Abstract: A solar cell has high photoelectric conversion efficiency and comprises a semiconductor substrate, and a first semiconductor layer having first conductivity and a second semiconductor layer having second conductivity that are each layered on the semiconductor substrate. The material volume Vmp at 10% of the load area of at least a first main surface of the semiconductor substrate is 0.003 ?m3/?m2 to 0.010 ?m3/?m2.

Abstract: A method for manufacturing a stacked photoelectric conversion device includes forming an intermediate transparent conductive layer on a light-receiving surface of a crystalline silicon-based photoelectric conversion unit including a crystalline silicon substrate, and forming a thin-film photoelectric conversion unit on the intermediate transparent conductive layer. The stacked photoelectric conversion device includes the crystalline silicon-based photoelectric conversion unit, the intermediate transparent conductive layer, and the thin-film photoelectric conversion unit. The light-receiving surface of the crystalline silicon-based photoelectric conversion unit has a textured surface including a plurality of projections and recesses. The textured surface has an average height of 0.5 ?m or more. The intermediate transparent conductive layer fills the recesses of the textured surface and covers the tops of the projections of the textured surface.

Abstract: A tandem-type photoelectric conversion device includes, arranged in the following order from a light-incident side: a first photoelectric conversion unit; an anti-reflection layer; a transparent conductive layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula R1NH3M1X3 or HC(NH2)2M1X3, wherein R1 is an alkyl group, M1 is a divalent metal ion, and X is a halogen. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. The anti-reflection layer and the transparent conductive layer are in contact with each other, and a refractive index of the anti-reflection layer is lower than a refractive index of the transparent conductive layer.

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

Abstract: A method for manufacturing a stacked photoelectric conversion device includes forming an intermediate transparent conductive layer on a light-receiving surface of a crystalline silicon-based photoelectric conversion unit including a crystalline silicon substrate, and forming a thin-film photoelectric conversion unit on the intermediate transparent conductive layer. The stacked photoelectric conversion device includes the crystalline silicon-based photoelectric conversion unit, the intermediate transparent conductive layer, and the thin-film photoelectric conversion unit. The light-receiving surface of the crystalline silicon-based photoelectric conversion unit has a textured surface including a plurality of projections and recesses. The textured surface has an average height of 0.5 ?m or more. The intermediate transparent conductive layer fills the recesses of the textured surface and covers the tops of the projections of the textured surface.

Abstract: A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

Abstract: A solar cell includes a metal layer and a chalcopyrite compound semiconductor layer in this order on a polyimide film. A manufacturing method according to the present invention includes the following steps in the order: cast applying a polyimide precursor solution onto a support base containing an alkali metal; imidizing the polyimide precursor by heating to form a stacked body including a polyimide film on the support base; forming a metal layer on the polyimide film of the stacked body; and forming a chalcopyrite compound semiconductor layer on the metal layer.

Abstract: A tandem-type photoelectric conversion device includes, arranged in the following order from a light-incident side: a first photoelectric conversion unit; an anti-reflection layer; a transparent conductive layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula R1NH3M1X3 or HC(NH2)2M1X3, wherein R1 is an alkyl group, M1 is a divalent metal ion, and X is a halogen. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. The anti-reflection layer and the transparent conductive layer are in contact with each other, and a refractive index of the anti-reflection layer is lower than a refractive index of the transparent conductive layer.

Abstract: A photoelectric conversion device includes, arranged in the following order from a light-receiving side: a transparent electroconductive layer; a first photoelectric conversion unit that is a perovskite-type photoelectric conversion unit; and a second photoelectric conversion unit. The first photoelectric conversion unit includes, arranged in the following order from the light-receiving side: a hole transporting layer; a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula RNH3MX3 or HC(NH2)2MX3; and an electron transporting layer. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. A product of a resistivity ? and a thickness t of the hole transporting layer satisfies ?t?0.1 ?Q·m2. The transparent electroconductive layer is in contact with the hole transporting layer.

Abstract: A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.

Abstract: A magnetic field generator disposed on one surface side of a sheet-shaped object-to-be-detected contains a magnetic component. The magnetic field generator includes a first magnetic pole part that forms a first magnetic pole, and a second magnetic pole part that forms a second magnetic pole with reverse polarity of the first magnetic pole. The magnetic field generator generates a cross magnetic field that crosses the object-to-be-detected. An MR element is disposed between the first magnetic pole part and the object-to-be-detected. The resistance value of the MR element changes according to a change in a component of the cross magnetic field in a conveying direction. The position of the MR element in the conveying direction is position shifted along the conveying direction from the center position of the first magnetic pole part in the conveying direction, and located between both ends of the first magnetic pole part in the conveying direction.

Abstract: A solar cell includes a metal layer and a chalcopyrite compound semiconductor layer in this order on a polyimide film. A manufacturing method according to the present invention includes the following steps in the order: cast applying a polyimide precursor solution onto a support base containing an alkali metal; imidizing the polyimide precursor by heating to form a stacked body including a polyimide film on the support base; forming a metal layer on the polyimide film of the stacked body; and forming a chalcopyrite compound semiconductor layer on the metal layer.

Abstract: A solar cell of the invention includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section. On the first principal surface of the photoelectric conversion section, an insulating layer is provided in a first electroconductive layer-non-formed region where the first electroconductive layer is not formed. The insulating layer includes a first insulating layer is in contact with the first electroconductive layer on the first principal surface of the photoelectric conversion section, and a second insulating layer that is formed so as to cover at least a part of the first insulating layer.

Abstract: A magnet is disposed on one side of a conveyance plane in which a sheet-like medium to be read is conveyed and generates a magnetic field in a direction perpendicular to the conveyance plane. A magnetoresistive effect element is disposed between the magnet and the conveyance plane, and detects an intensity variation in a conveyance direction component of the magnetic field in a magnetic reading area. An imaging optical system and a light receiver are disposed on the side opposite to the magnet side with respect to the conveyance plane. The imaging optical system forms an image of an optical reading area on the light receiver, the optical reading area including at least a portion in the conveyance direction of the magnetic reading area of the conveyance plane.

Abstract: A solar cell of the invention includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section. On the first principal surface of the photoelectric conversion section, an insulating layer is provided in a first electroconductive layer-non-formed region where the first electroconductive layer is not formed. The insulating layer includes a first insulating layer is in contact with the first electroconductive layer on the first principal surface of the photoelectric conversion section, and a second insulating layer that is formed so as to cover at least a part of the first insulating layer.

Abstract: A magnetic field generator disposed on one surface side of a sheet-shaped object-to-be-detected contains a magnetic component. The magnetic field generator includes a first magnetic pole part that forms a first magnetic pole, and a second magnetic pole part that forms a second magnetic pole with reverse polarity of the first magnetic pole. The magnetic field generator generates a cross magnetic field that crosses the object-to-be-detected. An MR element is disposed between the first magnetic pole part and the object-to-be-detected. The resistance value of the MR element changes according to a change in a component of the cross magnetic field in a conveying direction. The position of the MR element in the conveying direction is position shifted along the conveying direction from the center position of the first magnetic pole part in the conveying direction, and located between both ends of the first magnetic pole part in the conveying direction.

Abstract: A magnet is disposed on one side of a conveyance plane in which a sheet-like medium to be read is conveyed and generates a magnetic field in a direction perpendicular to the conveyance plane. A magnetoresistive effect element is disposed between the magnet and the conveyance plane, and detects an intensity variation in a conveyance direction component of the magnetic field in a magnetic reading area. An imaging optical system and a light receiver are disposed on the side opposite to the magnet side with respect to the conveyance plane. The imaging optical system forms an image of an optical reading area on the light receiver, the optical reading area including at least a portion in the conveyance direction of the magnetic reading area of the conveyance plane.

Abstract: A system is provided that enables communications between a driver of a vehicle and a person outside the vehicle, between a rider of a motorcycle and a fellow rider of the same vehicle, or between a driver of a vehicle and another driver of another vehicle. A Bluetooth communication system comprises a Bluetooth communication device mountable to a helmet, and an indicator unit having an indicator disposed in a viewing range of a driver of such a vehicle as a car or a boat. It further comprises a transmitting module disposed in the Bluetooth communication device for transmitting an indication signal to the indicator in response to reception of a calling signal and a receiving module disposed in the indicator unit for driving the indicator in response to reception of the indication signal. The indicator indicates when a call arrives at a Bluetooth communication device mounted on a helmet.

Abstract: An electronic volume device of an invention includes a common volume I/O 371 for receiving an i-th common volume level Dcom[i] (i=1 to N) on a common scale of N steps, a volume converter 373 for converting the Dcom[i] into a j-th unique volume level Dvol[j] on a unique scale of n steps; and a volume controller 372 for controlling an electronic volume based on the unique volume. The volume converter 373 includes a volume memory for storing an offset between the Dcom[i] and the Dvol [j] and a volume controller that controls at least one of the Dvol[j] and the offset such that the received Dcom agrees with the sum of the Dvol[j] and the offset and controls the Dvol[j] on a higher priority than the offset.