Abstract: An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of Alx1Gay1Inz1N (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of Inx2Ga1-x2N (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of Alx3Gay3Inz3N (0<x3<1, 0<y3<1, 0?z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.

Abstract: Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (0<n?1), and has a C concentration of 1×1017/cm3 or less.

Abstract: Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to the active layer. This LED element is obtained by inducing c-axis growth of nitride semiconductor layers on a support substrate, and comprises a first semiconductor layer constituted of an n-type nitride semiconductor, a current-diffusion layer, an active layer constituted of a nitride semiconductor, and a second semiconductor layer constituted of a p-type nitride semiconductor. The current-diffusion has a hetero-structure having a third semiconductor layer constituted of InxGa1-xN (0<x?0.05) and a fourth semiconductor layer constituted of n-Aly1Gay2Iny3N (0<y1<1, 0<y2<1, 0?y3?0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less.

Abstract: Provided is a nitride semiconductor light emitting element which has good luminous efficiency by suppressing deep-level emission and increasing the monochromaticity. A nitride semiconductor light emitting element according to the present invention comprises an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer contains AlX1InX2GaX3N (wherein 0<X1?1, 0?X2<1, 0?X3<1, X1+X2+X3=1), and both the concentration of C contained therein and the concentration of O contained therein are less than or equal to 1×1017/cm3.

Abstract: The purpose of the present invention is to provide a semiconductor light-emitting device having good life characteristics and higher light extraction efficiency than conventional devices. This semiconductor light-emitting device includes a substrate; semiconductor layers including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode; and a second electrode. The opposite surface of the first semiconductor layer from the active layer comprises a smooth surface portion and a roughened surface portion, the smooth surface portion is provided in a region where the first electrode is formed, the roughened surface portion is provided at least in a part of a region where the first electrode is not formed, and the second semiconductor layer and the second electrode are in contact with each other at a position outside an outer edge of the first electrode.

Abstract: An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of Alx1Gay1Inz1N (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of Inx2Ga1-x2N (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of Alx3Gay3Inz3N (0<x3<1, 0<y3<1, 0?z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.

Abstract: Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (0<n?1), and has a C concentration of 1×1017/cm3 or less.

Abstract: The purpose of the present invention is to provide a semiconductor light-emitting element with further enhanced light extraction efficiency while ensuring horizontal widening of current flowing through an active layer. This method for producing a semiconductor light-emitting element according to the present invention includes: a step (a) for forming a semiconductor layer including an active layer on an upper layer of a growth substrate; a step (b) for forming a first metal layer on a top surface of the semiconductor layer; a step (c) for forming a second metal layer on a portion of a top surface of the first metal layer without preforming annealing after the step (b); and a step (d) for performing annealing after the step (c).

Abstract: Provided is an LED element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. The LED element has: a first semiconductor layer constituted of n-type nitride semiconductor; a light emitting layer constituted of nitride semiconductor; a second semiconductor layer formed on top of the light emitting layer and constituted of p-type nitride semiconductor; a first electrode constituted of a transparent electrode where a bottom surface thereof is in contact with a portion of an upper surface of the first semiconductor layer; and a second electrode formed on top of the second semiconductor layer. At least a region of the first semiconductor layer, which region is in contact with the first electrode, is constituted of AlnGa1-nN (0<n?1) and has an n-type impurity concentration larger than 1×1019/cm3.

Abstract: The semiconductor light-emitting element includes: a substrate; a semiconductor layer that is provided over the substrate; a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and includes a current supply part; a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of the semiconductor layer; and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer.

Abstract: Provided is a nitride light emitting element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. A nitride light emitting element 1 has, on a support substrate 11, an n-type layer 35, a p-type layer 31, and a light emitting layer 33 formed at a position interposed between the n-type layer 35 and the p-type layer 31. The n-type layer 35 is constituted of AlxGa1-xN (0<x?1) having a carrier concentration higher than the dopant Si concentration.

Abstract: Provided is an LED element which achieves high light extraction efficiency even at low operating voltages and which can be produced using a simple process. The LED element has a first semiconductor layer made of a p-type nitride semiconductor, a light-emitting layer made of a nitride semiconductor formed on the upper layer of the first semiconductor layer, a second semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer, and a transparent electrode formed on the whole surface of the second semiconductor layer. The second semiconductor layer in at least a region that is in contact with the transparent electrode is made of AlnGa1-nN (0<n<1) and has an n-type impurity concentration larger than 1×1019/cm3.

Abstract: Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to the active layer. This LED element is obtained by inducing c-axis growth of nitride semiconductor layers on a support substrate, and comprises a first semiconductor layer constituted of an n-type nitride semiconductor, a current-diffusion layer, an active layer constituted of a nitride semiconductor, and a second semiconductor layer constituted of a p-type nitride semiconductor. The current-diffusion has a hetero-structure having a third semiconductor layer constituted of InxGa1-xN (0<x?0.05) and a fourth semiconductor layer constituted of n-Aly1Gay2Iny3N (0<y1<1, 0<y2<1, 0?y3?0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less.

Abstract: Provided is an LED element which achieves high light extraction efficiency even at low operating voltages and which can be produced using a simple process. The LED element has a first semiconductor layer made of a p-type nitride semiconductor, a light-emitting layer made of a nitride semiconductor formed on the upper layer of the first semiconductor layer, a second semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer, and a transparent electrode formed on the whole surface of the second semiconductor layer. The second semiconductor layer in at least a region that is in contact with the transparent electrode is made of AlnGa1-nN (0<n<1) and has an n-type impurity concentration larger than 1×1019/cm3.

Abstract: Provided are a semiconductor light-emitting element having an n-type nitride semiconductor layer capable of suppressing appearance of a crack than before, and a method for producing the same. The method includes a step (a) of forming a GaN layer on a growth substrate; a step (b) of forming a multi-layered film including a first layer of a nitride semiconductor containing In and a second layer formed of a nitride semiconductor on the GaN layer; a step (c) of forming a protective layer formed of a nitride semiconductor on the multi-layered film; and a step (d) of forming an n-type nitride semiconductor layer on the protective layer at a growth temperature higher than that in the step (b) and the step (c), wherein in the step (d), the multi-layered film is thermally decomposed to form an internal void.

Abstract: The LED element has a conductive layer formed on the upper layer of the support substrate; a conductive oxide film layer formed on the upper layer of the conductive layer and made of a material having a thermal expansion coefficient of 1×10?6/K or more and 1×10?5/K or less; a light-emitting layer; a third semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer; and an electrode formed at a position facing the conductive oxide film layer in a vertical direction so that a bottom surface of the electrode is in contact with a portion of an upper surface of the third semiconductor layer.

Abstract: Disclosed herein are a nitride semiconductor device that operates at lower operating voltage and that has higher luminous efficiency. The nitride semiconductor device according to embodiments of the present invention has an electron supply layer composed of N-type semiconductor. The electron supply layer has a composition of AlxGa1-xN (where 0.01<x?1); a concentration of N-type impurity equal to or greater than 1×1019/cm3; and a thickness equal to or greater than 0.5 ?m. Further, the N-type impurity is preferably silicon (Si).

Abstract: The semiconductor light-emitting element includes: a substrate; a semiconductor layer that is provided over the substrate; a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and includes a current supply part; a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of the semiconductor layer; and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer.

Abstract: A nitrogen compound semiconductor light emitting element having an n-type layer, an active layer comprising AlGaInN and a p-type layer, emitting ultraviolet radiation with an emission peak wavelength of at most 400 nm and having a high emission intensity as well as a manufacturing method thereof are provided. In the nitrogen compound semiconductor light emitting element of the present invention having an n-type layer, an active layer and a p-type layer, the active layer consists of a nitrogen compound semiconductor layer with an emission peak wavelength of at most 400 nm comprising AlGaN, and the n-type layer has an n-type AlGaN layer comprising AlGaN and a GaN protective layer which does not contain Al and has a thickness of at least 5 nm. The active layer is formed on the protective layer. The manufacturing method comprises processes of growing the n-type AlGaN layer at a high substrate temperature of at least 1000° C.

Abstract: A GaN-based compound semiconductor device formed by sequentially forming, on a substrate, a GaN-based buffer layer and a GaN-based compound semiconductor layer. AlxGa1-xN1-yPy or AlxGa1-xN1-yAsy (0?x?1, 0<y<1) is used as the GaN-based buffer layer. N in AlxGa1-xN is partially substituted by P or As, whereby a buffer layer is grown at a high temperature. Thus, a difference in processing temperature between the process for growing a buffer layer and processes before and after the process is reduced. The GaN-based compound semiconductor layer formed on the buffer layer comprises a GaN-based layer, an n-type clad layer, a light-emitting layer, and a p-type clad layer. A multiple quantum well (MQW) layer formed from GaNP or GaNAs and GaN is inserted between the GaN-based layers, thereby reducing a dislocation density of the GaN-based layers.