Abstract: An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.

Abstract: An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.

Abstract: An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.

Abstract: In a wavelength detecting apparatus using an etalon, a drift in wavelength measurement by the etalon is stabilized and an adverse influence of out gas is eliminated, so that correct wavelength measurement is realized. The wavelength detecting apparatus includes a housing equipped with a port for use of introducing replacement gas, an etalon set inside the housing, and a moisture-absorbing unit for absorbing at least moisture released inside the housing.

Abstract: A polarized light irradiation apparatus, having at least two plane mirrors, is constructed to prevent reduction of the extinction ratio of the polarized light that irradiates a substrate when there is a change of the direction of polarization of the polarized light that is incident on a reflecting mirror. This is accomplished by forming a protection layer on the surface of the second plane mirror, and selecting the material and optical thickness of the layer in accordance with the angle of incidence and wavelength of the polarized light so that the difference &Dgr; of the phase shifts of the polarization P component and the polarization S component emerging from the second plane mirror satisfies the condition that &Dgr;≦±20°. By doing this, there will be no reduction of the extinction ratio of the polarized light that irradiates the substrate W if there is a change in the polarization direction of the polarized light that is incident on the second plane mirror.

Abstract: A device for measurement of the spectral reflectance of a surface where the reflectance factor of light with a certain wavelength can be measured in a wide wavelength range, including the UV range, and in which a reference reflectance factor can be easily obtained. The device for measurement has a light source part with a xenon lamp; a fiber on the incidence side; a measurement head which emits the light transmitted by the fiber via a convergent lens and a diffuser onto the surface of the measuring object and which receives the light reflected by the surface; a fiber on the exit side; and a spectroradiometer which receives the light which has been transmitted by the fiber on the exit side.

Abstract: In a wavelength detecting apparatus using an etalon, a drift in wavelength measurement by the etalon is stabilized and an adverse influence of out gas is eliminated, so that correct wavelength measurement is realized. The wavelength detecting apparatus includes a housing equipped with a port for use of introducing replacement gas, an etalon set inside the housing, and a moisture-absorbing unit for absorbing at least moisture released inside the housing.

Abstract: A device for measurement of the spectral reflectance of a surface where the reflectance factor of light with a certain wavelength can be measured in a wide wavelength range, including the UV range, and in which a reference reflectance factor can be easily obtained. The device for measurement has a light source part with a xenon lamp; a fiber on the incidence side; a measurement head which emits the light transmitted by the fiber via a convergent lens and a diffuser onto the surface of the measuring object and which receives the light reflected by the surface; a fiber on the exit side; and a spectroradiometer which receives the light which has been transmitted by the fiber on the exit side.

Abstract: A polarized light irradiation apparatus, having at least two plane mirrors, is constructed to prevent reduction of the extinction ratio of the polarized light that irradiates a substrate when there is a change of the direction of polarization of the polarized light that is incident on a reflecting mirror. This is accomplished by forming a protection layer on the surface of the second plane mirror, and selecting the material and optical thickness of the layer in accordance with the angle of incidence and wavelength of the polarized light so that the difference &Dgr; of the phase shifts of the polarization P component and the polarization S component emerging from the second plane mirror satisfies the condition that &Dgr;≦±20°. By doing this, there will be no reduction of the extinction ratio of the polarized light that irradiates the substrate W if there is a change in the polarization direction of the polarized light that is incident on the second plane mirror.