Patents by Inventor Masashi IWARA
Masashi IWARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10559823Abstract: A manganese nickel composite hydroxide which serves as a starting material for positive electrode active materials for secondary batteries, and the secondary battery having low resistance and high output characteristics. A manganese nickel composite hydroxide according to the present invention is represented by general formula (A) Mn1?x?yNixMy(OH)2+?(wherein 0?×?0.27, 0?y?0.05, 0???0.5, and M represents at least one element selected from among Mg, Al, Ca, Ba, Sr, Ti, V, Fe, Cr, Co, Cu, Zr, Nb, Mo and W), and has an SO4 content of 0.90% by weight or less, an Na content of 0.04% by weight or less, a BET specific surface area of from 40 m2/g to 70 m2/g (inclusive), and a value obtained by [(d90-d10)/(average particle diameter)] of 0.90 or less, said value being an index indicating the expanse of the particle size distribution.Type: GrantFiled: August 22, 2016Date of Patent: February 11, 2020Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Tatsuya Takahashi, Masashi Iwara
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Publication number: 20180205079Abstract: A manganese nickel composite hydroxide which serves as a starting material for positive electrode active materials for secondary batteries, and the secondary battery having low resistance and high output characteristics. A manganese nickel composite hydroxide according to the present invention is represented by general formula (A) Mn1?x?yNixMy(OH)2+? (wherein 0?×?0.27, 0?y?0.05, 0???0.5, and M represents at least one element selected from among Mg, Al, Ca, Ba, Sr, Ti, V, Fe, Cr, Co, Cu, Zr, Nb, Mo and W), and has an SO4 content of 0.90% by weight or less, an Na content of 0.04% by weight or less, a BET specific surface area of from 40 m2/g to 70 m2/g (inclusive), and a value obtained by [(d90 -d10)/(average particle diameter)] of 0.90 or less, said value being an index indicating the expanse of the particle size distribution.Type: ApplicationFiled: August 22, 2016Publication date: July 19, 2018Inventors: Tatsuya Takahashi, Masashi Iwara
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Patent number: 10000842Abstract: Provided is an oxide sintered body that, when used to obtain an oxide semiconductor thin film by sputtering, can achieve a low carrier concentration and a high carrier mobility. Also provided is a sputtering target using the oxide sintered body. The oxide sintered body contains, as oxides, indium, gallium, and at least one positive divalent element selected from the group consisting of nickel, cobalt, calcium, strontium, and lead. The gallium content, in terms of the atomic ratio Ga/(In+Ga), is from 0.20 to 0.45, and the positive divalent element content, in terms of the atomic ratio M/(In+Ga+M), is from 0.0001 to 0.05. The amorphous oxide semiconductor thin film, which is formed using the oxide sintered body as a sputtering target, can achieve a carrier concentration of less than 3.0×1018 cm?3 and a carrier mobility of at least 10 cm2V?1 sec?1.Type: GrantFiled: June 24, 2015Date of Patent: June 19, 2018Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki Nakayama, Eiichiro Nishimura, Fumihiko Matsumura, Masashi Iwara
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Patent number: 9941415Abstract: Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0×1018 cm?3, and a carrier mobility of 10 cm2V?1 sec?1 or higher.Type: GrantFiled: May 20, 2015Date of Patent: April 10, 2018Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki Nakayama, Eiichiro Nishimura, Fumihiko Matsumura, Masashi Iwara
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Patent number: 9768316Abstract: Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In2O3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier density and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In+Ga) atomic ratio, has a In2O3 phase having a bixbyite structure as the main crystal phase, and has a GaInO3 phase having a ?-Ga2O3-type structure, or a GaInO3 phase having a ?-Ga2O3-type structure and a (Ga, In)2O3 phase finely dispersed therein. The amorphous oxide thin film is finely processed by performing etching using photolithography, and is annealed.Type: GrantFiled: July 16, 2014Date of Patent: September 19, 2017Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki Nakayama, Eiichiro Nishimura, Masashi Iwara
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Patent number: 9732004Abstract: Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.0×1018 cm?3 or lower, and a carrier mobility of 10 cm2 V?1 sec?1 or higher.Type: GrantFiled: April 15, 2015Date of Patent: August 15, 2017Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki Nakayama, Eiichiro Nishimura, Fumihiko Matsumura, Masashi Iwara
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Patent number: 9688580Abstract: Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×1018 cm?3 or lower, and a carrier mobility of 10 cm2V?1 sec?1 or higher.Type: GrantFiled: April 15, 2015Date of Patent: June 27, 2017Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki Nakayama, Eiichiro Nishimura, Fumihiko Matsumura, Masashi Iwara
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Patent number: 9670578Abstract: An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in terms of Zn/(In+Ga+Zn) atomic ratio. This crystalline oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 8.0×1017 cm?3 or less and a carrier mobility of 10 cm2/V·s or greater.Type: GrantFiled: February 12, 2015Date of Patent: June 6, 2017Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki Nakayama, Eiichiro Nishimura, Fumihiko Matsumura, Masashi Iwara
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Patent number: 9670577Abstract: An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.20 or more and 0.49 or less in terms of Ga/(In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in terms of Zn/(In+Ga+Zn) atomic ratio. This amorphous oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 4.0×1018 cm?3 or less and a carrier mobility of 10 cm2/V*s or greater.Type: GrantFiled: February 12, 2015Date of Patent: June 6, 2017Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki Nakayama, Eiichiro Nishimura, Fumihiko Matsumura, Masashi Iwara
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Publication number: 20170137324Abstract: Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains, as an oxide, one or more positive divalent elements selected from the group consisting of indium, gallium, nickel, cobalt, calcium, strontium, and lead. The gallium content is less than 0.08 to 0.20 in terms of Ga/(In+Ga) atomic ratio, and the positive dyad (M) content is 0.0001 to 0.05 in terms of M/(In+Ga+M) atomic ratio. In a crystalline oxide semiconductor thin film formed using the oxide sintered compact as a sputtering target, the carrier density is less than 1×1018 cm?3, and the carrier mobility is at least 10 cm2V?1sec?1.Type: ApplicationFiled: June 24, 2015Publication date: May 18, 2017Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Fumihiko MATSUMURA, Masashi IWARA
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Publication number: 20170130329Abstract: Provided is an oxide sintered body that, when used to obtain an oxide semiconductor thin film by sputtering, can achieve a low carrier concentration and a high carrier mobility. Also provided is a sputtering target using the oxide sintered body. The oxide sintered body contains, as oxides, indium, gallium, and at least one positive divalent element selected from the group consisting of nickel, cobalt, calcium, strontium, and lead. The gallium content, in terms of the atomic ratio Ga/(In+Ga), is from 0.20 to 0.45, and the positive divalent element content, in terms of the atomic ratio M/(In+Ga+M), is from 0.0001 to 0.05. The amorphous oxide semiconductor thin film, which is formed using the oxide sintered body as a sputtering target, can achieve a carrier concentration of less than 3.0×1018 cm?3 and a carrier mobility of at least 10 cm2V?1 sec?1.Type: ApplicationFiled: June 24, 2015Publication date: May 11, 2017Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Fumihiko MATSUMURA, Masashi IWARA
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Publication number: 20170092780Abstract: Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0×1018cm?3, and a carrier mobility of 10 cm2V?1sec?1 or higher.Type: ApplicationFiled: May 20, 2015Publication date: March 30, 2017Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Fumihiko MATSUMURA, Masashi IWARA
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Publication number: 20170077243Abstract: An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium and gallium as oxides, contains nitrogen, and does not contain zinc. The gallium content in terms of the atomic ratio Ga/(In+Ga) is at least 0.005 but less than 0.20, and substantially no GaN phase is included. Furthermore, the sintered oxide preferably has no Ga2O3 phase. A crystalline oxide semiconductor thin film formed using this oxide sintered body as a sputtering target yields a carrier density of 1.0×1018 cm?3 or less, and a carrier mobility of 10 cm2V?1sec?1 or more.Type: ApplicationFiled: March 9, 2015Publication date: March 16, 2017Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Masashi IWARA
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Publication number: 20170076943Abstract: An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium and gallium as oxides, contains nitrogen, and does not contain zinc. The gallium content in terms of the atomic ratio Ga/(In+Ga) is between 0.20 and 0.60, inclusive, and substantially no GaN phase is included. Furthermore, the sintered oxide preferably has no Ga2O3 phase. An amorphous oxide semiconductor thin film formed using this oxide sintered body as a sputtering target yields a carrier density of 3.0×1018 cm?3 or less, and a carrier mobility of 10 cm2 V?1 sec?1 or more.Type: ApplicationFiled: March 9, 2015Publication date: March 16, 2017Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Masashi IWARA
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Publication number: 20170047206Abstract: Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 1.0×1018 cm?3, and a carrier mobility of 10 cm2 V?1 sec?1 or higher.Type: ApplicationFiled: May 20, 2015Publication date: February 16, 2017Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Fumihiko MATSUMURA, Masashi IWARA
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Publication number: 20170029335Abstract: Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.0×1018 cm?3 or lower, and a carrier mobility of 10 cm V?1sec?1 or higher.Type: ApplicationFiled: April 15, 2015Publication date: February 2, 2017Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Fumihiko MATSUMURA, Masashi IWARA
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Publication number: 20170029336Abstract: Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×1018 cm?3 or lower, and a carrier mobility of 10 cm2 V?1 sec?1 or higher.Type: ApplicationFiled: April 15, 2015Publication date: February 2, 2017Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Fumihiko MATSUMURA, Masashi IWARA
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Patent number: 9543447Abstract: The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200° C. or more for a heating time of 1 minute to 120 minutes.Type: GrantFiled: March 6, 2014Date of Patent: January 10, 2017Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Eiichiro Nishimura, Tokuyuki Nakayama, Masashi Iwara
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Publication number: 20160348230Abstract: An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in terms of Zn/(In+Ga+Zn) atomic ratio. This crystalline oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 8.0×1017 cm?3 or less and a carrier mobility of 10 cm2/V·s or greater.Type: ApplicationFiled: February 12, 2015Publication date: December 1, 2016Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Fumihiko MATSUMURA, Masashi IWARA
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Publication number: 20160348229Abstract: An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.20 or more and 0.49 or less in terms of Ga/(In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in terms of Zn/(In+Ga+Zn) atomic ratio. This amorphous oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 4.0×1018 cm?3 or less and a carrier mobility of 10 cm2/V*s or greater.Type: ApplicationFiled: February 12, 2015Publication date: December 1, 2016Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tokuyuki NAKAYAMA, Eiichiro NISHIMURA, Fumihiko MATSUMURA, Masashi IWARA