Abstract: An image forming apparatus includes an image forming unit to form an image on a sheet based on a mode selected from a plurality of modes having different image forming speeds, a memory to store first data for a first mode included in the plurality of modes, the first data indicating a correspondence for the first mode between a type of the sheet and the image forming speed, and second data for a second mode included in the plurality of modes, the second data indicating a correspondence for the second mode between a type of the sheet and the image forming speed, and a display. A controller determines a first image forming speed for the first mode from the first data based on the type of the sheet, and determines a second image forming speed for the second mode from the second data.

Abstract: A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

Abstract: Provided is a lithium hydroxide production method for producing high-purity lithium hydroxide efficiently and at a lower energy, wherein Li ions alone are recovered in a recovery liquid from a lithium ion extract extracted from a processed member of a lithium secondary battery, using a Li permselective membrane, and lithium hydroxide is produced from the recovery liquid.

Abstract: Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon film 3A through a light-transmittable member 4 that can transmit the laser light.

Abstract: A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

Abstract: A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

Abstract: A workpiece inspection device 1 includes a table (3), image capturing unit fixing part (7), first light projection unit (4), second light projection unit (5), linear movement mechanism (8), turning mechanism (9), quality determination unit (10), and control unit (11). The control unit (11) performs first image capturing step of causing first light projection unit (4) to project light and causing image capturing unit (6) to capture image, detailed inspection portion-determination step of setting, portion of workpiece (2) determined to require detailed inspection based on image captured in the first image capturing step, second image capturing step of causing second light projection unit (5) to project light onto the workpiece (2) and causing image capturing unit (6) to capture image of the detailed inspection-requiring portion, and quality determination step of determining quality of the detailed inspection-requiring portion based on image captured in the second image capturing step.

Abstract: A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).

Abstract: A workpiece inspection device 1 includes a table (3), image capturing unit fixing part (7), first light projection unit (4), second light projection unit (5), linear movement mechanism (8), turning mechanism (9), quality determination unit (10), and control unit (11). The control unit (11) performs first image capturing step of causing first light projection unit (4) to project light and causing image capturing unit (6) to capture image, detailed inspection portion-determination step of setting, portion of workpiece (2) determined to require detailed inspection based on image captured in the first image capturing step, second image capturing step of causing second light projection unit (5) to project light onto the workpiece (2) and causing image capturing unit (6) to capture image of the detailed inspection-requiring portion, and quality determination step of determining quality of the detailed inspection-requiring portion based on image captured in the second image capturing step.

Abstract: A laser processing apparatus includes: a laser light source that generates a laser beam; a first beam splitter on which the laser beam is incident; a second beam splitter on which the laser beam having passed through the first beam splitter is incident; and a homogenizer that controls an energy density of the laser beam emitted from the second beam splitter. The laser beam output from the homogenizer includes a p-polarized component and an s-polarized component, and a ratio of energy intensity of the p-polarized component to the s-polarized component is preferably not lower than 0.74 and not higher than 1.23 on a surface of the workpiece.

Abstract: A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101), a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Abstract: A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101); a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Abstract: Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon film 3A through a light-transmittable member 4 that can transmit the laser light.

Abstract: A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).

Abstract: A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).

Abstract: A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).

Abstract: A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.

Abstract: A laser processing apparatus includes: a laser light source that generates a laser beam; a first beam splitter on which the laser beam is incident; a second beam splitter on which the laser beam having passed through the first beam splitter is incident; and a homogenizer that controls an energy density of the laser beam emitted from the second beam splitter. The laser beam output from the homogenizer includes a p-polarized component and an s-polarized component, and a ratio of energy intensity of the p-polarized component to the s-polarized component is preferably not lower than 0.74 and not higher than 1.23 on a surface of the workpiece.

Abstract: A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101); a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

Abstract: A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).