Abstract: A secondary subcircuit of a converter circuit is disclosed where a method and circuit for operating a transistor to prevent reverse conduction of the current in the secondary subcircuit is disclosed. The diode in the secondary subcircuits of the prior art is replaced by a transistor and the circuitry for controlling the transistor is made part of the control circuit (ASIC). The secondary converter subcircuit includes a secondary coil for generating a voltage that passes through a first transistor M1, a capacitor, and a second transistor M2, where the output terminal of the subcircuit is across said capacitor. A presently preferred embodiment of a control circuit detects the voltage level at a sync node and the output voltage level at the output terminal and controls transistors M1 and M2 accordingly in generating the desired voltage level at the output terminal.

Abstract: A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which comprises a semiconductor substrate including a first semiconductor layer of one conductivity type and a second semiconductor layer of one conductivity type provided on the first semiconductor layer, a third semiconductor layer of an opposite conductivity type having a depth D and formed in the second semiconductor layer to provide a pn junction therebetween, the third semiconductor layer defining a plurality of exposed regions of the second semiconductor layer, each of the plurality of exposed regions of the second semiconductor layer having a width W, a relation between the depth D and the width W being given by D.gtoreq.0.5W, and a metal electrode provided on the substrate surface.

Abstract: A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which includes a semiconductor substrate having an N.sup.+ -type semiconductor layer and an N-type semiconductor layer, a P.sup.+ -type semiconductor layer formed in the N-type semiconductor layer to provide a PN junction therebetween, the P.sup.+ -type semiconductor layer defining exposed regions of the N-type semiconductor layer, and a metal layer provided on an entire surface of the semiconductor substrate having the P.sup.+ -type semiconductor layer to provide contact surfaces of Schottky barrier between the metal layer and each of the exposed regions of the N-type semiconductor layer. In the structure, a configuration of the PN junction is provided to satisfy conditions given by 0.degree.<.theta..ltoreq.135.degree. and 3Wbi.ltoreq.W.ltoreq.2W.sub.B where .theta.

Abstract: An electrophotographic photoreceptor comprises a photoconductive layer having a protective layer disposed thereon, said protective layer being formed by dehydrocondensation of the hydrolyzate of a perfluoroalkyl silane coupling agent, or the hydrolyzate of a mixture of a perfluoroalkyl silane coupling agent and a silane coupling agent. The photoreceptor is very useful in that it can exhibit a high performance even in an environment at a higher temperature and at a higher humidity and that it has a high resistance to the abrasion with a great number of sheets being printed and with the cleaning members and that it is capable of preserving a high resolution without any image blurring.