Patents by Inventor Masashi Hongoh

Masashi Hongoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming charge transfer complexes
    Patent number: 5238526
    Abstract: A charge transfer complex of donor and acceptor molecules is formed through a vapor phase reaction. After the formation, the complex is subjected to thermal annealing in order to optimize the proportion of the donor and the acceptor. By this method, the formation speed is significantly increased.
    Type: Grant
    Filed: September 21, 1990
    Date of Patent: August 24, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Masashi Hongoh
  • Thin superconducting film and manufacturing method for the same
    Patent number: 5094880
    Abstract: A superconducting film is formed by a physical vapor deposition. In order to form such a superconducting film as exhibits a sufficient superconductivity a small portion of a target is sublimed without decomposing molecules of the target and deposited on a surface of a substrate. In addition an undesirable component is not introduced from the target into the superconducting film.
    Type: Grant
    Filed: July 11, 1990
    Date of Patent: March 10, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Masashi Hongoh