Patents by Inventor Masaru Yuyama

Masaru Yuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7226505
    Abstract: A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprises subjecting single crystal silicon which is prepared by the CZ method and is not subjected to an oxidation treatment (a bare wafer) to an ultra high temperature heat treatment in an oxygen atmosphere and at a temperature of higher than 1200° C. and lower than 1310° C. The method allows the elimination of void defects present in single crystal silicon with reliability.
    Type: Grant
    Filed: December 25, 2002
    Date of Patent: June 5, 2007
    Assignee: Sumco Techxiv Corporation
    Inventors: Masahiko Ando, Masaru Yuyama, Shiro Yoshino
  • Publication number: 20050081778
    Abstract: A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprises subjecting single crystal silicon which is prepared by the CZ method and is not subjected to an oxidation treatment (a bare wafer) to an ultra high temperature heat treatment in an oxygen atmosphere and at a temperature of higher than 1200° C. and lower than 1310° C. The method allows the elimination of void defects present in single crystal silicon with reliability.
    Type: Application
    Filed: December 25, 2002
    Publication date: April 21, 2005
    Inventors: Masahiko Ando, Masaru Yuyama, Shiro Yoshino