Abstract: A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.

Abstract: A magnetoresistive device comprises: a first shield layer and a second shield layer disposed at a specific distance from each other; an MR element disposed between the first shield layer and the second shield layer; and an underlying layer disposed between the first shield layer and the MR element. The underlying layer, the MR element and the second shield layer are stacked on the first shield layer. The underlying layer includes: a first layer having a bottom surface that is in contact with the first shield layer; and a second layer having a bottom surface that is in contact with a top surface of the first layer and having a top surface that is in contact with the MR element. The first layer is made of a material including at least one of Ta, Ti, W, Hf and Y. The second layer is made of an alloy including Ni and Cr.

Abstract: A thin-film magnetic head comprises at least one of a magnetoresistive device and an electromagnetic transducer, and a heater adapted to generate heat upon energization. A method of making this thin-film magnetic head comprises a heater forming step of forming the heater, and an annealing step of annealing the heater formed by the heater forming step.

Abstract: A thin-film magnetic head comprises at least one of an electromagnetic transducer and a magnetoresistive device, and a heater member adapted to generate heat upon energization. The heater member contains NiCu.

Abstract: It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.

Abstract: A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.

Abstract: To provide a photo-interrupter which can anchor a light-emitting device and a light-receiving device to a concave case in an expensive configuration.

Abstract: The semiconductor device (A) comprises a semiconductor chip (3), a protective package (4) covering the semiconductor chip (3), a first lead (1), and a second lead (2). The semiconductor chip (3) is placed at an inner end (10a) of the first lead (1). Further, the semiconductor chip (3) is connected to an inner end (20a) of the second lead (2) via a wire (W). The first lead (1) includes an outer portion (11) extending out of the protective package (4) whereas the second lead (2) includes an outer portion (21) extending out of the protective package (4). These two outer portions (11, 21) are flat.

Abstract: Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head.

Abstract: To provide a photo-interrupter which can anchor a light-emitting device and a light-receiving device to a concave case in an expensive configuration. The photo-interrupter (1) includes a light-emitting device (6) and a light-receiving device (7) each with a lens projected forward being housed oppositely to each other within an concave case (2) of an opaque resin mold. The sides of the lenses (6a) and (7a) of the light-emitting device (6) and the light-receiving device (7) are secured onto the end faces 5x and 5y of openings (5a) and (5b) formed on the opposite inner surfaces of the case (2). The left and right outer surfaces (2x) and (2y) of the case (2) are bent to form pressing portions (2u) and (2v) The backs of the light-emitting device (6) and the light-receiving device (7) are pressed by the pressing portions so that they are anchored to the case (2).

Abstract: A reflective sensor for detecting the presence or absence of the subject to be detected at the detecting position. The reflective sensor is provided with a sensor portion and a filter. The sensor portion includes a light-emitting element that emits light at the detecting position and a light-receiving element that receives light reflected on the subject and generates an electrical signal corresponding to a quantity of received light. The filter is disposed between the sensor portion and the detecting position. The filter is made of a light-transmitting material capable of transmitting light heading to the detecting position from the light-emitting element and light heading to the light-receiving element from the subject, and prevents intrusion of dust into the sensor portion.

Abstract: Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer.

Abstract: Provided are a magnetic transducer having a higher rate of resistance change and a larger magnitude of resistance change and having better stability of properties, and a thin film magnetic head. A stack of an MR element has a stacked structure comprising an underlayer, an antiferromagnetic layer, a ferromagnetic layer, a first nonmagnetic layer, a first soft magnetic layer, a second soft magnetic layer, a second nonmagnetic layer and a high-resistance layer, which are stacked in sequence on the underlayer. The orientation of magnetization of the ferromagnetic layer is fixed by exchange coupling between the ferromagnetic layer and the antiferromagnetic layer. The orientations of magnetizations of the first soft magnetic layer and the second soft magnetic layer change according to an external magnetic field.

Abstract: Provided are a magnetic transducer and a thin film magnetic head having good thermal stability and capable of obtaining a high exchange coupling magnetic field, a method of manufacturing a magnetic transducer and a method of a manufacturing a thin film magnetic head. An MR element has a stack having a stacked structure comprising an underlayer, a crystal-growth inhibitor layer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a cap layer, which are stacked in sequence. The ferromagnetic layer has an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer, which are stacked in this order on the nonmagnetic layer.

Abstract: An object of the invention is to provide a magnetic transducer and a thin film magnetic head having resistance properties adaptable to ultra-high-density recording. An MR element, the magnetic transducer, has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. The stack has a first region and a second region into which the stack is divided in the direction of stacking thereof. The first and second regions of the stack differ from each other in the material or composition of the magnetic layers. The MR element has the above-described structure, thereby being capable of obtaining high resistance and a high rate of resistance change.

Abstract: A magnetic transducer and a thin film magnetic head capable of increasing a resistance change are provided. A spin valve film has a stacked structure comprising a soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the soft magnetic layer. The ferromagnetic layer includes an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer. The inner ferromagnetic layer and the outer ferromagnetic layer are magnetically coupled to each other sandwiching the coupling layer, whereby the magnetizations oriented in opposite directions are generated.

Abstract: A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.

Abstract: A semiconductor device (A) includes a first lead (4) to which a semiconductor chip (1) is bonded, a second lead (5) connected to the semiconductor chip (1) via a wire (W), and a resin package (2) sealing the semiconductor chip (1) and the wire (W). Of the first and the second leads (4, 5), at least one of inner terminals (4a, 5b) enclosed in the resin package (2) is bent in a direction of a thickness of the resin package (2).

Abstract: An optical sensor includes a light-emitting element and first to third light-receiving elements. The light-emitting element is arranged on a first side of a transfer path along which a recording sheet is moved. The first light-receiving element is arranged on a second side of the transfer path which is opposite to the first side. The second and the third light-receiving elements are arranged on the first side of the transfer path in the vicinity of the light-emitting element.

Abstract: A reflection sensor (1) for detecting presence of a detection object is provided. The reflection sensor comprises a light emitting element (31), a light receiving element (32) cooperative with the light emitting element, a first resin body (21) enclosing the light emitting element and including a first surface and a second surface away from the first surface, a second resin body (22) enclosing the light receiving element and including a third surface and a fourth surface away from the third surface, and a third resin body (25) holding the first and the second resin bodies. The reflection sensor further comprises a first pair of leads (5a, 5b) electrically connected to the light emitting element via a wire (4a) for example, and a second pair of leads (5c, 5d) electrically connected to the light receiving element via another wire (4b) for example. The leads of the first pair and the second pair extend out of one side surface (2a) or another side surface (2b) of the third resin body.