Abstract: A treatment device includes a flexible sheath; a wire configured to be inserted into the sheath; a first treatment member disposed at distal side from the wire; a second treatment member disposed at a distal side from the first treatment member; and a protection member configured to cover the second treatment member when the first treatment member projects from a distal end of the sheath.

Abstract: A resin particle includes a fluorescent colorant and a binder resin. The fluorescent colorant is bound to the binder resin by a chemical bond.

Abstract: A medical coating agent contains a polymer including a structural unit (A) derived from an ethylenically unsaturated monomer having a urethane bond. The polymer has a glass transition temperature of ?25° C. or lower in a saturated hydration state, the state being defined as such a hydration state of the polymer that the top of the endothermic peak attributed to melting of ice emerges at 0° C. in a DSC curve obtained when the polymer which has been hydrated is heated by means of a differential scanning calorimeter (DSC) at a rate of 5° C./minute.

Abstract: A method for producing a resin fine particle includes dissolving or melting an oily mixture containing at least a polyester resin, a base, and a basic dye while applying a shearing force to the oily mixture, and emulsifying the dissolved or molten oily mixture by adding a surfactant and an aqueous medium while applying a shearing force to the dissolved or molten oily mixture to prepare a dispersion liquid of the resin fine particle. The resin fine particle includes the polyester resin and the basic dye, has a volume average particle diameter of 0.05 ?m or more and 1 ?m or less, and has a ratio of a concentration of the basic dye in a center of gravity portion of the resin fine particle to a concentration of the basic dye in a surface layer portion having a depth of 10 nm or less from a surface of the resin fine particle of 0.8 or more.

Abstract: A processing method of a wafer includes trimming the wafer along its outer peripheral edge while causing a cutting blade to cut from a front surface into a chamfered portion to a depth greater than a finish thickness, so that an annular stepped portion is formed in an outer peripheral surplus region. A protective member is bonded to a side of the front surface of the wafer, and the wafer is ground from its back surface to thin the wafer to a finish thickness. Between trimming and grinding, a laser beam is applied to the stepped portion, so that annular modified layers which are to be fractured under a pressing force to be applied by the grinding are formed in the stepped portion, whereby the fractured fragments of the stepped portion are subdivided.

Abstract: Disclosed is a processing method of a wafer having a first surface and a second surface by arranging a thermocompression bonding sheet on the first surface and processing the second surface. The processing method includes a plasma processing step of subjecting the first surface to plasma processing, and also subjecting a third surface of the thermocompression bonding sheet, the third surface facing the first surface, to plasma processing, a thermocompression bonding step of bringing the third surface into contact with the first surface, heating the thermocompression bonding sheet, and thermocompression bonding the thermocompression bonding sheet to the first surface, and a processing step of holding the wafer at the thermocompression bonding sheet on a chuck table with the second surface of the wafer exposed upward, and processing the second surface.

Abstract: A coating device includes: a coating liquid holding part provided with an upper opening portion and a lower opening portion and holding a coating liquid that is supplied from a coating liquid supply part; and an annular body that is disposed inside the coating liquid holding part, through which a cylindrical body penetrating the upper opening portion and the lower opening portion of the coating liquid holding part penetrates, and in which the coating liquid held by the coating liquid holding part flows in from an upper side and flows out from a lower side with a relative movement to the cylindrical body, the annular body being installed to be relatively displaceable along an installation surface intersecting a direction of the relative movement with respect to the coating liquid holding part.

Abstract: A DC-DC converter according to one or more embodiments is disclosed that may include: a drive voltage switching circuit of a drive circuit that drives a synchronous rectification MOS transistor. The drive voltage switching circuit may switch a connection so that the drive circuit supplies power from the output voltage to the drive circuit in response to the drive voltage for supplying power to the drive circuit being set to be lower than the output voltage. The drive voltage switching circuit may switch a connection so that the drive circuit supplies power from the drive voltage in response to the drive voltage for supplying power to the drive circuit being set to be higher than the output voltage.

Abstract: A holding jig has a plate shape and is interposed between a workpiece with a circular plate shape and a chuck table when the workpiece is held by the chuck table in a grinding apparatus including the chuck table and a grinding unit including a grinding wheel. The holding jig has a first surface, a second surface on the opposite side of the first surface, and an outer circumferential surface that connects the first surface and the second surface. An altered layer that reaches a central region of the second surface from a central region of the first surface is formed. The material of the main component of the holding jig is the same as the material of the main component of the workpiece.

Abstract: A control unit of a laser processing apparatus includes: a reference image storage section that images streets before formation of modified layers by an imaging unit and stores the captured image as a reference image; a calculation section that compares the reference image stored in the reference image storage section with an image of a wafer held by a chuck table that is captured by the imaging unit, and calculates the degree of agreement of the two images; and a decision section that decides whether the wafer is an unprocessed wafer not formed with the modified layers in the case where the degree of agreement calculated by the calculation section is more than a first predetermined value, and decides whether the wafer is a processed wafer formed with the modified layers in the case where the degree of agreement is equal to or less than a second predetermined value.

Abstract: A processing method of a wafer includes a water-soluble resin application step of applying a water-soluble resin to a front surface of the wafer, a modified-layer forming step of applying a laser beam of a wavelength that has transmissivity for the wafer, from a back surface of the wafer with a focal point of the laser beam positioned corresponding to each of dividing lines inside the wafer, thereby forming modified layers along the each of the dividing lines, a resin removing step of removing the wafer-soluble resin from the front surface of the wafer, and a dividing step of applying an external force to the wafer, thereby dividing the wafer into individual device chips.

Abstract: A chip treating method includes a first tape affixing step of affixing a first tape to a circular wafer, a ring frame unit forming step of removing a central part of the wafer to form a ring frame unit having an opening, and a chip disposing step of disposing chips on the first tape exposed in the opening.

Abstract: A method of handling a wafer includes a frame unit forming step of forming a frame unit by placing the wafer in a central opening of an annular frame, affixing a dicing tape to a surface of the annular frame, and affixing the wafer to the dicing tape, a dividing step of processing the wafer along projected dicing lines thereon to divide the wafer into individual device chips including respective devices, a package unit forming step of forming a package unit by affixing a sheet to another surface of the annular frame and surrounding the wafer with the dicing tape and the sheet, and a delivery step of delivering the package unit.

Abstract: A verification method for device chips, includes a providing step of providing a wafer having a front surface with a plurality of devices formed thereon and demarcated by streets, the devices including non-defective devices and defective devices that are distinguished from each other based on an electrical characteristic, a dividing step of dividing the wafer into individual device chips along the streets, a defective device chip extracting step of extracting defective device chips from the individual device chips, the defective device chips corresponding to the defective devices and being defective in the electrical characteristic, and a verification step of verifying a physical characteristic of each of the extracted defective device chips.

Abstract: A direct current to direct current converter is disclosed that controls an output voltage based on an error signal between a feedback voltage and a target voltage. A direct current to direct current converter according to one or more embodiments may include a temperature sensor, a reference voltage generator circuit that generates a reference voltage, a compensation calculator that calculates a compensation value from a temperature detected from the temperature sensor using a function of temperature, a compensator that corrects a target initial value by the compensation value to generate the target value, and a digital-to-analog converter that converts the target value to the target voltage based on the reference voltage.

Abstract: The disclosure is a heat treatment furnace which heats an element wire for a wire electrode to perform a heat diffusion treatment and includes: first, second and third rotary electrodes to which a voltage is applied; a motor that rotationally drives the rotary electrodes; and a control device. The first, second and third rotary electrodes are arranged in a manner that the element wire is laid in a V-shape or an I-shape in an order of the second rotary electrode, the first rotary electrode and the third rotary electrode from the upstream side in a travel direction of the element wire. The element wire is caused to travel, a voltage is applied to the first, second and third rotary electrodes, and a current flows through and heats the element wire which travels in a first heating section and a second heating section.

Abstract: A wafer processing method includes forming a start point of division along division lines, providing, on a front surface of the wafer, a protective member for protecting the front surface of the wafer, grinding a back surface of the wafer to a desired thickness, forming division grooves in the division lines to divide the wafer into individual device chips, providing an expandable sheet to the back surface of the wafer and removing the protective member from the front surface of the wafer, coating the front surface of the wafer with an adhesive liquid having flowability, expanding and shrinking the sheet so as to allow the adhesive liquid to enter each of the division grooves and to discharge the adhesive liquid from the division grooves, and removing the adhesive liquid from the front surface of the wafer to clean a side surface of each of the division grooves.

Abstract: Provided is a wafer processing method including a back surface film processing step of removing or roughening a back surface film that is applied to the back surface of the wafer, a protective member providing step of providing a protective member to a front surface of the wafer before or after the back surface film processing step is carried out, and a back surface grinding step of holding the protective member side on a chuck table and grinding the back surface of the wafer with grinding stones to thin the back surface of the wafer to a desired thickness.

Abstract: A chuck table includes a holding plate having a holding surface for holding the wafer under suction, and a frame body that supports the holding plate thereon and transmits a negative pressure or a positive pressure to the holding surface. The holding plate is formed such that a plurality of cleaved portions are included through cleavage of the holding plate into a plurality of blocks along a plurality of modified layers formed by applying a laser beam of a wavelength, which has transmissivity through the holding plate, with a focal point thereof positioned inside the holding plate, and the negative pressure or the positive pressure is transmitted from the cleaved portions to the holding surface. A grinding machine and a manufacturing method of the chuck table for holding the wafer are also disclosed.

Abstract: A grinding apparatus includes a chuck table for holding a wafer, a grinding unit including, in a rotatable manner, a grinding wheel on which a plurality of grindstones for grinding the wafer held by the chuck table are disposed in an annular pattern, and a grinding water supply unit for supplying grinding water to the grindstones and the wafer. The chuck table includes a porous plate having a holding surface for holding the wafer under suction and a frame body that supports an outer periphery and a bottom surface of the porous plate and transmits a negative pressure and a positive pressure to the holding surface, and the frame body is formed with a plurality of grooves extending from the holding surface side to a side surface.