Abstract: A method of mounting an electronic part includes, providing a liquid at a surface of the electronic part or a suction end of a suction nozzle, attaching the electronic part to a suction end of a suction nozzle via the liquid, suctioning the liquid from the suction end to hold the electronic part at the suction end, and mounting the electronic part onto a substrate. And an apparatus for mounting an electronic part includes a liquid supplier which provides a liquid on a surface of the electronic part, and a suction nozzle which suctions the liquid and holds the electronic part in which the suction nozzle mounts the electronic part onto a substrate.

Abstract: A through hole 2 in a circuit board 1 and to be joined to a lead 5 in a surface mounting component 6 is prepared from a material such as nickel, and palladium having a thermal conductivity equal to or less than 100 W/m.K, the circuit board 1 involving a alloy layer composed of at least a member selected from elements of solder 8, a pad 7, and the lead 5 in a solder joined site of the lead 5 and the pad 7, whereby a quantity of heat transmitted to the joined site via the through hole 2 is reduced at the time when wave-soldering is applied to the back of the circuit board 1 after the surface mounting component 6 was mounted, so that the joined site is maintained at a temperature equal to or less than a melting point of the alloy layer, and hence, exfoliation in an interface of the joined site is prevented, and reliability in the joint of the lead 5 and the pad 7 is elevated.

Abstract: A through hole 2 in a circuit board 1 and to be joined to a lead 5 in a surface mounting component 6 is prepared from a material such as nickel, and palladium having a thermal conductivity equal to or less than 100 W/m.K, the circuit board 1 involving a alloy layer composed of at least a member selected from elements of solder 8, a pad 7, and the lead 5 in a solder joined site of the lead 5 and the pad 7, whereby a quantity of heat transmitted to the joined site via the through hole 2 is reduced at the time when wave-soldering is applied to the back of the circuit board 1 after the surface mounting component 6 was mounted, so that the joined site is maintained at a temperature equal to or less than a melting point of the alloy layer, and hence, exfoliation in an interface of the joined site is prevented, and reliability in the joint of the lead 5 and the pad 7 is elevated.

Abstract: A semiconductor apparatus is provided which includes a lateral high-voltage semiconductor device which comprises a silicon substrate, a pair of main electrodes formed on the silicon substrate, and a silicon oxide film formed on the silicon substrate, such that at least a part of the silicon oxide film is located between the main electrodes. The semiconductor device further includes a voltage withstanding structure formed on the silicon oxide film, which structure includes a first silicon nitride film having a refractive index of not lower than 2.8, and a second silicon nitride film formed on the first silicon nitride film and having a refractive index of not higher than 2.2.

Abstract: A semiconductor apparatus is provided which includes a lateral high-voltage semiconductor device which comprises a silicon substrate, a pair of main electrodes formed on the silicon substrate, and a silicon oxide film formed on the silicon substrate, such that at least a part of the silicon oxide film is located between the main electrodes. The semiconductor device further includes a voltage withstanding structure formed on the silicon oxide film, which structure includes a first silicon nitride film having a refractive index of not lower than 2.8, and a second silicon nitride film formed on the first silicon nitride film and having a refractive index of not higher than 2.2.

Abstract: A semiconductor apparatus is provided which includes a lateral high-voltage semiconductor device which comprises a silicon substrate, a pair of main electrodes formed on the silicon substrate, and a silicon oxide film formed on the silicon substrate, such that at least a part of the silicon oxide film is located between the main electrodes. The semiconductor device further includes a voltage withstanding structure formed on the silicon oxide film, which structure includes a first silicon nitride film having a refractive index of not lower than 2.8, and a second silicon nitride film formed on the first silicon nitride film and having a refractive index of not higher than 2.2.