Abstract: According to one embodiment, a display device comprises a first area including a pixel and a second area different from the first area, wherein the pixel comprises a pixel electrode, an organic material layer including a light-emitting layer, a common electrode, a first insulating layer, a second insulating layer having a refractive index lower than that of the first insulating layer, and a third insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area comprises the first insulating layer provided therein, the second area does not comprise the second insulating layer.

Abstract: A method for manufacturing semiconductor device according to an embodiment includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the metal oxide layer is formed above the gate insulating layer; removing the metal oxide layer after the heat treatment; and forming a gate electrode above the gate insulating layer.

Abstract: A semiconductor device according to an embodiment includes: an oxide insulating layer; an oxide semiconductor layer; a gate electrode; a gate insulating layer; and a first insulating layer, wherein the semiconductor device is divided into a first to a third regions, a thickness of the gate insulating layer in the first region is 200 nm or more, the gate electrode contacts the first insulating layer in the first region, the oxide semiconductor layer contacts the first insulating layer in the second region, an amount of impurities contained in the oxide semiconductor layer in the second region is greater than an amount of impurities contained in the oxide semiconductor layer in the first region, and an amount of impurities contained in the oxide insulating layer in the third region is greater than an amount of impurities contained in the oxide insulating layer in the second region.

Abstract: The present disclosure provides a negative electrode material that can improve the cycle characteristics of a battery. The negative electrode material according to the present disclosure contains a reduced form of a solid electrolyte material. The solid electrolyte material is denoted by Formula (1): Li?M?X?. Herein, in Formula (1), each of ?, ?, and ? is a value greater than 0, M represents at least one element selected from the group consisting of metal dements except Li and semimetals, and X represents at least one dement selected from the group consisting of F, Cl, Br, and I.

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Abstract: A method for manufacturing a semiconductor device includes depositing a first metal oxide film with aluminum as a major component on a substrate, depositing an amorphous oxide semiconductor film on the first metal oxide film under an oxygen partial pressure of 3% to 5%, processing the oxide semiconductor film into a patterned oxide semiconductor layer, crystallizing the oxide semiconductor layer by performing a first heat treatment on the patterned oxide semiconductor layer, processing the first metal oxide film using the crystallized oxide semiconductor layer as a mask, depositing a gate insulating film on the oxide semiconductor layer, and forming a gate electrode on the gate insulating film, wherein a thickness of the oxide semiconductor film is more than 10 nm and 30 nm or less.

Abstract: A semiconductor device according to an embodiment of the present invention includes an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, a gate electrode, and a protective insulating layer. The gate insulating layer includes a first region overlapping the gate electrode and a second region not overlapping the gate electrode. The second region is in contact with the protective insulating layer. The oxide insulating layer includes a third region overlapping the gate electrode and a fourth region not overlapping the gate electrode and the oxide semiconductor layer. The fourth region is in contact with the gate insulating layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. Each of the source region, the drain region, and the second region contains an impurity. A hydrogen concentration of the second region is greater than a hydrogen concentration of the first region.

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

Abstract: A semiconductor device according to an embodiment includes: a substrate; a metal oxide layer arranged above the substrate and having aluminum as the main component of the metal oxide layer; an oxide semiconductor layer arranged above the metal oxide layer; a gate electrode facing the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode, wherein a thickness of the metal oxide layer is 1 nm or more and 4 nm or less.

Abstract: An image forming apparatus includes a developer, a development device, and an image bearing member. The developer includes an initial developer containing an initial carrier and a replenishment developer containing a replenishment carrier. The initial carrier has a surface roughness Sa1 of at least 0.3 ?m and no greater than 1.0 ?m. A ratio Sa1/Sa2 of the surface roughness Sa1 of the initial carrier to a surface roughness Sa2 of the replenishment carrier is at least 1.2 and no greater than 3.4. The packing volume Vp calculated from equation (1)“Vp=100×Y/(Z×DS)” was at least 40% and no greater than 70%. In equation (1), Y represents an amount of the developer conveyed by a developer bearing member. Z represents an apparent density of the initial developer. DS represents a width of a space between the developer bearing member and the image bearing member.

Abstract: A developer set includes a first developer and a second developer. The first developer contains a first toner containing first toner particles and a first carrier containing first carrier particles. The second developer contains a second toner containing second toner particles and a second carrier containing second carrier particles. The first toner particles and the second toner particles each include a toner mother particle and external additive particles attached to the surface of the toner mother particle. The external additive particles include spacer particles. The spacer particles have a number average primary particle diameter of at least 32 nm and no greater than 145 nm. The first carrier particles each include a first carrier mother particle and strontium titanate particles attached to the surface of the first carrier mother particle.

Abstract: A material discharge device includes: a drive motor; a screw having a groove formation surface and configured to rotate; a barrel having a facing surface and formed with a communication hole through which a plasticized material flows; a heating unit configured to heat the material; a nozzle from which the material is injected to an outside; and a plurality of measurement units configured to measure a pressure or a temperature of the material. The measurement units are disposed at an outer periphery of a nozzle channel wall, and a thickness of the nozzle channel wall satisfies the following (1) or (2): (1) when the nozzle channel wall is made of a material containing iron as a main component, the thickness of the nozzle channel wall is 0.2 mm or more and 2.5 mm or less; and (2) when the nozzle channel wall is made of a material containing aluminum as a main component, the thickness of the nozzle channel wall is 0.2 mm or more and 4 mm or less.

Abstract: An actuator unit that drives a switching mechanism for a shift range of an automatic transmission is provided. The actuator unit includes a motor that generates a drive force for driving the switching mechanism, a control substrate that controls the motor, a connector that connects a wire to the control substrate, a housing that includes an opening, a cover that covers the opening, and a shock absorption material that includes a first shock absorption material and a second shock absorption material. The motor and the control substrate are positioned in a housing space defined by the housing and the cover. The control substrate is fixed to the housing. The first shock absorption material and the second shock absorption material are positioned between the control substrate and the cover, and contacts both the control substrate and the cover.

Abstract: An actuator unit that drives a switching mechanism for a shift range of an automatic transmission is provided. The actuator unit includes a motor that generates a drive force for driving the switching mechanism, a control substrate that controls the motor, a connector that connects a wire to the control substrate, a housing that includes an opening, a cover that covers the opening, and a shock absorption material that includes a first shock absorption material and a second shock absorption material. The motor and the control substrate are positioned in a housing space defined by the housing and the cover. The control substrate is fixed to the housing. The first shock absorption material and the second shock absorption material are positioned between the control substrate and the cover, and contacts both the control substrate and the cover.

Abstract: A hydrofoil craft includes a hull including a bottom that spreads from a bow to a stern; and a hydrofoil mechanism provided on the bow side of the hull. The hull further includes an accommodating recess formed therein, and the accommodating recess is recessed toward the stern side between the bow and the bottom to accommodate the hydrofoil mechanism. A retreat surface is formed between the bottom and a recess main surface facing the bow side in the accommodating recess, and the retreat surface extends toward the stern side in a downward direction and is connected to the bottom.

Abstract: A hydrofoil craft includes: a hull including a bottom that spreads from a bow to a stern; and a hydrofoil mechanism provided on the bow side of the hull. The hull includes an accommodating recess formed therein, the accommodating recess being recessed toward the stern side between the bow and the bottom to accommodate the hydrofoil mechanism. A retreat surface is formed between the bottom and a recess main surface facing the bow side in the accommodating recess, the retreat surface extending toward the stern side in a downward direction and being connected to the bottom.

Abstract: A carburetor fuel flow control device having an elongate annular body received in a cavity with an inlet in its side-wall communicating with a fuel supply passage and an outlet downstream of the inlet and adjacent to an end of the body, and a needle valve with a metering portion adjacent one end rotatably and slidably received in the body with the metering portion at least partially lapping or blocking the inlet to change the effective flow area of the inlet in response to generally axial movement of the needle valve relative to the inlet.

Abstract: A vehicle notification apparatus includes an output unit, a riding detector, a driver detector, and a controller. The output unit is configured to output a leaving notification that provides notification of leaving behind of a passenger, etc. The riding detector is configured to detect passenger vehicle entering, passenger vehicle exiting, etc. The driver detector is configured to detect vehicle traveling stop operation, vehicle traveling start operation, driver vehicle entering operation, and driver vehicle exiting operation. The controller is configured to cause output of the leaving notification on a condition that the passenger vehicle entering, etc. has been detected when the vehicle traveling stop operation, the driver vehicle exiting operation, or both are detected, and also to cause the output of the leaving notification each time the vehicle traveling stop operation, the driver vehicle exiting operation, or both are detected, until the passenger vehicle exiting, etc. is detected.

Abstract: Provided is a cap (11) used for a discharge container (1) and provided on a mouth portion (32) of a container main body (10) which is deformed by a pressing force and stores contents (100). The cap (11) includes: a base portion (51) having an annular bottom wall (64) having a discharge port (64a), an annular groove (64c) provided in an outer peripheral edge of the bottom wall (64), a flow port (64d) provided in the groove (64c), and a flow groove (64e) connected to the flow port (64d); a check valve (53) having a cylindrical support portion (81) having one end disposed in the groove (64c), a plurality of elastic pieces (82) connected to the support portion (81), and a valve body (83) connected to the plurality of elastic pieces (82) and opening and closing the discharge port (64a); and a discharge nozzle (52) covering the bottom wall (64).

Abstract: In the container, when the cap is capped on the container opening portion, an inner wall surface of a cylindrical sub-fitting wall portion of the cap and an outer wall surface of a large diameter opening portion of the container opening portion closely contact each other, and an outer wall surface of a cylindrical main fitting wall portion of the cap and an inner wall surface of a small diameter opening portion of the container opening portion closely contact each other. In this way, pressing force that is applied to the outer wall surface of the cylindrical main fitting wall portion of the cap from the inner wall surface of the small diameter opening portion of the container opening portion is increased.