Abstract: A field effect transistor includes a source region embedded in a semiconductor material layer, a drain region embedded in the semiconductor material layer and laterally spaced from the source region by a channel, a gate stack including a gate dielectric and a gate electrode, a shallow trench isolation portion embedded in an upper portion of the semiconductor material layer and contacting the drain region and the gate stack, and a concave drain extension region continuously extending underneath the shallow trench isolation portion from a bottom surface of the gate dielectric to a bottom surface of the drain region.

Abstract: A field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.

Abstract: A field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.

Abstract: An object of the present invention is to provide a replaceable-blade-type saw in which a handle fitting part can be insertably engaged in a guide member even if the width dimension of the handle fitting part is greater than the width dimension of the guide member. In a handle fitting part 3 of a saw blade 1 is formed a slit part 8, which is configured from a first slit part 6 formed inward from the side edge part of the handle fitting part 3, and a second slit part 7 formed as a continuation of the first slit part 6 as well as being formed toward the distal end side of the handle fitting part 3 from an inner end part 6A of the first slit part 6, and a slit outer-side part 9 positioned on the outer side of the slit part 8 of the handle fitting part 3 is elastically moved or elastically deformed inward by the slit part 8 when bearing external force exerted inward from the side-edge-part side.

Abstract: A field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.

Abstract: A field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.

Abstract: A semiconductor structure includes a high voltage field effect transistor having metal-insulator-semiconductor active region contact structures and a low voltage field effect transistor having metal-semiconductor active region contact structures, and at least one of a smaller gate dielectric thickness or a smaller gate length than the high voltage field effect transistor.

Abstract: An object of the present invention is to provide a replaceable-blade-type saw in which a handle fitting part can be insertably engaged in a guide member even if the width dimension of the handle fitting part is greater than the width dimension of the guide member. In a handle fitting part 3 of a saw blade 1 is formed a slit part 8, which is configured from a first slit part 6 formed inward from the side edge part of the handle fitting part 3, and a second slit part 7 formed as a continuation of the first slit part 6 as well as being formed toward the distal end side of the handle fitting part 3 from an inner end part 6A of the first slit part 6, and a slit outer-side part 9 positioned on the outer side of the slit part 8 of the handle fitting part 3 is elastically moved or elastically deformed inward by the slit part 8 when bearing external force exerted inward from the side-edge-part side.

Abstract: Vehicular resin glass includes: a heat ray reflection coating; a resin glass substrate that covers the heat ray reflection coating; a frame portion that covers a circumferential edge portion of the heat ray reflection coating; and a shield portion that is provided between the resin glass substrate and the heat ray reflection coating and extends from the circumferential edge portion of the heat ray reflection coating over an inner circumferential end of the frame portion.

Abstract: A thermoplastic resin composition having good balance among impact resistance, flame retardancy, heat resistance and flowability all of which are required for thin molded articles high-dimensionally. The flame retardant resin composition comprises 100 parts by weight of a resin component comprising (A) a polycarbonate resin and (B) a polycarbonate-polydiorganosiloxane copolymer resin obtained by copolymerizing a dihydric phenol with a hydroxyaryl-terminated polydiorganosiloxane, (C) 3 to 35 parts by weight of an organic phosphorus-based flame retardant or 0.005 to 5 parts by weight of an organic metal salt-based flame retardant, (D) 0.1 to 30 parts by weight of a silicate mineral and (E) 0.1 to 3 parts by weight of a dripping inhibitor, and, if necessary, (F) 3 to 45 parts by weight of a styrene resin wherein the polydiorganosiloxane content of the component (B) in the composition is 0.2 to 0.6 wt %.

Abstract: A mounting substrate includes: a base; and at least one pair of wiring patterns disposed apart from each other on the base. At least one of the wiring patterns has a mounting portion, which is configured to support an electronic part thereon and which is rectangular in a plan view. The at least one of the wiring patterns defines a hole, which exposes a part of the base and which is disposed in at least a part of an outer edge of the mounting portion.

Abstract: According to an embodiment, a clock synchronization management device includes an accuracy evaluation unit and a network formation unit. The accuracy evaluation unit evaluates the accuracy of a clock for synchronization with respect to each of devices constituting a decentralization system and classifies each of the devices into a plurality of divisions based on whether each of the devices is capable of supplying at least the clock for synchronization to another device. The network formation unit identifies a device capable of supplying the clock for synchronization based on a classification by the accuracy evaluation unit and causes a device incapable of supplying the clock for synchronization to another device to synchronize with the identified device.

Abstract: Vehicular resin glass includes: a heat ray reflection coating; a resin glass substrate that covers the heat ray reflection coating; a frame portion that covers a circumferential edge portion of the heat ray reflection coating; and a shield portion that is provided between the resin glass substrate and the heat ray reflection coating and extends from the circumferential edge portion of the heat ray reflection coating over an inner circumferential end of the frame portion.

Abstract: A mounting substrate includes: a base; and at least one pair of wiring patterns disposed apart from each other on the base. At least one of the wiring patterns has a mounting portion, which is configured to support an electronic part thereon and which is rectangular in a plan view. The at least one of the wiring patterns defines a hole, which exposes a part of the base and which is disposed in at least a part of an outer edge of the mounting portion.

Abstract: An electric fuse includes a conductive material formed on a top surface of an insulating material. The conductive material includes a wiring portion, and first and second terminal portions arranged in two ends of the wiring portion so that the wiring portion is located between the first and second terminal portions. The first terminal portion, the wiring portion, and the second terminal portion are lined up in a first direction. The first and second terminal portions each have a width larger than a width of the wiring portion in a second direction perpendicular to the first direction. The electric fuse includes a film including an opening which exposes a region between the first terminal portion and the second terminal portion. The film is formed above at least a part of the wiring portion and has a tensile stress.

Abstract: A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.

Abstract: A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.

Abstract: A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.

Abstract: A thermoplastic resin composition having good balance among impact resistance, flame retardancy, heat resistance and flowability all of which are required for thin molded articles high-dimensionally. The flame retardant resin composition comprises 100 parts by weight of a resin component comprising (A) a polycarbonate resin and (B) a polycarbonate-polydiorganosiloxane copolymer resin obtained by copolymerizing a dihydric phenol with a hydroxyaryl-terminated polydiorganosiloxane, (C) 3 to 35 parts by weight of an organic phosphorus-based flame retardant or 0.005 to 5 parts by weight of an organic metal salt-based flame retardant, (D) 0.1 to 30 parts by weight of a silicate mineral and (E) 0.1 to 3 parts by weight of a dripping inhibitor, and, if necessary, (F) 3 to 45 parts by weight of a styrene resin wherein the polydiorganosiloxane content of the component (B) in the composition is 0.2 to 0.6 wt %.