Abstract: A sputtering target comprising an oxide sintered body that includes an indium element, a tin element and a zinc element, wherein the oxide sintered body includes one or more selected from a hexagonal layered compound represented by In2O3(ZnO)m, a hexagonal layered compound represented by InXO3(ZnO)n, a rutile structure compound represented by SnO2 and an ilmenite structure compound represented by ZnSnO3, and a spinel structure compound represented by Zn2SnO4, in the formulas, X is a metal element that can form a hexagonal layered compound together with an indium element and a zinc element, m is an integer of 1 or more and n is an integer of 1 or more, and an agglomerate of the spinel structure compound is 5% or less of the entire sintered body.

Abstract: A sputtering target comprising an oxide sintered body that includes an indium element, a tin element and a zinc element, wherein the oxide sintered body includes one or more selected from a hexagonal layered compound represented by In2O3(ZnO)m, a hexagonal layered compound represented by InXO3(ZnO)n, a rutile structure compound represented by SnO2 and an ilmenite structure compound represented by ZnSnO3, and a spinel structure compound represented by Zn2SnO4, in the formulas, X is a metal element that can form a hexagonal layered compound together with an indium element and a zinc element, m is an integer of 1 or more and n is an integer of 1 or more, and an agglomerate of the spinel structure compound is 5% or less of the entire sintered body.

Abstract: A transparent conductive film which is an indium zinc oxide film comprising In2O3 crystals, and has an X-ray diffraction peak using a Cuk? ray that appears within at least one area selected from areas ranging from 2?=35.5° to 37.0°, 39.0° to 40.5° and 66.5° to 67.8°, wherein the peak intensities of peaks that appear within areas ranging from 2?=30.2° to 30.8° and 54.0° to 57.0° are 20% or less of the peak intensity of the main peak.

Abstract: A transparent conductive film which is an indium zinc oxide film comprising In2O3 crystals, and has an X-ray diffraction peak using a Cuk? ray that appears within at least one area selected from areas ranging from 2?=35.5° to 37.0°, 39.0° to 40.5° and 66.5° to 67.8°, wherein the peak intensities of peaks that appear within areas ranging from 2?=30.2° to 30.8° and 54.0° to 57.0° are 20% or less of the peak intensity of the main peak.

Abstract: A transparent electrically conductive layer having practically sufficient electrical conductivity and light transmittance and having excellent resistance to moist heat and etching properties, and an electrically conductive transparent substrate utilizing the transparent electrically conductive layer, the transparent electrically conductive layer being formed of a substantially amorphous oxide containing indium (In) and zinc (Zn) as main cation components or a substantially amorphous oxide containing indium (In), zinc (Zn) and at least one other third element having a valence of at least 3, in which the atomic ratio of In, In/(In+Zn), is 0.50 to 0.90 or the atomic ratio of the total amount of the third element(s), (total third element)/(In+Zn+total third element(s)), when at least one other third element is contained, is 0.2 or less.