Abstract: In a gate drive circuit of which an N-channel MOSFET and a P-channel MOSFET are connected in a push-pull manner to amplify an input pulse signal and drive an output element, a temperature correction circuit is connected between gate terminals of the N-channel MOSFET and the P-channel MOSFET. The temperature correction circuit lowers each of gate voltages of the N-channel MOSFET and the P-channel MOSFET as ambient temperature rises.

Abstract: An object is to provide a power semiconductor module having a small ON-resistance and capable of operating at a high frequency. Included are: a semiconductor chip 2 configured to supply a power source, and including a voltage-driven switching element, and a gate electrode 20G provided on a main surface of the semiconductor chip 2; a heat dissipation sheet 3 disposed opposite the main surface of the semiconductor chip 2, and configured to dissipate heat of the semiconductor chip 2; a wiring board 4 disposed between the semiconductor chip 2 and the heat dissipation sheet 3, and including a gate wiring pattern 40G connected to an external terminal 6G; an interposer 5 including a sheet-like base material disposed between the semiconductor chip 2 and the wiring board 4, and a gate resistor 50G in the sheet-like base material and interposed between the gate electrode 20G and the gate wiring pattern 40G; and a resin housing 7 that seals the semiconductor chip 2, the wiring board 4, and the interposer 5.

Abstract: A power supply circuit for measuring transient thermal resistances includes an inverter circuit provided on a primary side of a transformer and controlled by a PWM signal, a rectifier circuit provided on a secondary side of the transformer and including a DC reactor, and a control circuit controlling the PWM signal so as to output a pulsed output current from the rectifier circuit to a semiconductor device to be measured. The control circuit sets a first PWM frequency at rising timing of the output current, and sets a second PWM frequency when a predetermined time t1 elapses from the rising timing of the output current. The control circuit sets the first PWM frequency higher than the second PWM frequency.

Abstract: In a gate drive circuit of which an N-channel MOSFET and a P-channel MOSFET are connected in a push-pull manner to amplify an input pulse signal and drive an output element, a temperature correction circuit is connected between gate terminals of the N-channel MOSFET and the P-channel MOSFET. The temperature correction. circuit lowers each of gate voltages of the N-channel MOSFET and the P-channel MOSFET as ambient temperature rises.

Abstract: A power supply circuit for measuring transient thermal resistances includes an inverter circuit provided on a primary side of a transformer and controlled by a PWM signal, a rectifier circuit provided on a secondary side of the transformer and including a DC reactor, and a control circuit controlling the PWM signal so as to output a pulsed output current from the rectifier circuit to a semiconductor device to be measured. The control circuit sets a first PWM frequency at rising timing of the output current, and sets a second PWM frequency when a predetermined time t1 elapses from the rising timing of the output current. The control circuit sets the first PWM frequency higher than the second PWM frequency.