Patents by Inventor Masaru Sasago

Masaru Sasago has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200239313
    Abstract: Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.
    Type: Application
    Filed: August 7, 2018
    Publication date: July 30, 2020
    Inventors: NOBUYUKI MATSUZAWA, MASARU SASAGO, JUN'ICHI NAKA
  • Patent number: 9917066
    Abstract: A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: March 13, 2018
    Assignee: Panasonic Corporation
    Inventors: Nobuo Aoi, Masaru Sasago, Yoshihiro Mori, Takeshi Kawabata, Takashi Yui, Toshio Fujii
  • Patent number: 9291889
    Abstract: An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(?/NA)×M or less (where ? is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: March 22, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yoshimasa Yoshioka, Akio Misaka, Shigeo Irie, Hiroshi Sakaue, Masaru Sasago
  • Patent number: 9046783
    Abstract: A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate, which is exposed from the opening. Widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: June 2, 2015
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Akio Misaka, Masaru Sasago
  • Publication number: 20140327157
    Abstract: A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip.
    Type: Application
    Filed: July 16, 2014
    Publication date: November 6, 2014
    Inventors: NOBUO AOI, MASARU SASAGO, YOSHIHIRO MORI, TAKESHI KAWABATA, TAKASHI YUI, TOSHIO FUJII
  • Publication number: 20140308604
    Abstract: An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(?/NA)×M or less (where ? is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern.
    Type: Application
    Filed: June 26, 2014
    Publication date: October 16, 2014
    Inventors: Yoshimasa YOSHIOKA, Akio MISAKA, Shigeo IRIE, Hiroshi SAKAUE, Masaru SASAGO
  • Publication number: 20130260293
    Abstract: A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate, which is exposed from the opening. Widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position.
    Type: Application
    Filed: April 4, 2013
    Publication date: October 3, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Akio MISAKA, Masaru SASAGO
  • Patent number: 8268535
    Abstract: After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
    Type: Grant
    Filed: April 12, 2011
    Date of Patent: September 18, 2012
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endo, Masaru Sasago
  • Publication number: 20120009795
    Abstract: A resist film (102) made of a chemically amplified resist material including a polymer containing an acid leaving group and a group in which a lactone is replaced with hydrogen in an OH group of phenol is formed on a substrate (101). The resist film (102) is then selectively irradiated with exposure light, thereby performing pattern exposure. After the pattern exposure, the resist film (102) is heated, and then developed, thereby forming a resist pattern (102a) out of the resist film (102).
    Type: Application
    Filed: September 20, 2011
    Publication date: January 12, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Masayuki ENDOU, Masaru Sasago
  • Patent number: 8088565
    Abstract: An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: January 3, 2012
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endo, Masaru Sasago
  • Patent number: 8080364
    Abstract: After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: December 20, 2011
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endo, Masaru Sasago
  • Patent number: 8067148
    Abstract: A resist film of a positive type containing a photoacid generator is formed on a substrate. Then, pattern exposure is performed by selectively irradiating the resist film with exposure light. Thereafter, first heating is performed on the resist film subjected to the pattern exposure. After the heating, first development is performed on the resist film, thereby forming a first resist pattern. Subsequently, the first resist pattern is exposed to a solution containing a thermal acid generator and containing neither polymer nor a cross-linking agent. After the exposure, second heating is performed on the first resist pattern. Second development is then performed on the first resist pattern, thereby forming a second resist pattern made of the first resist pattern having a reduced size.
    Type: Grant
    Filed: May 14, 2010
    Date of Patent: November 29, 2011
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endou, Masaru Sasago
  • Patent number: 7998658
    Abstract: A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: August 16, 2011
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endou, Masaru Sasago
  • Patent number: 7998663
    Abstract: After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: August 16, 2011
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endo, Masaru Sasago
  • Publication number: 20110186544
    Abstract: A block copolymer film is formed on a substrate. Then, the block copolymer film is annealed in an inert-gas atmosphere, for example, in a neon atmosphere. This places the outside (mainly the upper portion) of the block copolymer film in a nonpolar state, thereby strongly drawing, for example, a monomer unit having hydrophobic characteristics outside the block copolymer film to accelerate self-assembly. This results in an improvement in throughput in self-assembled pattern formation of the block copolymer film.
    Type: Application
    Filed: April 13, 2011
    Publication date: August 4, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Masayuki ENDOU, Masaru SASAGO
  • Publication number: 20110189616
    Abstract: After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
    Type: Application
    Filed: April 12, 2011
    Publication date: August 4, 2011
    Applicant: Panasonic Corporation
    Inventors: Masayuki ENDO, Masaru Sasago
  • Publication number: 20110177454
    Abstract: First, a resist film is formed on a substrate from a resist material including cyclic oligomer which does not contain any acid-labile group, is soluble in alkali, and is a trimer or a higher multimer; a molecular compound containing an acid-labile group; a photoacid generator; and no polymer. Then, pattern exposure is performed by selectively irradiating the formed resist film with exposure light of extreme ultraviolet. The resist film after the pattern exposure is heated, and then, the heated resist film is developed to form a resist pattern from the resist film.
    Type: Application
    Filed: April 4, 2011
    Publication date: July 21, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Masayuki Endou, Masaru Sasago
  • Publication number: 20110136048
    Abstract: A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.
    Type: Application
    Filed: February 16, 2011
    Publication date: June 9, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Tadami SHIMIZU, Akio MISAKA, Masaru SASAGO
  • Patent number: 7947432
    Abstract: After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: May 24, 2011
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endo, Masaru Sasago
  • Patent number: 7943285
    Abstract: After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: May 17, 2011
    Assignee: Panasonic Corporation
    Inventors: Masayuki Endo, Masaru Sasago