Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

Abstract: An object of the present invention is to provide an organic thin film transistor having excellent carrier mobility and excellent atmospheric stability, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1) or (2).

Abstract: An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).

Abstract: An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

Abstract: An object of the present invention is to provide an organic thin-film transistor which has an organic semiconductor film produced using a compound having an excellent solubility in organic solvents and has an excellent carrier mobility, a compound, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, a method for manufacturing an organic thin-film transistor, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound which is represented by General Formula (1) or General Formula (2) in an organic semiconductor film (organic semiconductor layer) thereof and has a molecular weight of 3,000 or less. In General Formula (1) and General Formula (2), at least one of R5, . . . , or R8 is a group other than a hydrogen atom.

Abstract: A variable-speed drive device for a power unit to be used in a vehicle equipped with a stopper pin passed through an opening in a master arm for regulating the amount of rotary movement of the master arm. Shock-absorbing device is provided on the master arm or the stopper pin At least a part of the shock-absorbing device is formed to project into the path along which the stopper pin moves relative to the opening of the master arm, from a stopper pin outer surface or from edge portions of a defining edge of the opening in the master arm onto extension of the stopper pin path. As a result, even if the master arm and the stopper pin contact one another at high speed, it is possible to suppress the sound of contact and suppress an increase in the weight of a stopper pin fixing part.

Abstract: A silencer includes conduit with a downstream end portion configured from a tubular member which includes a conduit discharge port extending through a silencer main body and discharges exhaust gas to the outside therethrough. The tubular member includes a resonance communication hole communicating with a resonance chamber and an upstream side communication hole and a downstream side communication hole communicating with a second chamber. A barrier wall serving as a throttle portion for throttling an exhaust path at an intermediate location of the tubular member is provided in the inside of the tubular member and between the upstream side communication hole and the downstream side communication hole.

Abstract: An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent; (Each of R1 R2 represents a hydrogen atom or a substituent; each of Ar1 and Ar2 independently represents a heteroarylene group or an arylene group; V1 represents a divalent linking group; m represents an integer of 0 to 6; cy represents a naphthalene ring or an anthracene ring; each of R3 and R4 represents a hydrogen atom or a substituent; each of Ar3 and Ar4 represents a heterocyclic aromatic ring or an aromatic ring; V2 represents a divalent linking group; p represents an integer of 0 to 6; n represents an integer of equal to or greater than 2; A is a divalent linking group represented by Formula (101?); each of RA1 to RA6

Abstract: A transmission for a vehicle has a main shaft and a counter shaft, which are supported in a transmission case by bearings. Gears on the main shaft and gears on the counter shaft include: shifter gears which are not rotatable but axially movable relative to the shaft, and fixed gears which are rotatable but not axially movable relative to the shaft. Dog clutches are provided between the shifter gears and the fixed gears, and outer races of the bearings supporting the main and counter shafts are affixed to the transmission case. Vibration-absorbing elastic members are pressed against the outer races from axially outside and are set to have a volume of 50% or more of the volume of the outer races. With such configuration, the vibration of the bearings supporting both the main and counter shafts of the transmission is attenuated, and striking noise caused by shifting is reduced.

Abstract: Objects of the present invention are to provide a composition for forming an organic semiconductor film that has excellent preservation stability and makes the obtained organic semiconductor element exhibit excellent driving stability in the atmosphere, to provide an organic semiconductor film using the composition for forming an organic semiconductor film, a method for manufacturing the organic semiconductor film, an organic semiconductor element, a method for manufacturing the organic semiconductor element, and to provide a novel organic semiconductor compound. A composition for forming an organic semiconductor film of the present invention contains a specific organic semiconductor having an alkoxyalkyl group as a component A and a solvent as a component B, in which a content of a non-halogen-based solvent is equal to or greater than 50% by mass with respect to a total content of the component B, and a content of the component A is equal to or greater than 0.7% by mass and less than 15% by mass.

Abstract: Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (101-1), in a semiconductor active layer is an organic film transistor using a compound having high carrier mobility and high solubility in an organic solvent; where each of R111 to R114 independently represents a hydrogen atom or a substituent; each of Ar101 and Ar102 independently represents a heteroarylene group or an arylene group; V101 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V101 may be the same as or different from each other; and n is equal to or greater than 2.

Abstract: Provided are an organic transistor having high carrier mobility that contains a compound represented by Formula (1-1) or (1-2) in a semiconductor active layer; a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; and an organic semiconductor film for a non-light-emitting organic semiconductor device (X1 represents S, O, Se, or NR9; X2 represents S, O, or Se; each of R1 to R9 represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, R6, R7, R8, and R9 represents -L-R; each of R9 to R17 represents a hydrogen atom or a substituent; at least one of R9, R10, R11, R12, R13, R14, R15, R16, and R17 represents -L-R; L represents a specific divalent linking group; and R represents an alkyl group, a cyano group, a vinyl group, an ethynyl group, an oxyethylene group, an oligo-oxyethylene group, a siloxane group, an oligosiloxane group, or a

Abstract: A silencer includes conduit with a downstream end portion configured from a tubular member which includes a conduit discharge port extending through a silencer main body and discharges exhaust gas to the outside therethrough. The tubular member includes a resonance communication hole communicating with a resonance chamber and an upstream side communication hole and a downstream side communication hole communicating with a second chamber. A barrier wall serving as a throttle portion for throttling an exhaust path at an intermediate location of the tubular member is provided in the inside of the tubular member and between the upstream side communication hole and the downstream side communication hole.

Abstract: An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent.

Abstract: An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), (101-1), or (101-2), in a semiconductor active layer is an organic film transistor using a compound having high carrier mobility and high solubility in an organic solvent. (Cy represents a benzene ring, a naphthalene ring, or an anthracene ring; each of R11 to R14 and R15 to R18 independently represents a hydrogen atom or a substituent; each of Ar1 to Ar4 independently represents a heteroarylene group or an arylene group; each of V1 and V2 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V1 may be the same as or different from each other; n is equal to or greater than 2; p represents an integer of 0 to 6; and when p is equal to or greater than 2, two or more groups represented by V2 may be the same as or different from each other.

Abstract: A vehicle exhaust system structure capable of easily improving output performance in comparison with a two-cylinder internal combustion engine having the same displacement and outputting an appealing and excellent exhaust sound relating to the two-cylinder internal combustion engine, in a four-cylinder internal combustion engine or a three-cylinder internal combustion engine. An exhaust pipe structure for an internal combustion engine is configured such that exhaust pipes are respectively connected to four cylinders of a four-cylinder internal combustion engine, the two exhaust pipes of the exhaust pipes are formed as long exhaust pipes having a long pipe length while the other two exhaust pipes thereof are formed as short exhaust pipes having a short pipe length, and a difference in a pipe length between the long exhaust pipes and the short exhaust pipes is set to 150 mm or more.