Abstract: A controller of a thrust generating device executes one of first control of controlling thrust by changing the pitch angle of each blade while maintaining the rotational speed of a propeller at a reference value, or second control of allowing the thrust greater than the thrust generated in the first control to be generated by making the rotational speed of the propeller larger than the reference value.

Abstract: A semiconductor device component includes a first portion having a first hole usable as a nut insertion hole, and a second portion having a second hole adjacent to the first hole with a wall interposed therebetween. The first hole includes a first surface facing the wall, a second surface adjacent to the first surface, a third surface adjacent to the second surface, a fourth surface adjacent to the third surface and facing the first surface, a fifth surface adjacent to the fourth surface and facing the second surface, and a sixth surface adjacent to the fifth surface and the first surface and facing the third surface. A distance between the first and fourth surfaces is greater than a distance between the second and fifth surfaces, and greater than a distance between the third and sixth surfaces.

Abstract: A semiconductor device component includes a first portion having a first hole usable as a nut insertion hole, and a second portion having a second hole adjacent to the first hole with a wall interposed therebetween. The first hole includes a first surface facing the wall, a second surface adjacent to the first surface, a third surface adjacent to the second surface, a fourth surface adjacent to the third surface and facing the first surface, a fifth surface adjacent to the fourth surface and facing the second surface, and a sixth surface adjacent to the fifth surface and the first surface and facing the third surface. A distance between the first and fourth surfaces is greater than a distance between the second and fifth surfaces, and greater than a distance between the third and sixth surfaces.

Abstract: An epitaxial wafer manufacturing apparatus including: a chamber; a gas introduction port provided in the chamber and configured to introduce a reaction gas into the chamber; a gas exhaust port provided in the chamber and configured to exhaust the reaction gas from inside the chamber; a rotating unit provided inside the chamber; a wafer holder provided in an upper portion of the rotating unit and configured to hold a wafer; and an annular flow-regulating wall being spaced from the rotating unit and the wafer holder, the annular flow-regulating surrounding the upper portion of the rotating unit and a upper portion of the wafer holder, and the annular flow-regulating expanding downward. The flow-regulating wall has an upper end being located above the wafer holder. The upper end has a smaller inner diameter than an outer periphery of the wafer holder. The flow-regulating wall has a lower end being located below an upper surface of the rotating unit.

Abstract: A liquid crystal display panel includes: a pair of substrates; a cylindrical spacer configured to hold a gap between the pair of substrates, and a liquid crystal which fills the gap. The cylindrical spacer includes a first support portion having a first support surface and a second support portion having a second support surface. The first support portion is provided inside the second support surface so that the first support surface is projected from the second support surface. The second support portion is provided on a major surface of one of the substrates the second support surface from the major surface.

Abstract: A semiconductor package includes a radiator plate including a stress alleviation section, a resin sheet arranged on the radiator plate, a pair of bus bars joined to the radiator plate through the resin sheet at positions at which the stress alleviation section is interposed between the bus bars, and a semiconductor device joined to the pair of bus bars by being sandwiched between the bus bars, and energized from outside through the pair of bus bars.

Abstract: An epitaxial wafer manufacturing apparatus including: a chamber; a gas introduction port provided in the chamber and configured to introduce a reaction gas into the chamber; a gas exhaust port provided in the chamber and configured to exhaust the reaction gas from inside the chamber; a rotating unit provided inside the chamber; a wafer holder provided in an upper portion of the rotating unit and configured to hold a wafer; and an annular flow-regulating wall being spaced from the rotating unit and the wafer holder, the annular flow-regulating surrounding the upper portion of the rotating unit and a upper portion of the wafer holder, and the annular flow-regulating expanding downward. The flow-regulating wall has an upper end being located above the wafer holder. The upper end has a smaller inner diameter than an outer periphery of the wafer holder. The flow-regulating wall has a lower end being located below an upper surface of the rotating unit.

Abstract: A liquid crystal display panel includes: a pair of substrates; a cylindrical spacer configured to hold a gap between the pair of substrates, and a liquid crystal which fills the gap. The cylindrical spacer includes a first support portion having a first support surface and a second support portion having a second support surface. The first support portion is provided inside the second support surface so that the first support surface is projected from the second support surface. The second support portion is provided on a major surface of one of the substrates the second support surface from the major surface.