Patents by Inventor Masaru Umeda
Masaru Umeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11335783Abstract: A FeFET and a method of its manufacture are provided, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm<dr<150 nm, without impairing the data retention property of not less than 105 seconds and the data rewrite endurance property of not less than 108 times, of those that have hitherto been developed, and the FeFET allowing a memory window of 0.40 V or more when a sweep amplitude of the gate voltage is not more than 3.3 V.Type: GrantFiled: May 8, 2020Date of Patent: May 17, 2022Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, WACOM R&D CORPORATIONInventors: Shigeki Sakai, Mitsue Takahashi, Masaki Kusuhara, Masayuki Toda, Masaru Umeda, Yoshikazu Sasaki
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Patent number: 11069713Abstract: A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.Type: GrantFiled: July 3, 2017Date of Patent: July 20, 2021Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, WACOMInventors: Mitsue Takahashi, Shigeki Sakai, Masaki Kusuhara, Masayuki Toda, Masaru Umeda, Yoshikazu Sasaki
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Publication number: 20200279927Abstract: [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm<dr<150, without impairing the data retention property of not less than 105 seconds and the data rewrite withstand property of not less than 108 times, of those that have hitherto been developed, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts. [Means for Solving] In methods of making a device in which an insulator, a film made of constituent elements of a bismuth layered perovskite crystalline ferroelectric and a metal are sequentially formed in the indicated order on a semiconductor substrate and thereafter are annealed for ferroelectric crystallization, thereby preparing the device composed of the semiconductor, insulator, ferroelectric and metal, a method of making a semiconductor ferroelectric memory element in which the film is composed of Ca.Type: ApplicationFiled: May 8, 2020Publication date: September 3, 2020Inventors: Shigeki SAKAI, Mitsue TAKAHASHI, Masaki KUSUHARA, Masayuki TODA, Masaru UMEDA, Yoshikazu SASAKI
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Patent number: 10686043Abstract: [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm<dr<150, without impairing the data retention property of not less than 105 seconds and the data rewrite withstand property of not less than 108 times, of those that have hitherto been developed, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts. [Means for Solving] In methods of making a device in which an insulator, a film made of constituent elements of a bismuth layered perovskite crystalline ferroelectric and a metal are sequentially formed in the indicated order on a semiconductor substrate and thereafter are annealed for ferroelectric crystallization, thereby preparing the device composed of the semiconductor, insulator, ferroelectric and metal, a method of making a semiconductor ferroelectric memory element in which the film is composed of Ca.Type: GrantFiled: April 21, 2017Date of Patent: June 16, 2020Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, WACOM R&D CORPORATIONInventors: Shigeki Sakai, Mitsue Takahashi, Masaki Kusuhara, Masayuki Toda, Masaru Umeda, Yoshikazu Sasaki
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Publication number: 20190273086Abstract: A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.Type: ApplicationFiled: July 3, 2017Publication date: September 5, 2019Applicants: National Institute of Advanced Industrial Science and Technology, WACOM R&D CorporationInventors: Mitsue TAKAHASHI, Shigeki SAKAI, Masaki KUSUHARA, Masayuki TODA, Masaru UMEDA, Yoshikazu SASAKI
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Publication number: 20180130909Abstract: A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr—Bi—Ta—O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr—Ca—Bi—Ta—O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.Type: ApplicationFiled: August 11, 2017Publication date: May 10, 2018Inventors: Shigeki SAKAI, Mitsue TAKAHASHI, Masaki KUSUHARA, Masayuki TODA, Masaru UMEDA
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Patent number: 9885113Abstract: To obtain a vaporizer in which thin film-forming raw material solutions are stably and reliably carried by a carrier gas while being reliably separated within the dispersion unit body and the plurality of thin film-forming raw material solutions are stably vaporized in the subsequent vaporization unit, a center rod used in the vaporizer, and a method for vaporizing raw materials entrained by a carrier gas. A carrier gas introduction bore is formed in the center axis direction of the dispersion unit body. A center rod is inserted in the carrier gas introduction bore. The interspace between the inner wall of the bore and the outer wall of the rod forms a gas passage. Multiple thin film-forming material supply units are situated midway of the gas passage of the dispersion unit body, supplying thin film-forming materials. The center rod has sealing members in the longitudinal direction of the center rod.Type: GrantFiled: February 27, 2012Date of Patent: February 6, 2018Assignees: KABUSHIKI KAISHA WATANABE SHOKOInventors: Masaru Umeda, Masayuki Toda
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Patent number: 9818869Abstract: A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr—Bi—Ta—O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr—Ca—Bi—Ta—O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.Type: GrantFiled: July 24, 2014Date of Patent: November 14, 2017Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, WACOM R&D CORPORATIONInventors: Shigeki Sakai, Mitsue Takahashi, Masaki Kusuhara, Masayuki Toda, Masaru Umeda
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Publication number: 20170309488Abstract: [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm<dr<150, without impairing the data retention property of not less than 105 seconds and the data rewrite withstand property of not less than 108 times, of those that have hitherto been developed, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts. [Means for Solving] In methods of making a device in which an insulator, a film made of constituent elements of a bismuth layered perovskite crystalline ferroelectric and a metal are sequentially formed in the indicated order on a semiconductor substrate and thereafter are annealed for ferroelectric crystallization, thereby preparing the device composed of the semiconductor, insulator, ferroelectric and metal, a method of making a semiconductor ferroelectric memory element in which the film is composed of Ca.Type: ApplicationFiled: April 21, 2017Publication date: October 26, 2017Inventors: Shigeki SAKAI, Mitsue TAKAHASHI, Masaki KUSUHARA, Masayuki TODA, Masaru UMEDA, Yoshikazu SASAKI
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Patent number: 9644264Abstract: Because an evaporating apparatus for use in an MOCVD film deposition system has a structure in which a plurality of gas passages brings in a gas from the upper direction, the apparatus has a difficulty to position a jet nozzle, and the apparatus is incapable of accurately controlling the pressure and flow rate of a carrier gas mixed with a raw material solution to be issued into an evaporating unit, and it is thus difficult to highly accurately control the composition of MOCVD films. A plurality of gas passages is arranged on a flat, disk-shaped plate. With this configuration, the accurate positioning of the jet nozzle can be made easier, and the composition of MOCVD films can be controlled highly accurately.Type: GrantFiled: June 10, 2013Date of Patent: May 9, 2017Assignees: KABUSHIKI KAISHA WATANABE SHOKOInventors: Masayuki Toda, Masaki Kusuhara, Masaru Umeda, Mitsuru Fukagawa
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Publication number: 20160247932Abstract: A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr—Bi—Ta—O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr—Ca—Bi—Ta—O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.Type: ApplicationFiled: July 24, 2014Publication date: August 25, 2016Inventors: Shigeki SAKAI, Mitsue TAKAHASHI, Masaki KUSUHARA, Masayuki TODA, Masaru UMEDA
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Publication number: 20150284845Abstract: A film forming apparatus, in which vaporized gas of liquid raw material not adequately vaporized in a vaporizer is completely vaporized passing through a pipe for feeding vaporized gas of liquid raw material arranged between the vaporizer and an film forming chamber, and applies in the film forming chamber, is provided. The apparatus includes a supplying system of liquid raw material for film forming; a vaporizer, which vaporizes the liquid raw material by mixing with carrier gas; a film forming chamber, which flows the vaporized gas of liquid raw material from the vaporizer on a base plate, and forms film; and a pipe feeding vaporized gas of liquid raw material, which supplies gas from the vaporizer to the film forming chamber. The pipe for feeding vaporized gas of liquid raw material has a spiral shape, and the axis as the spiral shape is arranged vertical direction to a floor plane.Type: ApplicationFiled: June 5, 2013Publication date: October 8, 2015Applicant: KABUSHIKI KAISHA WATANABE SHOKOInventors: Masayuki Toda, Masaru Umeda
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Patent number: 9108120Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.Type: GrantFiled: October 22, 2014Date of Patent: August 18, 2015Assignees: WACOM R&D CORPORATIONInventors: Masayuki Toda, Masaru Umeda
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Patent number: 9020332Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.Type: GrantFiled: October 22, 2014Date of Patent: April 28, 2015Assignees: Wacom R&D CorporationInventors: Masayuki Toda, Masaru Umeda
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Publication number: 20150069642Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.Type: ApplicationFiled: October 22, 2014Publication date: March 12, 2015Inventors: Masayuki TODA, Masaru UMEDA
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Publication number: 20150053137Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.Type: ApplicationFiled: October 22, 2014Publication date: February 26, 2015Inventors: Masayuki TODA, Masaru UMEDA
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Patent number: 8897627Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.Type: GrantFiled: January 27, 2010Date of Patent: November 25, 2014Assignees: Wacom R&D CorporationInventors: Masayuki Toda, Masaru Umeda
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Publication number: 20140050852Abstract: To obtain a vaporizer in which thin film-forming raw material solutions are stably and reliably carried by a carrier gas while being reliably separated within the dispersion unit body and the plurality of thin film-forming raw material solutions are stably vaporized in the subsequent vaporization unit, a center rod used in the vaporizer, and a method for vaporizing raw materials entrained by a carrier gas. A carrier gas introduction bore is formed in the center axis direction of the dispersion unit body. A center rod is inserted in the carrier gas introduction bore. The interspace between the inner wall of the bore and the outer wall of the rod forms a gas passage. Multiple thin film-forming material supply units are situated midway of the gas passage of the dispersion unit body, supplying thin film-forming materials. The center rod has sealing members in the longitudinal direction of the center rod.Type: ApplicationFiled: February 27, 2012Publication date: February 20, 2014Applicant: KABUSHIKI KAISHA WATANABE SHOKOInventors: Masaru Umeda, Masayuki Toda
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Publication number: 20130291797Abstract: Provided is a vaporizer that can reduce ripples, particles, and a carbon content of a film and can supply a raw material capable of forming a film having a desired composition. Moreover, a vaporizer is obtained that sufficient vaporization can be performed without heating more than necessary and temperature management can be facilitated. A vaporizer includes a vaporizer main body (3) into which a carrier gas having a film forming liquid material dispersed is introduced and a heater main body (4) disposed in the vaporizer main body (3). The shape of the inlet portion of the heater main body is in a cone.Type: ApplicationFiled: December 21, 2011Publication date: November 7, 2013Applicants: KABUSHIKIKAISHA WATANABE SHOKOInventors: Masaki Kusuhara, Masaru Umeda, Mitsuru Fukagawa, Masayuki Toda
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Publication number: 20130273249Abstract: Because an evaporating apparatus for use in an MOCVD film deposition system has a structure in which a plurality of gas passages brings in a gas from the upper direction, the apparatus has a difficulty to position a jet nozzle, and the apparatus is incapable of accurately controlling the pressure and flow rate of a carrier gas mixed with a raw material solution to be issued into an evaporating unit, and it is thus difficult to highly accurately control the composition of MOCVD films. A plurality of gas passages is arranged on a flat, disk-shaped plate. With this configuration, the accurate positioning of the jet nozzle can be made easier, and the composition of MOCVD films can be controlled highly accurately.Type: ApplicationFiled: June 10, 2013Publication date: October 17, 2013Inventors: Masayuki TODA, Masaki KUSUHARA, Masaru UMEDA, Mitsuru FUKAGAWA