Patents by Inventor Masashi Mukaida

Masashi Mukaida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8148300
    Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: April 3, 2012
    Assignees: Japan Science and Technology Agency, Central Research Institute of Electric Power Industry
    Inventors: Kaname Matsumoto, Masashi Mukaida, Yutaka Yoshida, Ataru Ichinose, Shigeru Horii
  • Publication number: 20100267568
    Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
    Type: Application
    Filed: April 30, 2010
    Publication date: October 21, 2010
    Inventors: Kaname Matsumoto, Masashi Mukaida, Yutaka Yoshida, Ataru Ichinose, Shigeru Horii
  • Patent number: 7772157
    Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: August 10, 2010
    Assignees: Japan Science and Technology Agency, Central Research Institute of Electric Power Industry
    Inventors: Kaname Matsumoto, Masashi Mukaida, Yutaka Yoshida, Ataru Ichinose, Shigeru Horii
  • Publication number: 20060258539
    Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
    Type: Application
    Filed: August 27, 2004
    Publication date: November 16, 2006
    Inventors: Kaname Matsumoto, Masashi Mukaida, Yutaka Yoshida, Ataru Ichinose, Shigeru Horii
  • Patent number: 5821200
    Abstract: A lattice matching device includes a substrate having thereon monocrystal regions having different lattice mismatches with respect to a LnBa.sub.2 Cu.sub.3 O.sub.x superconductor. A superconducting thin film is formed on the substrate, which film consists essentially of a superconductor of LnBa.sub.2 Cu.sub.3 O.sub.x wherein Ln represents yttrium or a lanthanide, and 6<x<7. The first and second superconducting thin film portions have different axes of orientation perpendicular to a main surface of the substrate, and arranged in contact with each other or at a distance which allows transmission of electron pairs from one to another.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: October 13, 1998
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Masashi Mukaida, Shintaro Miyazawa, Junya Kobayashi
  • Patent number: 5593950
    Abstract: A lattice matching device includes a substrate having thereon monocrystal regions having different lattice mismatches with respect to a LnBa.sub.2 Cu.sub.3 O.sub.x superconductor. A superconducting thin film is formed on the substrate, which film consists essentially of a superconductor of LnBa.sub.2 Cu.sub.3 O.sub.x wherein Ln represents yttrium or a lanthanide, and 6<x<7. The first and second superconducting thin film portions have different axes of orientation perpendicular to a main surface of the substrate, and arranged in contact with each other or at a distance which allows transmission of electron pairs from one to another.
    Type: Grant
    Filed: July 27, 1993
    Date of Patent: January 14, 1997
    Assignee: Nippon Telegraph & Telephone Corporation
    Inventors: Masashi Mukaida, Shintaro Miyazawa, Junya Kobayashi
  • Patent number: 4764898
    Abstract: The superconducting memory device comprises a thin type-II superconductor film for storing an Abrikosov vortex, a write control line for generating the vortex in the superconductor film, and a vortex detector for detecting a polarity of the vortex stored in the film. The vortex detector includes a Josephson junction and a read control current line. The Josephson junction comprises a base electrode, a counter electrode and a tunnel barrier region sandwiched between the base electrode and the counter electrode. By utilizing a fact that a shift direction of the threshold characteristics of the vortex detector corresponds to the polarity of the vortex stored in the superconductor film, a flux crossing the tunnel barrier region of the Josephson junction due to the stored vortex is detected by the read control line.
    Type: Grant
    Filed: December 12, 1985
    Date of Patent: August 16, 1988
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Kazunori Miyahara, Masashi Mukaida, Koji Hokawa