Abstract: A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Abstract: A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Abstract: Provided is a method capable of manufacturing a metal carbonitride film or a metalloid carbonitride film at low temperature. A metal carbonitride film or a metalloid carbonitride film is formed using as a nitrogen source at least one of an N-trialkylsilyl-1,2,3-triazole compound and a 1,2,4-triazole compound represented by the following general formula (1): where Rs are the same or different, each represent a hydrogen atom, a linear, branched or cyclic alkyl group of 1 to 5 carbon atoms or a trialkylsilyl group of 1 to 5 carbon atoms, and, depending on circumstances, bond to each other to form a ring.

Abstract: Provided is a method and apparatus that can form a metal carbonitride film or a metalloid carbonitride film at low temperature. A metal carbonitride film or a metalloid carbonitride film is formed by supplying onto a film formation object a nitrogen source and a metal source or a metalloid source, the nitrogen source containing a guanidine compound represented by the following general formula (1): where a plurality of Rs are the same or different, each represent a hydrogen atom, a linear, branched or cyclic alkyl group of 1 to 5 carbon atoms or a trialkylsilyl group of 1 to 9 carbon atoms, and, depending on circumstances, bond to each other to form a ring.

Abstract: A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R1, R2 and R3 in the compound of nitrogen and carbon are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. Therefore, the SiCN film can be formed while maintaining a satisfactory film forming rate even though the film forming temperature is lowered.

Abstract: A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R1, R2 and R3 in the compound of nitrogen and carbon are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. Therefore, the SiCN film can be formed while maintaining a satisfactory film forming rate even though the film forming temperature is lowered.

Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.

Abstract: The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M i

Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.

Abstract: The present invention relates to a binuclear ruthenium complex dye having a higher absorption coefficient and capable of absorbing light of longer wavelength for realizing a photoelectric conversion element and a photochemical cell which may convert solar light into electricity over a wide wavelength range and exhibit high photoelectric conversion efficiency; and a binuclear ruthenium complex dye for realizing a photoelectric conversion element and a photochemical cell which may have high durability.

Abstract: The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M i

Abstract: The present invention relates to a binuclear ruthenium complex dye having a higher absorption coefficient and capable of absorbing light of longer wavelength for realizing a photoelectric conversion element and a photochemical cell which may convert solar light into electricity over a wide wavelength range and exhibit high photoelectric conversion efficiency; and a binuclear ruthenium complex dye for realizing a photoelectric conversion element and a photochemical cell which may have high durability.

Abstract: The compounds represented by the formula (I) are produced by reacting benzene compound of the formula (IV) or (V) with alkenylidene diacetate of the formula (VI) in the presence of a catalyst comprising one or more members selected from (a) halogenated boron compounds, (b) triflate compounds of Group 11 elements, (c) halogenated compounds of Group 12 elements, and (d) triflate and halogenated compounds of tin and atomic numbers 58 and 66 to 71 elements. R1, R2=H or C1–C10 alkyl group A=Substituted phenyl group corresponding to a compound of formula (IV) or (V), R3, R4=H or C1–C4 alkyl group, m=0 or 1–4, n=1 to 5, k=1 or 2.

Abstract: The compounds represented by the formula (I) are produced by reacting benzene compound of the formula (IV) or (V) with alkenylidene diacetate of the formula (VI) in the presence of a catalyst comprising one or more members selected from (a) halogenated boron compounds, (b) triflate compounds of Group 11 elements, (c) halogenated compounds of Group 12 elements, and (d) triflate and halogenated compounds of tin and atomic numbers 58 and 66 to 71 elements. R1, R2=H or C1-C10 alkyl group A=Substituted phenyl group corresponding to a compound of formula (IV) or (V), R3, R4=H or C1-C4 alkyl group, m=0 or 1-4, n=1 to 5, k=1 or 2.

Abstract: 1-acetoxy-3-(substituted phenyl)propene compounds represented by the general formula (I): in which formula (I), R1 and R2 respectively and independently from each other represent a member selected from the groups consisting of a hydrogen atom and alkyl groups having 1 to 10 carbon atoms, R1 and R2 may form, together with carbon atoms located in the 2- and 3-positions of the propene group, a cyclic group; and A represents a member selected from a group of substituted phenyl groups represented by the formulae (II) and (III): wherein R3 and R4 respectively and independently from each other represent an alkyl group having 1 to 4 carbon atoms, m represents an integer of 0 or 1 to 4, n represents an integer of 1 to 5 and k represents an integer of 1 or 2.

Abstract: The present invention is to provide a process for producing piperonal which comprises continuous three steps of: (A) an addition reaction step wherein 1,2-methylenedioxybenzene and glyoxylic acid are reacted to form 3,4-methylenedioxymandelic acid in the presence of a strong acid, (B) an extraction step wherein an organic solvent is then added to a reaction mixture and the mixture is neutralized with a base to extract 3,4-methylenedioxymandelic acid in an organic solvent layer, and separating the organic solvent layer and an aqueous layer, and (C) an oxidation reaction step wherein the aqueous layer is removed and the organic solvent layer is concentrated, and then, nitric acid is added to a concentrate, and the 3,4-methylenedioxymandelic acid and nitric acid are reacted to form piperonal.

Abstract: A process for preparing 3,4-methylenedioxymandelic acid by reacting 1,2-methylenedioxybenzene with glyoxylic acid in the presence of a strong acid and of at least one substance selected from the group consisting of an aprotic organic solvent and 100 to 1200 ml of an organic acid per kg of 1,2-methylenedioxybenzene.

Abstract: 3,4-dihydroxybenzonitrile useful as a starting compound for synthesis of medicines and agricultural chemicals is produced, with a high yield by chlorinating 3,4-methylenedioxybenzonitrile with sulfuryl chloride or a mixture of molecular chlorine with a chlorination-promoter including phosphorus trichloride, phosphorus pentachloride, sulfuryl chloride, thionyl chloride, and/or nitrosyl chloride, to prepare 2-chloro-benzo[1,3]dioxole-5-carbonitrile, and hydrolyzing 2-chloro-benzo[1,3]dioxole-5-carbonitrile by contacting it with water to produce 3,4-dihydroxybenzonitrile.