Abstract: The invention relates to a combination use of a WT1 antigen peptide or a pharmaceutically acceptable salt thereof and an immunomodulator for treating or preventing cancer.

Abstract: It is provided a bonded substrate of a support substrate and group-13 nitride crystal substrate. The group-13 nitride crystal substrate comprises one or more transition metal elements selected from the group consisting of zinc, iron, manganese, nickel and chromium in a concentration of 1×1017 atoms·cm?3 or higher and 1×1021 atoms·cm?3 or lower.

Abstract: A bonded body includes a supporting substrate composed of a metal oxide, a piezoelectric material substrate, a bonding layer provided between the supporting substrate and piezoelectric material substrate and having a composition of Si(1-x)Ox (0.008?x?0.408), and an amorphous layer provided between the bonding layer and supporting substrate. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the supporting substrate.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of Si(1-y)Oy (0.008?y?0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.

Abstract: A compound represented by the formula (1): wherein Xa and Ya are each a single bond and the like, cancer antigen peptide A is an MHC class I-restricted WT1 peptide consisting of 7-30 amino acid residues, R1 is a hydrogen atom, a group represented by the formula (2): wherein Xb and Yb are each a single bond and the like, cancer antigen peptide B has a sequence different from that of the cancer antigen peptide A, and is an MHC class I-restricted WT1 peptide consisting of 7-30 amino acid residues, or cancer antigen peptide C, and cancer antigen peptide C has a sequence different from that of the cancer antigen peptide A, and is an MHC class I-restricted WT1 peptide or an MHC class II-restricted WT1 peptide, consisting of 7-30 amino acid residues containing one cysteine residue, or a salt thereof, and the like.

Abstract: The present disclosure includes a pharmaceutical composition for treating a cancer in an HLA-A*02:07, HLA-A*03:01, HLA-B*15:01, or HLA-B*27:05-positive subject comprising a WT1-derived cancer antigen peptide or a peptide conjugate containing the peptide.

Abstract: A bonded body having a supporting substrate and piezoelectric material layer is provided. The supporting substrate is composed of mullite, and the material of the piezoelectric material layer is LiAO3 where A represents one or more element selected from the group consisting of niobium and tantalum. An interface layer is present along an interface between the supporting body and piezoelectric material layer, and a supporting substrate-side intermediate layer is present between the interface layer and supporting substrate. Each of the interface layer and supporting substrate-side intermediate layer contains oxygen, aluminum, silicon and one or more element selected from the group consisting of niobium and tantalum as main components.

Abstract: A piezoelectric monocrystalline substrate is composed of a material represented by LiAO3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of ExO(1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29?x?0.89).

Abstract: A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.

Abstract: A bonded body includes a supporting substrate composed of a polycrystalline ceramic material or monocrystalline material, a piezoelectric single crystal substrate and a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate. The bonding layer has a composition of Si(1-x)Ox (x represents an oxygen ratio). The oxygen ratio is increased or decreased from an end part of the bonding layer on the side of the piezoelectric single crystal substrate to an end part of the bonding layer on the side of the supporting substrate. The maximum value of the oxygen ratio x in the bonding layer is 0.013 or higher and 0.666 or lower, and the minimum value of the oxygen ratio is 0.001 or higher and 0.408 or lower.

Abstract: The present invention relates to a compound useful as a vaccine adjuvant for cancer vaccine, a preparation process thereof, a pharmaceutical composition comprising the compound, and use of the compound as a vaccine adjuvant for cancer vaccine.

Abstract: Disclosed is a method for selecting a potential subject with benefiting from a pharmaceutical composition for treating or preventing cancer, comprising: determining the presence or absence of a mutation in tumor protein p53 (TP53) gene and/or BCL6 co-repressor (BCOR) gene by using a sample collected from the subject; and providing an indication that the subject is a potential subject with benefiting from the pharmaceutical composition in the case of TP53 wild type and/or BCOR wild type.

Abstract: A base substrate includes a supporting substrate and a base crystal layer provided on a main face of the supporting substrate composed of a crystal of a group 13 nitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the group 13 nitride, metal of a group 13 element and/or void is present between the raised part and supporting substrate.

Abstract: A bonded body includes a piezoelectric single crystal substrate; a supporting substrate composed of a polycrystalline ceramic material or a single crystal material; a bonding layer provided on the piezoelectric single crystal substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); and an amorphous layer provided between the supporting substrate and bonding layer, the amorphous layer containing oxygen atoms and argon atoms. A concentration of the oxygen atoms at a central part of the amorphous layer is higher than a concentration of the oxygen atoms at a peripheral part of the amorphous layer.

Abstract: A bonded body includes: a piezoelectric single crystal substrate; a supporting substrate composed of a single crystal silicon; a bonding layer—provided between the supporting substrate and piezoelectric single crystal substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); and an amorphous layer provided between the supporting substrate and bonding layer and containing silicon atoms, oxygen atoms, and argon atoms. The concentration of the oxygen atoms in an end part of the amorphous layer on a side of the bonding layer is higher than the average concentration of the oxygen atoms in the bonding layer.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of Si(1-y)Oy (0.008?y?0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.

Abstract: A bonded body includes a supporting substrate composed of a metal oxide, a piezoelectric material substrate, a bonding layer provided between the supporting substrate and piezoelectric material substrate and having a composition of Si(1-x)Ox (0.008?x?0.408), and an amorphous layer provided between the bonding layer and supporting substrate. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the supporting substrate.

Abstract: A bonded body includes a supporting substrate, a piezoelectric single crystal substrate and a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate. The bonding layer has a composition of Si(1-x)Ox (x represents an oxygen ratio). The oxygen ratio x at a central part in a thickness direction of the bonding layer is higher than an oxygen ratio x at an end part of the bonding layer on a side of the piezoelectric single crystal substrate and an oxygen ratio x at an end part of the bonding layer on a side of the supporting substrate. The oxygen ratio at the central part in the thickness direction of the bonding layer is 0.013 or higher and 0.666 or lower.

Abstract: A bonded body includes a piezoelectric single crystal substrate; a supporting substrate composed of a polycrystalline ceramic material or a single crystal material; a bonding layer provided on the piezoelectric single crystal substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); and an amorphous layer provided between the supporting substrate and bonding layer, the amorphous layer containing oxygen atoms and argon atoms. A concentration of the oxygen atoms at a central part of the amorphous layer is higher than a concentration of the oxygen atoms at a peripheral part of the amorphous layer.

Abstract: A bonded body includes: a piezoelectric single crystal substrate; a supporting substrate composed of a single crystal silicon; a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); and an amorphous layer provided between the supporting substrate and bonding layer and containing silicon atoms, oxygen atoms and argon atoms. The concentration of the oxygen atoms in an end part of the amorphous layer on a side of the bonding layer is higher than the average concentration of the oxygen atoms in the bonding layer.