Abstract: A laminated varistor includes a sintered body and first to third internal electrodes provided inside the sintered body. The first internal electrode includes a first facing part facing the third internal electrode in a third direction, and a first connecting part connecting the first facing part and the first external electrode. The second internal electrode includes a second facing part facing the third internal electrode in the third direction, and a second connecting part connecting the second facing part and the second external electrode. The first connecting part includes a first connection portion connected to the first external electrode, and a first narrow part having a dimension in a second direction smaller than the first connection portion. The second connecting part includes a second connection portion connected to the second external electrode, and a second narrow part having a dimension in the second direction smaller than the second connection portion.

Abstract: A first internal electrode includes a pair of first connecting parts extending from a first end surface along a first direction to be connected to a first external electrode, and a first facing part provided between the pair of first connecting parts. A second internal electrode includes a pair of second connecting parts extending from a second end surface along the first direction to be connected to a second external electrode, and a second facing part provided between the pair of second connecting parts. A third internal electrode includes a third facing part disposed along the first direction. The third facing part overlaps the first facing part and the second facing part. A first end of the third facing part is disposed between the pair of first connecting parts, and a second end of the third facing part is disposed between the pair of second connecting parts.

Abstract: A non-woven fabric body (11) that forms a non-woven fabric (1) is formed by integrating composite polyester fibers (2) and flame-retardant acrylic fibers (3) which serve as the other fibers of the rest. The composite polyester fibers (2) have a core-sheath structure in which a sheath portion (4) is formed of a low melting point polyester and a core portion (5) is formed of a high melting point polyester having a higher melting point than that of the low melting point polyester. The composite polyester fibers (2) are contained in an amount of 15% to 80% by weight in a total of 100% by weight of the non-woven fabric body (11). Further, an apparent density of the non-woven fabric body (11) ((a basis weight of the non-woven fabric body)/(a thickness of the non-woven fabric body)) is 0.005 g/cm3 to 0.040 g/cm3.

Abstract: A high voltage field effect transistor according to the present invention has: a p-type low concentration drain region and a low concentration source region formed on both sides of a channel formation region within a n-type region of a semiconductor substrate; a high concentration drain region formed in the low concentration drain region, an impurity concentration of which is higher than that of the low concentration drain region; a gate insulating film that at least covers a surface of the channel formation region; a field oxide film formed on the low concentration drain region so as to be in contact with an end section of the gate insulating film; a gate electrode formed on said gate insulating film and at least a part of said field oxide film so as to cover an entire channel formation region and an end section of said low concentration drain region; and a non-oxide region of the low concentration drain region, on both sides of which there are the gate electrode and the high concentration drain region, and

Abstract: A high voltage field effect transistor according to the present invention has: a p-type low concentration drain region and a low concentration source region formed on both sides of a channel formation region within a n-type region of a semiconductor substrate; a high concentration drain region formed in the low concentration drain region, an impurity concentration of which is higher than that of the low concentration drain region; a gate insulating film that at least covers a surface of the channel formation region; a field oxide film formed on the low concentration drain region so as to be in contact with an end section of the gate insulating film; a gate electrode formed on said gate insulating film and at least a part of said field oxide film so as to cover an entire channel formation region and an end section of said low concentration drain region; and a non-oxide region of the low concentration drain region, on both sides of which there are the gate electrode and the high concentration drain region, and