Abstract: A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for.

Abstract: A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.

Abstract: A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.

Abstract: A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for.

Abstract: A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.