Abstract: In obtaining a photomask blank 1 by disposing a sputtering target in a vacuum chamber and forming thin films 3, 4, and 5 with a three-layer construction of CrN/CrC/CrON over a transparent substrate 2 by reactive sputtering, the thin films are formed in a mixed gas atmosphere containing helium, and the helium gas flux in the mixed gas is controlled such that the crystal grain diameter of the CrC thin film, which is the thickest film, will be 3 to 7 nm. This yields a photomask blank having thin films with low film stress, having good film quality, and which can be produced at a high yield in mass production.

Abstract: There is provided a manufacturing apparatus and method able to manufacture a phase shift mask blank in which a total number of particles and pinholes having a diameter larger than about a half of an exposure wavelength in a light semi-transmission film is 0.1 or less per square centimeter. In a DC magnetron sputtering apparatus for manufacturing a halftone phase shift mask blank, for example, a target plane is disposed downwards with respect to a gravity direction, a whole-surface erosion cathode is used, a corner portion 5a of an end of a target and a corner portion of an earth shield are chamfered (R processed), a target end 5b, an exposed backing plate surface 4b and the surface of an earth shield 12 are roughened, and the earth shield 12 is disposed above a target plane d (on a backing plate side).

Abstract: For efficiently manufacturing half-tone phase shifting mask blanks having uniform product qualities, which enables the prevention of optical property variations when the blanks are mass-produced, there is provided a process for manufacturing half-tone phase shifting mask blanks each having a phase shifting film containing at least one half-tone film on a transparent substrate, comprising the step of providing a target containing a metal and silicon, and carrying out reactive sputtering in an atmosphere containing a reactive gas, to form said half-tone film on said transparent substrate, wherein the formation of the half-tone film by said reactive sputtering is carried out using, as said target, a target having a metal/silicon compositional ratio selected so as to give a predetermined optical property of the half-tone film, at a reactive gas flow rate selected from a region where a discharge characteristic is stabilized against a change in the flow rate of the reactive gas.

Abstract: To provide a method for manufacturing a phase shift mask blank hating a light translucent film or a light translucent portion having the designated phase angle and transmittance and being superior in film characteristics of chemical resistance, light resistance, and internal stress. The invention is characterized by having a translucent film on a transparent substrate, wherein thermal treatment of the translucent film is implemented at more than 150° C. after forming the translucent film comprising nitrogen, metal, and silicon as a main component on said transparent substrate.

Abstract: There is provided a manufacturing apparatus and method able to manufacture a phase shift mask blank in which a total number of particles and pinholes having a diameter larger than about a half of an exposure wavelength in a light semi-transmission film is 0.1 or less per square centimeter. In a DC magnetron sputtering apparatus for manufacturing a halftone phase shift mask blank, for example, a target plane is disposed downwards with respect to a gravity direction, a whole-surface erosion cathode is used, a corner portion 5a of an end of a target and a corner portion of an earth shield are chamfered (R processed), a target end 5b, an exposed backing plate surface 4b and the surface of an earth shield 12 are roughened, and the earth shield 12 is disposed above a target plane d (on a backing plate side).

Abstract: A method of manufacturing a photomask blank having at least a film for forming a mask pattern on a transparent substrate comprises the steps of causing a sputtering atmosphere to contain at least a helium gas to form a film for forming the mask pattern by sputtering, and heating the transparent substrate during or after the film forming step.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: There is provided a manufacturing apparatus and method able to manufacture a phase shift mask blank in which a total number of particles and pinholes having a diameter larger than about a half of an exposure wavelength in a light semi-transmission film is 0.1 or less per square centimeter. In a DC magnetron sputtering apparatus for manufacturing a halftone phase shift mask blank, for example, a target plane is disposed downwards with respect to a gravity direction, a whole-surface erosion cathode is used, a corner portion 5a of an end of a target and a corner portion of an earth shield are chamfered (R processed), a target end 5b, an exposed backing plate surface 4b and the surface of an earth shield 12 are roughened, and the earth shield 12 is disposed above a target plane d (on a backing plate side).

Abstract: To provide a method for manufacturing a phase shift mask blank having a light translucent film or a light translucent portion having the designated phase angle and transmittance and being superior in film characteristics of chemical resistance, light resistance, and internal stress. The invention is characterized by having a translucent film on a transparent substrate, wherein thermal treatment of the translucent film is implemented at more than 150° C. after forming the translucent film comprising nitrogen, metal, and silicon as a main component on said transparent substrate.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: An object is to provide acid-resistant, highly reliable phase shift masks, and phase shift mask blanks, wherewith high-precision patterning is possible.A halftone phase shift mask blank comprising a transparent substrate 10, a halftone material film 11 laminated on that transparent substrate, and a metal film 12 laminated on that halftone material film, wherein the metal film is formed by a plurality of metal films having different etching rates, and the etching rate for the metal film positioned on the transparent substrate side is set so that it is faster, either in stages or continuously, than the etching rate of the metal film positioned on the surface side.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: A phase shift mask comprises a transparent substrate (1) provided with a mask pattern formed by a light transmitting portion (4) for transmitting effective light beams having an intensity which substantially contributes to exposure and a light translucent portion (2) for transmitting ineffective light beams having an intensity which does not substantially contribute to exposure. The light translucent portion (2) is for phase shifting the ineffective light beams transmitted therethrough to make the ineffective light beams be different in phase from the effective light beams transmitted through the light transmitting portion (4) that the effective and the ineffective light beams passing through an area in the vicinity of a boundary between the light transmitting portion (4) and the light translucent portion (2) cancel each other so as to assure an excellent contrast at the boundary.

Abstract: A light semitransmittable film of a half tone type phase shift mask blank is formed from a thin film comprising a material including oxygen, nitrogen, silicon and a metal as main constitutional components. In this case, the above-mentioned thin film is formed on a transparent substrate by a reactive sputtering process using a mixed target of molybdenum and silicon. At this time, a mixed gas of an inert gas and nitrous oxide is allowed to flow as an atmosphere gas, and the flow rate of the nitrous oxide gas is controlled within the range of 25 sccm or less to adjust the flow rate, whereby transmittance and film thickness can be controlled.

Abstract: A phase shift mask comprises a transparent substrate (1) provided with a mask pattern formed by a light transmitting portion (4) for transmitting effective light beams having an intensity which substantially contributes to exposure and a light translucent portion (2) for transmitting ineffective light beams having an intensity which does not substantially contribute to exposure. The light translucent portion (2) is for phase shifting the ineffective light beams transmitted therethrough to make the ineffective light beams be different in phase from the effective light beams transmitted through the light transmitting portion (4) that the effective and the ineffective light beams passing through an area in the vicinity of a boundary between the light transmitting portion (4) and the light translucent portion (2) cancel each other so as to assure an excellent contrast at the boundary.

Abstract: A phase shift mask comprises a transparent substrate (1) provided with a mask pattern formed by a light transmitting portion (4) for transmitting effective light beams having an intensity which substantially contributes to exposure and a light translucent portion (2) for transmitting ineffective light beams having an intensity which does not substantially contribute to exposure. The light translucent portion (2) is for phase shifting the ineffective light beams transmitted therethrough to make the ineffective light beams be different in phase from the effective light beams transmitted through the light transmitting portion (4) that the effective and the ineffective light beams passing through an area in the vicinity of a boundary between the light transmitting portion (4) and the light translucent portion (2) cancel each other so as to assure an excellent contrast at the boundary.