Patents by Inventor Masashi Teramoto
Masashi Teramoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10344184Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.Type: GrantFiled: March 30, 2015Date of Patent: July 9, 2019Assignee: NITTA HAAS INCORPORATEDInventors: Masashi Teramoto, Tatsuya Nakauchi, Noriaki Sugita, Shinichi Haba, Akiko Miyamoto
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Patent number: 10344187Abstract: Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 ?m/min can be achieved.Type: GrantFiled: December 4, 2014Date of Patent: July 9, 2019Assignees: NITTA HAAS INCORPORATED, SUMCO CORPORATIONInventors: Masashi Teramoto, Shinichi Ogata, Ryuichi Tanimoto
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Patent number: 10249486Abstract: Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.Type: GrantFiled: March 30, 2015Date of Patent: April 2, 2019Assignee: NITTA HAAS INCORPORATEDInventors: Masashi Teramoto, Tatsuya Nakauchi, Noriaki Sugita, Shinichi Haba, Akiko Miyamoto
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Patent number: 10077380Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.Type: GrantFiled: March 30, 2015Date of Patent: September 18, 2018Assignee: NITTA HAAS INCORPORATEDInventors: Masashi Teramoto, Tatsuya Nakauchi, Noriaki Sugita, Shinichi Haba, Akiko Miyamoto
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Publication number: 20170174940Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.Type: ApplicationFiled: March 30, 2015Publication date: June 22, 2017Applicant: Nitta Haas IncorporatedInventors: Masashi TERAMOTO, Tatsuya NAKAUCHI, Noriaki SUGITA, Shinichi HABA, Akiko MIYAMOTO
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Publication number: 20170174939Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.Type: ApplicationFiled: March 20, 2015Publication date: June 22, 2017Applicant: Nitta Haas IncorporatedInventors: Masashi TERAMOTO, Tatsuya NAKAUCHI, Noriaki SUGITA, Shinichi HABA, Akiko MIYAMOTO
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Publication number: 20170178888Abstract: Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.Type: ApplicationFiled: March 30, 2015Publication date: June 22, 2017Applicant: Nitta Haas IncorporatedInventors: Masashi TERAMOTO, Tatsuya NAKAUCHI, Noriaki SUGITA, Shinichi HABA, Akiko MIYAMOTO
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Patent number: 9150759Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.Type: GrantFiled: September 27, 2013Date of Patent: October 6, 2015Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc, Nitta Haas IncorporatedInventors: Yasuyuki Itai, Naresh Kumar Penta, Naoko Kawai, Hiroyuki Nakano, Shinichi Haba, Yoshiharu Ota, Takayuki Matsushita, Masashi Teramoto, Sakiko Nakashima, Tomoyuki Toda, Koichi Yoshida, Lee Melbourne Cook
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Publication number: 20150093900Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.Type: ApplicationFiled: September 27, 2013Publication date: April 2, 2015Inventors: Yasuyuki Itai, Naresh Kumar Penta, Naoko Kawai, Hiroyuki Nakano, Shinichi Haba, Yoshiharu Ota, Takayuki Matsushita, Masashi Teramoto, Sakiko Nakashima, Tomoyuki Toda, Koichi Yoshida, Lee Melbourne Cook
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Publication number: 20150083962Abstract: Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 ?m/min can be achieved.Type: ApplicationFiled: December 4, 2014Publication date: March 26, 2015Inventors: Masashi TERAMOTO, Shinichi OGATA, Ryuichi TANIMOTO
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Publication number: 20140030897Abstract: Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 ?m/min can be achieved.Type: ApplicationFiled: February 2, 2012Publication date: January 30, 2014Applicants: Sumco Corporation, Nitta Haas IncorporatedInventors: Masashi Teramoto, Shinichi Ogata, Ryuichi Tanimoto
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Patent number: 8540894Abstract: A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group: where R represents an alkylene group represented by CnH2n, in which n is an integer of 1 or more.Type: GrantFiled: September 29, 2008Date of Patent: September 24, 2013Assignee: Nitta Haas IncorporatedInventors: Takayuki Matsushita, Masashi Teramoto, Haruki Nojo
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Patent number: 8420539Abstract: The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.Type: GrantFiled: April 9, 2012Date of Patent: April 16, 2013Assignee: Nitta Haas IncorporatedInventors: Masashi Teramoto, Ryoko Higashigaki, Hiroshi Makino
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Patent number: 8308972Abstract: The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.Type: GrantFiled: September 26, 2007Date of Patent: November 13, 2012Assignee: Nitta Haas IncorporatedInventors: Masashi Teramoto, Ryoko Higashigaki, Hiroshi Makino
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Publication number: 20120193573Abstract: The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.Type: ApplicationFiled: April 9, 2012Publication date: August 2, 2012Applicant: NITTA HAAS INCORPORATEDInventors: Masashi TERAMOTO, Ryoko HIGASHIGAKI, Hiroshi MAKINO
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Publication number: 20100294983Abstract: A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group: where R represents an alkylene group represented by CnH2n, in which n is an integer of 1 or more.Type: ApplicationFiled: September 29, 2008Publication date: November 25, 2010Inventors: Takayuki Matsushita, Masashi Teramoto, Haruki Nojo
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Publication number: 20100025623Abstract: One embodiment of the present invention discloses an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. In one embodiment, when the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.Type: ApplicationFiled: September 26, 2007Publication date: February 4, 2010Applicant: NITTA HAAS INCORPORATEDInventors: Masashi Teramoto, Ryoko Higashigaki, Hiroshi Makino
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Patent number: 5816175Abstract: A thread control apparatus for a double chain stitch sewing machine of the present invention is applied to the case of sewing a cloth with a double chain stitch sewing machine having multiple needles, and forming a thread chain consecutively to the sewing end of the cloth. Two thread tensioning devices change over and apply mutually different thread tensions to needle threads and to a looper thread passed through a plurality of needles and a looper, respectively, when sewing the cloth and when forming a thread chain. An other looper thread tensioning device disposed in a thread route between a looper thread take-up device and the looper. The other looper thread tensioning device limits the draw-out amount of thread by pinching the looper thread from the looper thread take-up device to the looper side only when forming a thread chain, and therefore a tight thread chain may be securely formed when forming a thread chain.Type: GrantFiled: April 11, 1997Date of Patent: October 6, 1998Assignee: Pegasus Sewing Machine Mfg. Co., Ltd.Inventor: Masashi Teramoto
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Patent number: 5722441Abstract: A process apparatus for processing semiconductor wafers. It includes a process vessel in which process solution is contained. In the process solution, the wafers are immersed and processed. A supply pipe extends from the process vessel to solution storing vessels. Component solutions are stored in the component solution storing vessels and supplied from them to the process vessel to keep the concentration of each component in process solution. A supply pump is attached to the supply pipe. Valves for adjusting the amount of each component supplied are attached to the supply pipe. The adjusting valves are electrically connected to a CPU. Data representing that concentration of each component in process solution which changes with passage of time are previously stored in the CPU. The CPU controls the adjusting valves on the basis of the data to supply component solutions into the process vessel so as to meet any change in the concentration of each component in process solution in the process vessel.Type: GrantFiled: November 19, 1996Date of Patent: March 3, 1998Assignees: Tokyo Electron Limited, Tokyo Electron FE LimitedInventor: Masashi Teramoto