Abstract: An electromechanical transducer element includes a first electrode, a second electrode, and a piezoelectric material. The piezoelectric material is disposed between the first electrode and the second electrode and deformable with a voltage applied in accordance with a drive signal. The piezoelectric material is made of a composite oxide having a perovskite structure preferentially oriented in at least one of a (100) plane and a (001) plane. A drop in diffraction intensity is included in a rocking curve corresponding to at least one of a (200) plane and a (002) plane measured at a position of 2? where the diffraction intensity is largest at a peak of diffraction intensity corresponding to the (200) plane out of peaks of diffraction intensity measured by an X-ray diffraction ?-2? method.

Abstract: A PZT-film laminated structure includes a substrate, a lower electrode on the substrate, an orientation control layer on the lower electrode, a PZT layer on the orientation control layer, and an upper electrode on the PZT layer. The PZT layer has a (100) or (001) main orientation in which a peak intensity of PZT (100) or (001) is 90% or greater relative to a peak intensity of all PZT peaks in an X-ray diffraction measurement. A ratio of a total value of a secondary ion intensity of Cl relative to a total value of a secondary ion intensity of Ti in the PZT layer is equal to or smaller than 0.03 when the secondary ion intensity of Cl and the secondary ion intensity of Ti in the PZT layer are measured in a direction of thickness of the PZT layer with a magnetic-field secondary ion mass spectrometry.

Abstract: An electromechanical transducer element includes a first electrode, a second electrode, and a piezoelectric material. The piezoelectric material is disposed between the first electrode and the second electrode and deformable with a voltage applied in accordance with a drive signal. The piezoelectric material is made of a composite oxide having a perovskite structure preferentially oriented in at least one of a (100) plane and a (001) plane. A drop in diffraction intensity is included in a rocking curve corresponding to at least one of a (200) plane and a (002) plane measured at a position of 2? where the diffraction intensity is largest at a peak of diffraction intensity corresponding to the (200) plane out of peaks of diffraction intensity measured by an X-ray diffraction 0-20 method.

Abstract: A PZT-film laminated structure includes a substrate, a lower electrode on the substrate, an orientation control layer on the lower electrode, a PZT layer on the orientation control layer, and an upper electrode on the PZT layer. The PZT layer has a (100) or (001) main orientation in which a peak intensity of PZT (100) or (001) is 90% or greater relative to a peak intensity of all PZT peaks in an X-ray diffraction measurement. A ratio of a total value of a secondary ion intensity of Cl relative to a total value of a secondary ion intensity of Ti in the PZT layer is equal to or smaller than 0.03 when the secondary ion intensity of Cl and the secondary ion intensity of Ti in the PZT layer are measured in a direction of thickness of the PZT layer with a magnetic-field secondary ion mass spectrometry.

Abstract: A piezoelectric thin film element includes a substrate, a vibration plate provided on the substrate, a lower electrode provided on the vibration plate, the lower electrode including at least a platinum metal film or an iridium metal film, a piezoelectric film provided on the lower electrode, the piezoelectric film including a polycrystalline body, and an upper electrode provided on the piezoelectric film, the lower electrode being provided on an upper portion of a titanium oxide film formed on the vibration plate, the lower electrode including a platinum metal film or an iridium metal film formed on the titanium oxide film and conductive oxide formed on the platinum metal film or the iridium metal film, and the platinum metal film or the iridium metal film being a precise film.

Abstract: A manufacturing method of an electromechanical transducing device includes forming a vibration plate on a substrate; forming a first electrode made of a metal on the vibration plate; forming a second electrode made of an electrically conductive oxide on the first electrode; coating a surface modification material and carrying out surface modification of only the first electrode; forming an electromechanical transducing film on the second electrode; and forming a third electrode made of an electrically conductive oxide on the electromechanical transducing film.

Abstract: An electromechanical transducer includes a first electrode mounted on one of a substrate and a base film, an electromechanical transducer film mounted on the first electrode and made of a piezoelectric substance having a perovskite crystal structure, and a second electrode mounted on the electromechanical transducer film. The electromechanical transducer film includes a {100} plane preferentially oriented to be orthogonal to a thickness direction of the electromechanical transducer film and has a full width at half maximum corresponding to a {200} plane in an X-ray diffraction measurement curve in 2?-? scan that is measured by emitting an X-ray beam onto a surface of the electromechanical transducer film at an incident angle ?. The full width at half maximum is not greater than 10 degrees.

Abstract: A piezoelectric actuator includes a vibrating plate, a lower electrode provided on the vibrating plate, including a platinum film and a titanium oxide film formed on the platinum film, a piezoelectric thin film provided on the lower electrode, and an upper electrode provided on the piezoelectric thin film, in which the titanium oxide film is provided between the platinum film and the piezoelectric thin film.

Abstract: An electromechanical conversion element for converting an electric signal into mechanical displacement or converting mechanical displacement into an electric signal, includes a bottom electrode in which an alumina film, a metal film, and a conductive oxide film are sequentially laminated; an electromechanical conversion film disposed on the conductive oxide film of the bottom electrode; and a top electrode disposed on the electromechanical conversion film, wherein the metal film is solid.

Abstract: An electromechanical transducer includes a first electrode mounted on one of a substrate and a base film, an electromechanical transducer film mounted on the first electrode and made of a piezoelectric substance having a perovskite crystal structure, and a second electrode mounted on the electromechanical transducer film. The electromechanical transducer film includes a {100} plane preferentially oriented to be orthogonal to a thickness direction of the electromechanical transducer film and has a full width at half maximum corresponding to a {200} plane in an X-ray diffraction measurement curve in 2?-? scan that is measured by emitting an X-ray beam onto a surface of the electromechanical transducer film at an incident angle ?. The full width at half maximum is not greater than 10 degrees.

Abstract: A piezoelectric thin film element includes a vibration plate, a lower electrode provided on the vibration plate and made of a conductive oxide, a piezoelectric thin film provided on the lower electrode and made of a polycrystalline substance, and an upper electrode provided on the piezoelectric thin film, wherein the lower electrode includes a titanium oxide film formed on the vibration plate, a platinum film formed on the titanium oxide film, and a conductive oxide film formed on the platinum film and, the platinum film and the conductive oxide film being a solid film with no holes.

Abstract: A piezoelectric thin film element includes a substrate, a vibration plate provided on the substrate, a lower electrode provided on the vibration plate, the lower electrode including at least a platinum metal film or an iridium metal film, a piezoelectric film provided on the lower electrode, the piezoelectric film including a polycrystalline body, and an upper electrode provided on the piezoelectric film, the lower electrode being provided on an upper portion of a titanium oxide film formed on the vibration plate, the lower electrode including a platinum metal film or an iridium metal film formed on the titanium oxide film and conductive oxide formed on the platinum metal film or the iridium metal film, and the platinum metal film or the iridium metal film being a precise film.

Abstract: Disclosed is an electromechanical conversion element, including an electromechanical conversion film including a PZT, an upper electrode formed on a top of the electromechanical conversion film and including a first strontium ruthenium oxide, and a lower electrode formed on a bottom of the electromechanical conversion film and including a second strontium ruthenium oxide, wherein Sr-pzt/Sr-sr?0.01, wherein Sr-pzt is a SIMS intensity for a secondary ion of strontium of the PZT at a position of ½ of a thickness of the electromechanical conversion film and Sr-sr is a SIMS intensity for a secondary ion of strontium of the second strontium ruthenium oxide at a position of ½ of a thickness of the lower electrode.

Abstract: Disclosed is an electromechanical transducer element that includes an electromechanical transducer film formed of a complex oxide (PZT) including lead (Pb), zirconium (Zr), and titanium (Ti). The electromechanical transducer film is formed by laminating plural PZT thin films until a thickness of the formed electromechanical transducer film becomes a predetermined thickness. When an atomic weight ratio (Pb/(Zr+Ti)) of average Pb included in the formed electromechanical transducer film is denoted by Pb(avg) and an atomic weight ratio (Pb/(Zr+Ti)) of Pb in any one of laminate interfaces of the plural PZT thin films is denoted by Pb(interface), the Pb(avg) is greater than or equal to 100 atomic percentage (at %) and less than or equal to 110 atomic percentage (at %), and a fluctuation ratio ?Pb=Pb(avg)?Pb(interface) of Pb in the laminate interface is less than or equal to 20 percent.

Abstract: A piezoelectric thin film element includes a vibration plate, a lower electrode provided on the vibration plate and made of a conductive oxide, a piezoelectric thin film provided on the lower electrode and made of a polycrystalline substance, and an upper electrode provided on the piezoelectric thin film, wherein the lower electrode includes a titanium oxide film formed on the vibration plate, a platinum film formed on the titanium oxide film, and a conductive oxide film formed on the platinum film and, the platinum film and the conductive oxide film being a solid film with no holes.

Abstract: An electromechanical conversion element for converting an electric signal into mechanical displacement or converting mechanical displacement into an electric signal, includes a bottom electrode in which an alumina film, a metal film, and a conductive oxide film are sequentially laminated; an electromechanical conversion film disposed on the conductive oxide film of the bottom electrode; and a top electrode disposed on the electromechanical conversion film, wherein the metal film is solid.

Abstract: A manufacturing method of an electromechanical transducing device includes forming a vibration plate on a substrate; forming a first electrode made of a metal on the vibration plate; forming a second electrode made of an electrically conductive oxide on the first electrode; coating a surface modification material and carrying out surface modification of only the first electrode; forming an electromechanical transducing film on the second electrode; and forming a third electrode made of an electrically conductive oxide on the electromechanical transducing film.

Abstract: A multilayer optical recording medium including at least multiple information layers each having at least a phase change recording layer capable of recording information by laser irradiation and a reflection layer, wherein each information layer other than the innermost information layer as seen from a side of the laser irradiation has at least a lower protection layer, the phase change recording layer, an upper protection layer, the reflection layer and an optical transmission layer, the upper protection layer and the optical transmission layer in each information layer other than the innermost information layer as seen from the side of the laser irradiation are composed of an Sn oxide-containing material and a thickness of the upper protection layer in each information layer other than the innermost information layer as seen from the side of the laser irradiation is 2 nm to 15 nm is provided.

Abstract: Disclosed is an electromechanical conversion element, including an electromechanical conversion film including a PIT, an upper electrode formed on a top of the electromechanical conversion film and including a first strontium ruthenium oxide, and a lower electrode formed on a bottom of the electromechanical conversion film and including a second strontium ruthenium oxide, wherein Sr-pzt/Sr-sr?0.01, wherein Sr-pzt is a SIMS intensity for a secondary ion of strontium of the PZT at a position of ½ of a thickness of the electromechanical conversion film and Sr-sr is a SIMS intensity for a secondary ion of strontium of the second strontium ruthenium oxide at a position of ½ of a thickness of the lower electrode.

Abstract: Disclosed is an electromechanical transducer element that includes an electromechanical transducer film formed of a complex oxide (PZT) including lead (Pb), zirconium (Zr), and titanium (Ti). The electromechanical transducer film is formed by laminating plural PZT thin films until a thickness of the formed electromechanical transducer film becomes a predetermined thickness. When an atomic weight ratio (Pb/(Zr+Ti)) of average Pb included in the formed electromechanical transducer film is denoted by Pb(avg) and an atomic weight ratio (Pb/(Zr+Ti)) of Pb in any one of laminate interfaces of the plural PZT thin films is denoted by Pb(interface), the Pb(avg) is greater than or equal to 100 atomic percentage (at %) and less than or equal to 110 atomic percentage (at %), and a fluctuation ratio ?Pb=Pb(avg)?Pb(interface) of Pb in the laminate interface is less than or equal to 20 percent.