Abstract: An aircraft lamp includes: a lamp outer housing configured by a lamp housing having an opening and a cover attached to the lamp housing in a state where the opening is closed, wherein an internal space is formed in the lamp housing as a first arrangement space; and a lamp unit that includes a light source module provided with a light source, an attaching base to which the light source module is attached, and a power receiving connector attached to the attaching base to supply power to the light source, wherein the lamp unit is configured to be detachable with respect to the lamp housing. The lamp housing includes an insertion hole communicating with the first arrangement space. The lamp housing is provided with an arrangement case portion having a second arrangement space opened on an outer surface side of the lamp housing.

Abstract: A processing method of a wafer includes a water-soluble resin application step of applying a water-soluble resin to a front surface of the wafer, a modified-layer forming step of applying a laser beam of a wavelength that has transmissivity for the wafer, from a back surface of the wafer with a focal point of the laser beam positioned corresponding to each of dividing lines inside the wafer, thereby forming modified layers along the each of the dividing lines, a resin removing step of removing the wafer-soluble resin from the front surface of the wafer, and a dividing step of applying an external force to the wafer, thereby dividing the wafer into individual device chips.

Abstract: There is provided a three-dimensional object printing apparatus including an imaging device fixed to a base and imaging an object located inside an imaging range, a first robot supporting a head having a nozzle for discharging a liquid and changing a position and a posture of the head, and a second robot supporting a three-dimensional workpiece and changes a position and a posture of the workpiece. The three-dimensional object printing apparatus performs a material feeding step of causing the second robot to move the workpiece from an outside to an inside of the imaging range, and a printing step of causing the head to discharge the liquid to the workpiece while at least one of the first robot and the second robot relatively moves the head and the workpiece inside the imaging range.

Abstract: A multilayer ceramic electronic device includes a multilayer chip having a plurality of dielectric layers and a plurality of internal electrode layers facing each other through each of the plurality of dielectric layers, an external electrode that is provided on an end face of the multilayer chip in a second direction orthogonal to a first direction in which the plurality of internal electrode layers face each other, and has a plurality of glass portions that are spaced from each other on a surface of the external electrode, and a plated layer that is provided on the external electrode and has discontinuous portions on the plurality of glass portions.

Abstract: A chip treating method includes a first tape affixing step of affixing a first tape to a circular wafer, a ring frame unit forming step of removing a central part of the wafer to form a ring frame unit having an opening, and a chip disposing step of disposing chips on the first tape exposed in the opening.

Abstract: A verification method for device chips, includes a providing step of providing a wafer having a front surface with a plurality of devices formed thereon and demarcated by streets, the devices including non-defective devices and defective devices that are distinguished from each other based on an electrical characteristic, a dividing step of dividing the wafer into individual device chips along the streets, a defective device chip extracting step of extracting defective device chips from the individual device chips, the defective device chips corresponding to the defective devices and being defective in the electrical characteristic, and a verification step of verifying a physical characteristic of each of the extracted defective device chips.

Abstract: A method of handling a wafer includes a frame unit forming step of forming a frame unit by placing the wafer in a central opening of an annular frame, affixing a dicing tape to a surface of the annular frame, and affixing the wafer to the dicing tape, a dividing step of processing the wafer along projected dicing lines thereon to divide the wafer into individual device chips including respective devices, a package unit forming step of forming a package unit by affixing a sheet to another surface of the annular frame and surrounding the wafer with the dicing tape and the sheet, and a delivery step of delivering the package unit.

Abstract: A direct current to direct current converter is disclosed that controls an output voltage based on an error signal between a feedback voltage and a target voltage. A direct current to direct current converter according to one or more embodiments may include a temperature sensor, a reference voltage generator circuit that generates a reference voltage, a compensation calculator that calculates a compensation value from a temperature detected from the temperature sensor using a function of temperature, a compensator that corrects a target initial value by the compensation value to generate the target value, and a digital-to-analog converter that converts the target value to the target voltage based on the reference voltage.

Abstract: The disclosure is a heat treatment furnace which heats an element wire for a wire electrode to perform a heat diffusion treatment and includes: first, second and third rotary electrodes to which a voltage is applied; a motor that rotationally drives the rotary electrodes; and a control device. The first, second and third rotary electrodes are arranged in a manner that the element wire is laid in a V-shape or an I-shape in an order of the second rotary electrode, the first rotary electrode and the third rotary electrode from the upstream side in a travel direction of the element wire. The element wire is caused to travel, a voltage is applied to the first, second and third rotary electrodes, and a current flows through and heats the element wire which travels in a first heating section and a second heating section.

Abstract: A wafer processing method includes forming a start point of division along division lines, providing, on a front surface of the wafer, a protective member for protecting the front surface of the wafer, grinding a back surface of the wafer to a desired thickness, forming division grooves in the division lines to divide the wafer into individual device chips, providing an expandable sheet to the back surface of the wafer and removing the protective member from the front surface of the wafer, coating the front surface of the wafer with an adhesive liquid having flowability, expanding and shrinking the sheet so as to allow the adhesive liquid to enter each of the division grooves and to discharge the adhesive liquid from the division grooves, and removing the adhesive liquid from the front surface of the wafer to clean a side surface of each of the division grooves.

Abstract: Provided is a wafer processing method including a back surface film processing step of removing or roughening a back surface film that is applied to the back surface of the wafer, a protective member providing step of providing a protective member to a front surface of the wafer before or after the back surface film processing step is carried out, and a back surface grinding step of holding the protective member side on a chuck table and grinding the back surface of the wafer with grinding stones to thin the back surface of the wafer to a desired thickness.

Abstract: A chuck table includes a holding plate having a holding surface for holding the wafer under suction, and a frame body that supports the holding plate thereon and transmits a negative pressure or a positive pressure to the holding surface. The holding plate is formed such that a plurality of cleaved portions are included through cleavage of the holding plate into a plurality of blocks along a plurality of modified layers formed by applying a laser beam of a wavelength, which has transmissivity through the holding plate, with a focal point thereof positioned inside the holding plate, and the negative pressure or the positive pressure is transmitted from the cleaved portions to the holding surface. A grinding machine and a manufacturing method of the chuck table for holding the wafer are also disclosed.

Abstract: A grinding apparatus includes a chuck table for holding a wafer, a grinding unit including, in a rotatable manner, a grinding wheel on which a plurality of grindstones for grinding the wafer held by the chuck table are disposed in an annular pattern, and a grinding water supply unit for supplying grinding water to the grindstones and the wafer. The chuck table includes a porous plate having a holding surface for holding the wafer under suction and a frame body that supports an outer periphery and a bottom surface of the porous plate and transmits a negative pressure and a positive pressure to the holding surface, and the frame body is formed with a plurality of grooves extending from the holding surface side to a side surface.

Abstract: A cleaning assembly includes a substrate having a lower surface to be held on a holding unit disposed in a processing apparatus and a cleaning member disposed on an upper surface of the substrate. A suction surface of a conveying unit is cleaned by an action of the cleaning member in a state in which the cleaning assembly is held on the holding unit.

Abstract: A processing method of a wafer includes a modified layer forming step of positioning the focal point of a laser beam with a wavelength having transmissibility with respect to the wafer to the inside of a planned dividing line and executing irradiation along the planned dividing line to form modified layers inside and a water-soluble resin coating step of coating the front surface of the wafer with a water-soluble resin before or after the modified layer forming step. The processing method also includes a dividing step of expanding a dicing tape to divide the wafer into individual device chips together with the water-soluble resin with which the front surface of the wafer is coated and a modified layer removal step of executing plasma etching and removing the modified layers that remain at the side surfaces of the device chips in a state in which the dicing tape is expanded and the front surfaces of the individual device chips are coated with the water-soluble resin.

Abstract: A holding table manufacturing method includes forming a plurality of first grooves in a front surface of a plate-shaped body, forming a plurality of second grooves in a back surface of the plate-shaped body, laying, on one another, a plurality of the plate-shaped bodies formed respectively with a plurality of the first grooves and a plurality of the second grooves and uniting the plate-shaped bodies together to form a suction plate, and accommodating the suction plate in an accommodating recess of a frame body to form a holding table. The first grooves and the second grooves do not reach side surfaces of the plate-shaped body, the first grooves and the second grooves communicate with each other, and the thickness of the suction plate is larger than the depth of the accommodating recess.

Abstract: A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a low-viscosity resin applying step of coating the face side of the wafer with a first liquid resin of low viscosity to cover an area of the wafer where the plurality of devices are present, a high-viscosity resin applying step of, after the low-viscosity resin applying step, coating the face side of the wafer with a second liquid resin of higher viscosity than the first liquid resin in overlapping relation to the first liquid resin, a resin curing step of curing the first liquid resin and the second liquid resin that have coated the face side of the wafer into a protective film, and a planarizing step of planarizing the protective film.

Abstract: A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a resin applying step of coating the face side of the wafer with a liquid resin to cover an area of the wafer where the plurality of devices are present, a resin curing step of curing the liquid resin into a protective film, a protective tape laying step of laying a protective tape on an upper surface of the protective film, and a planarizing step of planarizing a face side of the protective tape.

Abstract: A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a resin applying step of coating the face side of the wafer with a liquid resin to cover an area of the wafer where the plurality of devices are present, a resin curing step of curing the liquid resin into a protective film, and a planarizing step of planarizing the protective film.

Abstract: A processing method includes a holding step of holding a workpiece by a chuck table including a holding surface that holds the workpiece in an upper surface and a sheet covering step of covering the upper surface of the chuck table in addition to the workpiece by a sheet having transmissibility. The processing method also includes a close contact step of generating a suction force for the holding surface of the chuck table and reducing the pressure on a region covered by the sheet to bring the workpiece into close contact with the upper surface of the chuck table by an atmospheric pressure applied to the sheet and a modified layer forming step of positioning the focal point of a laser beam inside the workpiece through the sheet and irradiating the workpiece with the laser beam to form a modified layer.