidirectional photothyristor chip makes it possible to implement an inexpensive SSR with a main thyristor eliminated.

Abstract: A Schottky barrier diode 44 is formed between a P-gate diffusion region 33 and an N-type silicon substrate 31 in a photothyristor on a CH1 side and a photothyristor on a CH2 side. With this arrangement, the injection of minority carriers from the P-gate diffusion region 33 to the N-type silicon substrate 31 is restrained to reduce the amount of remaining carriers, and an excessive amount of carriers remaining in the N-type silicon substrate 31 during commutation has a reduced chance of moving toward the opposite channel side, allowing the commutation characteristic to be improved. Therefore, by a combination with an LED, there can be provided a light-fired coupler for firing and controlling the load.

Abstract: A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

Abstract: A channel isolation region 42 is formed over the entire width of an N-type silicon substrate 41, and photothyristors, in each of which an anode diffusion region 43, a P-gate diffusion region 44, a cathode diffusion region 45 are formed parallel to the channel isolation region 42 over almost the entire width of the N-type silicon substrate 41, are formed in a left-hand portion 40a and in a right-hand portion 40b and are wired inversely parallel. Thus, the inter-channel movement of residual holes during commutation is restrained by the channel isolation region 42, by which commutation failure is suppressed to improve a commutation characteristic. Further, an operating current large enough for controlling a load current of approx. 0.2 A is obtained although a chip is divided by the channel isolation region 42. Therefore, using this bidirectional photothyristor chip makes it possible to implement an inexpensive SSR with a main thyristor eliminated.

Abstract: A Schottky barrier diode 44 is formed between a P-gate diffusion region 33 and an N-type silicon substrate 31 in a photothyristor on a CH1 side and a photothyristor on a CH2 side. With this arrangement, the injection of minority carriers from the P-gate diffusion region 33 to the N-type silicon substrate 31 is restrained to reduce the amount of remaining carriers, and an excessive amount of carriers remaining in the N-type silicon substrate 31 during commutation has a reduced chance of moving toward the opposite channel side, allowing the commutation characteristic to be improved. Therefore, by a combination with an LED, there can be provided a light-fired coupler for firing and controlling the load.

Abstract: A photodetector with a built-in circuit includes a semiconductor substrate, an integrated circuit provided on the semiconductor substrate, and a photodiode provided on the semiconductor substrate. The integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.

Abstract: A corrosion-resistant conductive layer (TiW layer) formed of a corrosion-resistant material is formed to extend from a bonding pad portion to an interconnection portion of a light receiving element. A semiconductor laser device according to the present invention includes the light receiving element.

Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

Abstract: A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

Abstract: A circuit-incorporating light receiving device comprises a first semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a diffusion region of the second conductivity type, provided in a first portion of the second semiconductor layer of the first conductivity type, a circuit element provided in the first portion of the first semiconductor layer of the first conductivity type and a second portion of the second semiconductor layer of the first conductivity type. The second semiconductor layer of the first conductivity type and the diffusion region of the second conductivity type form a light detection photodiode portion, and the diffusion region of the second conductivity type has a diffusion depth less than or equal to a penetration depth of short-wavelength signal light.

Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

Abstract: A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.

Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

Abstract: A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer.

Abstract: A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.