Patents by Inventor Masaru Kuramoto

Masaru Kuramoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149595
    Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a light-emitting structure layer with a light-emitting layer, and a second multilayer film reflecting mirror. The second multilayer film reflecting mirror constitutes a resonator between the first and second multilayer film reflecting mirrors. The second multilayer film reflecting mirror includes a first multilayer film, an intermediate film, and a second multilayer film. The first and second multilayer films have low refractive index films and high refractive index films that are alternately stacked. The intermediate film covers an upper surface of the first multilayer film and film has a translucency to a light emitted from the light-emitting layer. The second multilayer film partially covers an upper surface of the intermediate film. The intermediate film has a film thickness based on ½ of a wavelength inside the intermediate film of light emitted from the light-emitting layer.
    Type: Application
    Filed: January 20, 2020
    Publication date: May 12, 2022
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI
  • Publication number: 20220140570
    Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror, the light-emitting structure layer including a light-emitting layer; and a second multilayer film reflecting mirror formed on the light-emitting structure layer, the second multilayer film reflecting mirror constituting a resonator between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The light-emitting structure layer has a high resistance region and a low resistance region having an electrical resistance lower than an electrical resistance of the high resistance region. The low resistance region has a plurality of partial regions arranged into a ring shape while being separated by the high resistance region in a plane of the light-emitting structure layer.
    Type: Application
    Filed: February 5, 2020
    Publication date: May 5, 2022
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI
  • Publication number: 20210384706
    Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror on the substrate, a first semiconductor layer on the first multilayer film reflecting mirror, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer on the light-emitting layer. The second semiconductor layer includes a low resistance region and a high resistance region on an upper surface. The high resistance region is depressed from the low resistance region toward the light-emitting layer outside the low resistance region and impurities of the second conductivity type are inactivated in the high resistance region such that the high resistance region has an electrical resistance higher than an electrical resistance of the low resistance region. A light-transmitting electrode layer is in contact with the low resistance region and the high resistance region, and a second multilayer film reflecting mirror is on the light-transmitting electrode layer.
    Type: Application
    Filed: October 7, 2019
    Publication date: December 9, 2021
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI
  • Publication number: 20210351568
    Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror and including a light-emitting layer, and a second multilayer film reflecting mirror formed on the light-emitting structure layer. A resonator is constituted between the second multilayer film reflecting mirror and the first multilayer film reflecting mirror. The light-emitting structure layer includes a low resistance region and a high resistance region. The low resistance region is disposed in a ring shape between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The high resistance region is formed inside the low resistance region and has an electrical resistance higher than an electrical resistance of the low resistance region.
    Type: Application
    Filed: October 7, 2019
    Publication date: November 11, 2021
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventor: Masaru KURAMOTO
  • Patent number: 11081862
    Abstract: A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: August 3, 2021
    Assignee: SONY CORPORATION
    Inventors: Tatsushi Hamaguchi, Masaru Kuramoto, Yuki Maeda, Noriyuki Futagawa
  • Patent number: 11060699
    Abstract: An illumination device includes a light source configured to generate primary light having a Gaussian intensity distribution, an intensity-distribution converting member configured to convert the primary light to generate secondary light having a top-hat type intensity distribution, a wavelength converter configured to receive the secondary light from a light-receiving surface, generate tertiary light including the secondary light and wavelength-converted light in which a wavelength of the secondary light has been converted, and emit the tertiary light from an emission surface, and an antenna array having a plurality of optical antennas formed on the emission surface of the wavelength converter and arranged at a period larger than an optical wavelength of the secondary light in the wavelength converter.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: July 13, 2021
    Assignees: KYOTO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Shunsuke Murai, Yusuke Yokobayashi, Masaru Kuramoto, Keijiro Takashima, Syousaku Kubo
  • Patent number: 10892601
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 12, 2021
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru Kuramoto, Seiichiro Kobayashi, Tetsuya Takeuchi
  • Publication number: 20200386386
    Abstract: An illumination device includes a light source configured to generate primary light having a Gaussian intensity distribution, an intensity-distribution converting member configured to convert the primary light to generate secondary light having a top-hat type intensity distribution, a wavelength converter configured to receive the secondary light from a light-receiving surface, generate tertiary light including the secondary light and wavelength-converted light in which a wavelength of the secondary light has been converted, and emit the tertiary light from an emission surface, and an antenna array having a plurality of optical antennas formed on the emission surface of the wavelength converter and arranged at a period larger than an optical wavelength of the secondary light in the wavelength converter.
    Type: Application
    Filed: March 2, 2018
    Publication date: December 10, 2020
    Applicants: KYOTO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Shunsuke MURAI, Yusuke YOKOBAYASHI, Masaru KURAMOTO, Keijiro TAKASHIMA, Syousaku KUBO
  • Patent number: 10795250
    Abstract: A lighting apparatus includes a laser source configured to emit a laser beam, a homogenizer optical element that includes a light flux dividing section disposed to face the laser source, configured to divide the laser beam into a plurality of separate laser beams in a plane and make advancing directions of the plurality of separate laser beams different from each other, and a light flux superimposing section formed integrally with the light flux dividing section and superimposing the plurality of separate laser beams on each other in a common radiation region, and a fluorescent material disposed to face the homogenizer optical element, excited by the plurality of separate laser beams superimposed in the radiation region using the light flux superimposing section so as to emit fluorescence.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: October 6, 2020
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Yusuke Yokobayashi, Masaru Kuramoto
  • Patent number: 10700497
    Abstract: Provided is an optical semiconductor device including a laminate structural body 20 in which an n-type compound semiconductor layer 21, an active layer 23, and a p-type compound semiconductor layer 22 are laminated in this order. The active layer 23 includes a multiquantum well structure including a tunnel barrier layer 33, and a compositional variation of a well layer 312 adjacent to the p-type compound semiconductor layer 22 is greater than a compositional variation of another well layer 311. Band gap energy of the well layer 312 adjacent to the p-type compound semiconductor layer 22 is smaller than band gap energy of the other well layer 311. A thickness of the well layer 312 adjacent to the p-type compound semiconductor layer 22 is greater than a thickness of the other well layer 311.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: June 30, 2020
    Assignee: SONY CORPORATION
    Inventors: Masaru Kuramoto, Noriyuki Futagawa, Tatsushi Hamaguchi, Shoichiro Izumi
  • Patent number: 10637209
    Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: April 28, 2020
    Assignee: Sony Corporation
    Inventors: Tatsushi Hamaguchi, Noriyuki Futagawa, Shoichiro Izumi, Masaru Kuramoto
  • Publication number: 20200106243
    Abstract: A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.
    Type: Application
    Filed: December 3, 2019
    Publication date: April 2, 2020
    Applicant: Sony Corporation
    Inventors: Tatsushi Hamaguchi, Masaru Kuramoto, Yuki Maeda, Noriyuki Futagawa
  • Patent number: 10546975
    Abstract: A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc?, and a length along the z-axis is zc?, (zc?/xc?)>(z2/x2) is satisfied.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: January 28, 2020
    Assignee: Sony Corporation
    Inventors: Takashi Tange, Tatsushi Hamaguchi, Masaru Kuramoto
  • Patent number: 10541513
    Abstract: A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: January 21, 2020
    Assignee: Sony Corporation
    Inventors: Tatsushi Hamaguchi, Masaru Kuramoto, Yuki Maeda, Noriyuki Futagawa
  • Publication number: 20190363515
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Application
    Filed: May 22, 2019
    Publication date: November 28, 2019
    Applicants: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI, Tetsuya TAKEUCHI
  • Publication number: 20190250490
    Abstract: A lighting apparatus includes a laser source configured to emit a laser beam, a homogenizer optical element that includes a light flux dividing section disposed to face the laser source, configured to divide the laser beam into a plurality of separate laser beams in a plane and make advancing directions of the plurality of separate laser beams different from each other, and a light flux superimposing section formed integrally with the light flux dividing section and superimposing the plurality of separate laser beams on each other in a common radiation region, and a fluorescent material disposed to face the homogenizer optical element, excited by the plurality of separate laser beams superimposed in the radiation region using the light flux superimposing section so as to emit fluorescence.
    Type: Application
    Filed: February 5, 2019
    Publication date: August 15, 2019
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Yusuke YOKOBAYASHI, Masaru KURAMOTO
  • Publication number: 20190157842
    Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 23, 2019
    Inventors: Tatsushi HAMAGUCHI, Noriyuki FUTAGAWA, Shoichiro IZUMI, Masaru KURAMOTO
  • Publication number: 20190148594
    Abstract: A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc?, and a length along the z-axis is zc?, (zc?/xc?)>(z2/x2) is satisfied.
    Type: Application
    Filed: December 20, 2018
    Publication date: May 16, 2019
    Inventors: Takashi TANGE, Tatsushi HAMAGUCHI, Masaru KURAMOTO
  • Patent number: 10256609
    Abstract: A surface-emitting laser according to one embodiment of the technology includes a laser element section that includes a first multi-layer film reflecting mirror, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, a second multi-layer film reflecting mirror, a nitride semiconductor layer of the second conductivity type, and a light output surface in this order. The laser element section further includes an electrode that injects a current into the active layer.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: April 9, 2019
    Assignee: Sony Corporation
    Inventors: Shoichiro Izumi, Tatsushi Hamaguchi, Noriyuki Futagawa, Masaru Kuramoto
  • Patent number: 10199799
    Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: February 5, 2019
    Assignee: Sony Corporation
    Inventors: Tatsushi Hamaguchi, Noriyuki Futagawa, Shoichiro Izumi, Masaru Kuramoto