Patents by Inventor Masashi Futamura

Masashi Futamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method
    Patent number: 8841215
    Abstract: Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for Ga?In(1-?)As?P(1-?) (0???1; 0???1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a Ga?In(1-?)As?P(1-?) (0???1; 0???1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: September 23, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiji Ishibashi, Masashi Futamura, Takayuki Nishiura
  • Polishing Agent, Compound Semiconductor Manufacturing Method, and Semiconductor Device Manufacturing Method
    Publication number: 20120164833
    Abstract: Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for Ga?In(1-?)As?P(1-?) (0???1; 0???1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a Ga?In(1-?)As?P(1-?) (0???1; 0???1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent.
    Type: Application
    Filed: March 9, 2012
    Publication date: June 28, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Keiji Ishibashi, Masashi Futamura, Takayuki Nishiura