Patents by Inventor Masashi Bando
Masashi Bando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11903226Abstract: A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.Type: GrantFiled: January 19, 2023Date of Patent: February 13, 2024Assignee: SONY GROUP CORPORATIONInventors: Masashi Bando, Michinori Shiomi
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Publication number: 20240030245Abstract: A solid-state imaging element according to an aspect of the present disclosure includes: a first photoelectric conversion unit (31) having a light incident surface on which light is incident; a first gate electrode (36) provided in the first photoelectric conversion unit (31) via an insulating film (35); a second photoelectric conversion unit (32) provided on a side of the light incident surface with respect to the first photoelectric conversion unit (31); and a voltage application unit that applies a voltage corresponding to the number of charges accumulated by the second photoelectric conversion unit (32) to the first gate electrode (36).Type: ApplicationFiled: November 25, 2021Publication date: January 25, 2024Inventor: MASASHI BANDO
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Publication number: 20240023352Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.Type: ApplicationFiled: August 23, 2023Publication date: January 18, 2024Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yosuke SAITO, Masashi BANDO, Yukio KANEDA, Yoshiyuki HIRANO, Toshiki MORIWAKI
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Patent number: 11825666Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.Type: GrantFiled: July 30, 2019Date of Patent: November 21, 2023Assignees: Sony Corporation, Sony Semiconductor Solutions CorporationInventors: Yosuke Saito, Masashi Bando, Yukio Kaneda, Yoshiyuki Hirano, Toshiki Moriwaki
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Publication number: 20230354627Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.Type: ApplicationFiled: July 5, 2023Publication date: November 2, 2023Applicant: SONY GROUP CORPORATIONInventors: Yasuharu UJIIE, Masakazu MUROYAMA, Masashi BANDO, Masaki MURATA, Hideyuki KUMITA, Sachiko SAKAIGAWA, Shintarou HIRATA, Yuya KUMAGAI, Yu KATO
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Publication number: 20230329017Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and- an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.Type: ApplicationFiled: May 3, 2023Publication date: October 12, 2023Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yohei HIROSE, Iwao YAGI, Shintarou HIRATA, Hideaki MOGI, Masashi BANDO, Osamu ENOKI
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Patent number: 11778841Abstract: To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element (100) including at least a first electrode (101), a work function control layer (108), a photoelectric conversion layer (102), an oxide semiconductor layer (104), and a second electrode (107) in this order, and further including a third electrode (105), in which the third electrode (105) is provided apart from the second electrode (107) and is provided facing the photoelectric conversion layer (102) via an insulating layer (106), and the work function control layer (108) contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.Type: GrantFiled: July 30, 2019Date of Patent: October 3, 2023Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shintarou Hirata, Masahiro Joei, Kenichi Murata, Masashi Bando, Yosuke Saito, Ryosuke Suzuki
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Publication number: 20230262998Abstract: There is provided an imaging device and an electronic apparatus including an imaging device, where the imaging device includes: a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material, where the second organic semiconductor material comprises a subphthalocyanine material, and where the second organic semiconductor material has a highest occupied molecular orbital level ranging from ?6 eV to ?6.7 eV.Type: ApplicationFiled: February 7, 2023Publication date: August 17, 2023Applicant: Sony Group CorporationInventors: Yuta HASEGAWA, Masashi BANDO, Shintarou HIRATA, Hideaki MOGI, Iwao YAGI, Yasuharu UJIIE, Yuki NEGISHI
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Patent number: 11730004Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.Type: GrantFiled: September 17, 2021Date of Patent: August 15, 2023Assignees: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yohei Hirose, Iwao Yagi, Shintarou Hirata, Hideaki Mogi, Masashi Bando, Osamu Enoki
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Publication number: 20230234588Abstract: A vehicle for activating launch control in response to establishment of a predetermined activation condition includes an electric power conversion device configured to control electric power supplied to an electric motor, the electric motor configured to drive a driven wheel according to electric power supplied via the electric power conversion device, a temperature control circuit in which a temperature control medium circulates to control a temperature of the electric power conversion device, and a control device. The temperature control circuit includes a pump configured to pump the temperature control medium. The control device is configured to control the pump, and when the activation condition is established, the control device is configured to control the pump such that a flow rate of the pump is high as compared with a case where the activation condition is not established.Type: ApplicationFiled: January 25, 2023Publication date: July 27, 2023Applicant: HONDA MOTOR CO., LTD.Inventors: Masashi BANDO, Takahiro KOZEKI
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Publication number: 20230215889Abstract: An imaging element is disclosed that includes: a semiconductor substrate; a multilayer wiring layer; a plurality of structures; and a light reflecting layer. The semiconductor substrate has a first surface as a light incidence surface and a second surface opposite to the first surface. A light receiving section of the semiconductor substrate generates electric charge through photoelectric conversion. The multilayer wiring layer has a plurality of wiring layers and is on the second surface side of the semiconductor substrate. The plurality of structures is in the multilayer wiring layer. The light reflecting layer is in the multilayer wiring layer, and forms a reflective region or a non-reflective region in a region with the interlayer insulating layer interposed in between. The region has none of the structures formed therein. The reflective region and the non-reflective region are substantially symmetrical with respect to the optical center of the pixel.Type: ApplicationFiled: April 7, 2021Publication date: July 6, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Ryoto YOSHITA, Yoshimichi KUMAGAI, Naoyuki OSAWA, Kengo NAGATA, Masashi BANDO
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Publication number: 20230092968Abstract: A vehicle temperature control system includes: a first temperature control circuit; a second temperature control circuit; a heat exchanger in which heat exchange between a first temperature control medium and a second temperature control medium is performed; and a control device. The control device is capable of controlling a carrier frequency and a flow rate control valve of the second temperature control circuit based on the temperature of the first temperature control medium detected. In a case where the temperature of the first temperature control medium is lower than a predetermined value, the control device is configured to set the carrier frequency to be lower and controls the flow rate control valve such that the flow rate to a second branch flow path is smaller, as compared with a case where the temperature of the first temperature control medium is equal to or higher than the predetermined value.Type: ApplicationFiled: August 30, 2022Publication date: March 23, 2023Applicant: HONDA MOTOR CO., LTD.Inventors: Takuya HONJO, Masashi BANDO
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Patent number: 11581370Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.Type: GrantFiled: January 17, 2019Date of Patent: February 14, 2023Assignee: SONY CORPORATIONInventors: Masashi Bando, Michinori Shiomi
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Publication number: 20220367573Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).Type: ApplicationFiled: June 16, 2022Publication date: November 17, 2022Applicant: SONY GROUP CORPORATIONInventors: Masaki MURATA, Hideaki MOGI, Shintarou HIRATA, Iwao YAGI, Yasuharu UJIIE, Masashi BANDO, Raku SHIRASAWA, Hajime KOBAYASHI, Mitsunori NAKAMOTO, Yuichi TOKITA
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Patent number: 11430833Abstract: An imaging element includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, a first semiconductor material layer 23B1 and a second semiconductor material layer 23B2 are formed from the first electrode side, and the second semiconductor material layer 23B2 is in contact with the photoelectric conversion layer 23A. The photoelectric conversion unit further includes an insulating layer 82 and a charge accumulation electrode 24 disposed apart from the first electrode 21 so as to face the first semiconductor material layer 23B1 via the insulating layer 82. When the carrier mobility of the first semiconductor material layer 23B1 is represented by ?1, and the carrier mobility of the second semiconductor material layer 23B2 is represented by ?2, ?2<?1 is satisfied.Type: GrantFiled: May 18, 2018Date of Patent: August 30, 2022Assignee: SONY CORPORATIONInventors: Masashi Bando, Yosuke Saito
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Patent number: 11411051Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).Type: GrantFiled: December 12, 2019Date of Patent: August 9, 2022Assignee: SONY CORPORATIONInventors: Masaki Murata, Hideaki Mogi, Shintarou Hirata, Iwao Yagi, Yasuharu Ujiie, Masashi Bando, Raku Shirasawa, Hajime Kobayashi, Mitsunori Nakamoto, Yuichi Tokita
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Patent number: 11401965Abstract: A first and second electric members respectively having electrical connection portions are electrically connected in a state that mutual positions are regulated by guide pins, and fastening screws which are inserted through fastening screw insertion holes of the second electric member are screwed into screw holes for fastening of the first electric member, and thereby the first and second electric members are fastened. At least one of the screw holes for fastening has large-diameter portions into which the guide pin is detachably inserted, and small-diameter portions equipped with female screw portions. The female screw portions are not arranged in the large-diameter portions, and inner diameters of the large-diameter portions are larger than root diameters of the female screw portions, and outer circumferential surfaces of the fastening screws which are screwed with the female screw portions and inner circumferential surfaces of the large-diameter portions are not in contact with each other.Type: GrantFiled: December 25, 2019Date of Patent: August 2, 2022Assignee: Honda Motor Co., Ltd.Inventors: Takeshi Otani, Yusuke Yamamura, Hiroshi Kunii, Masashi Bando
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Publication number: 20220103775Abstract: An imaging device including: an imaging unit in which a plurality of shared sections each including two pixel regions adjacent at least in a first direction is provided and the shared sections provided at closest positions in a second direction are disposed to shift in the first direction by the one pixel region; a photoelectric converter provided for each of the pixel regions; an electric charge holding unit that holds signal charge generated by the photoelectric converter; an electric charge voltage converter to which the signal charge is transferred from the electric charge holding unit; and a pixel transistor that is electrically coupled to the electric charge voltage converter. The second direction intersects the first direction. The pixel transistor is provided for each of the shared sections.Type: ApplicationFiled: January 8, 2020Publication date: March 31, 2022Inventors: YOSHIMICHI KUMAGAI, TAKASHI ABE, RYOTO YOSHITA, MASASHI BANDO, NAOYUKI OSAWA
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Publication number: 20220013584Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.Type: ApplicationFiled: September 17, 2021Publication date: January 13, 2022Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yohei Hirose, Iwao Yagi, Shintarou Hirata, Hideaki Mogi, Masashi Bando, Osamu Enoki
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Publication number: 20220005872Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and—an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.Type: ApplicationFiled: September 17, 2021Publication date: January 6, 2022Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yohei HIROSE, Iwao YAGI, Shintarou HIRATA, Hideaki MOGI, Masashi BANDO, Osamu ENOKI