Patents by Inventor Masashi Yamaguchi

Masashi Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7350438
    Abstract: An internal combustion engine connecting rod is designed with bolts having a minimum required strength. A strength safety factor Sfa is calculated based on an axial strength limit load FX of the bolt and the maximum load FB to be born by the bolt due to a piston inertia force (Sfa=FX/FB) acting on the connecting rod. A mating surface separation safety factor Sfb is calculated based on the tensile load (FB?FC) resulting from the piston inertia force and the load FE carried by the bolts at a mating surface separation limit, i.e., the maximum bolt load FE at which the connecting rod main body and the cap remain in contact without separating (Sfb=FE/(FB?FC)). The mating surface separation safety factor Sfb of the connecting rod is set to be equal to or larger than the strength safety factor Sfa of the bolts (Sfb?Sfa).
    Type: Grant
    Filed: May 10, 2005
    Date of Patent: April 1, 2008
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Masashi Yamaguchi, Satoru Ookuma
  • Patent number: 7284525
    Abstract: There is provided a structure for connecting a piston to a crankshaft in an internal combustion engine, including a piston pin fitted into the piston, a crankpin integral with the crankshaft and a connecting rod having a piston pin bearing portion slidably engaged with an outer cylindrical portion of the piston pin and a crankpin bearing portion slidably engaged with an outer cylindrical portion of the crankpin. At least one of the piston pin bearing portion of the connecting rod and the outer cylindrical portion of the piston pin and at least one of the crankpin bearing portion of the connecting rod and the outer cylindrical portion of the crankpin have hard carbon coatings formed thereon with a hydrogen content of 20 atomic % or less.
    Type: Grant
    Filed: August 10, 2004
    Date of Patent: October 23, 2007
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Kimio Nishimura, Yutaka Mabuchi, Takashi Murata, Takuya Hirata, Makoto Kano, Takahiro Hamada, Masashi Yamaguchi
  • Publication number: 20070224833
    Abstract: A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.
    Type: Application
    Filed: March 23, 2006
    Publication date: September 27, 2007
    Applicants: ASM JAPAN K.K., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yoshinori Morisada, Kamal Goundar, Masashi Yamaguchi, Nobuo Matsuki, Kyu Na, Eun Baek
  • Publication number: 20070172059
    Abstract: A global platform card manager of the IC card chip includes a conditional access software decoding part. A decoding key specific to each conditional access software vendor and a key identification number corresponding to the decoding key are preset in the conditional access software decoding part. The conditional access software encrypted by the conditional access software vendor is decoded using the decoding key designated by the key identification number in the conditional access decoding part, when received.
    Type: Application
    Filed: February 1, 2006
    Publication date: July 26, 2007
    Inventors: Masashi Yamaguchi, Teruhide Kita, Tsuneo Danno
  • Publication number: 20070111540
    Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.
    Type: Application
    Filed: October 19, 2006
    Publication date: May 17, 2007
    Applicant: ASM JAPAN K.K.
    Inventors: Yasuyoshi HYODO, Nobuo MATSUKI, Masashi YAMAGUCHI, Atsuki FUKAZAWA, Naoki OHARA, Yijun LIU
  • Publication number: 20070066086
    Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas consisting of a silicon-containing hydrocarbon linear compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.
    Type: Application
    Filed: October 19, 2006
    Publication date: March 22, 2007
    Applicant: ASM JAPAN K.K.
    Inventors: Yasuyoshi HYODO, Nobuo MATSUKI, Masashi YAMAGUCHI, Atsuki FUKAZAWA, Naoki OHARA, Yijun LIU
  • Publication number: 20070065597
    Abstract: A plasma CVD apparatus for forming a thin film on a wafer having diameter Dw and thickness Tw, includes: a vacuum chamber; a shower plate; a top plate; a top mask portion for covering a top surface peripheral portion of the wafer; and a side mask portion for covering a side surface portion of the wafer. The side mask portion has an inner diameter of Dw+?, and the top mask portion is disposed at a clearance of Tw+? between a bottom surface of the top mask portion and a wafer-supporting surface of the top plate, wherein ? is more than zero, and ? is more than zero.
    Type: Application
    Filed: September 15, 2005
    Publication date: March 22, 2007
    Applicants: ASM JAPAN K.K., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shintaro Kaido, Masashi Yamaguchi, Yoshinori Morisada, Nobuo Matsuki, Kyu Na, Eun Baek
  • Patent number: 7158637
    Abstract: A security communication packet processing apparatus (100) comprises an encryption processing unit (102) that performs encryption processing and decryption processing in a data block unit of B1 bits, an authentication processing unit (104) that performs authentication processing in a data block unit of B2(=n×B1) bits in parallel to the encryption processing or the decryption processing in the encryption processing unit (102) and outputs an authentication value, a data block accumulation unit (103) that accumulates the data blocks from the encryption processing unit (102) and outputs the data blocks to the authentication processing unit (104) when the accumulated amount of the data blocks reaches B2 bits, a packet construction unit (105) that reconstructs a packet with the data blocks from the encryption processing unit (102) and the authentication value from the authentication processing unit (104), and an encryption and authentication processing control unit (101) that divides the inputted packet into the da
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: January 2, 2007
    Assignee: Matsushita Electric Industrila Co., Ltd.
    Inventors: Yuusaku Ohta, Masashi Yamaguchi, Hiroki Yamauchi
  • Patent number: 7148154
    Abstract: A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.
    Type: Grant
    Filed: August 20, 2003
    Date of Patent: December 12, 2006
    Assignee: ASM Japan K.K.
    Inventors: Yasuyoshi Hyodo, Nobuo Matsuki, Masashi Yamaguchi, Atsuki Fukazawa, Naoki Ohara, Yijun Liu
  • Publication number: 20060231972
    Abstract: The invention provides a method of manufacturing polyolefin-polyamide resin composition, which method has a large amount of discharge and is capable of long-time running and excellent in productivity. The method of manufacturing polyolefin-polyamide resin compositions comprises melting and kneading, extruding, and drafted drawing or rolling (a) a polyolefin, (b) a polyamide, (c) a silane coupling agent, (d) a first antioxidant with a melting point of 70-170° C., and (e) a second antioxidant with a melting point of 180-300° C. to disperse the polyamide (b) in the form of fiber with an average fiber diameter of 1 ?m or less in the polyolefin (a) to finish the composition in the form of pellets.
    Type: Application
    Filed: November 9, 2004
    Publication date: October 19, 2006
    Inventors: Norishige Kawaguchi, Masashi Yamaguchi
  • Patent number: 7070193
    Abstract: The Skateboard Truck Mounting System is a mounting system for the attachment of a skateboard wheel truck to the deck of a skateboard. This system provides quick and easy adjustment to incrementally reposition a skateboard wheel truck assembly in a number of predetermined locations along the length of underside of the skateboard deck. This system may be utilized on new or existing decks to achieve personalized sizing and performance characteristics for a skateboard rider.
    Type: Grant
    Filed: September 4, 2004
    Date of Patent: July 4, 2006
    Inventor: Masashi Yamaguchi
  • Patent number: 7064088
    Abstract: A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
    Type: Grant
    Filed: April 11, 2003
    Date of Patent: June 20, 2006
    Assignee: ASM Japan K.K.
    Inventors: Yasuyoshi Hyodo, Atsuki Fukazawa, Yoshinori Morisada, Masashi Yamaguchi, Nobuo Matsuki
  • Publication number: 20060049594
    Abstract: The Skateboard Truck Mounting System is a mounting system for the attachment of a skateboard wheel truck to the deck of a skateboard. This system provides quick and easy adjustment to incrementally reposition a skateboard wheel truck assembly in a number of predetermined locations along the length of underside of the skateboard deck. This system may be utilized on new or existing decks to achieve personalized sizing and performance characteristics for a skateboard rider.
    Type: Application
    Filed: September 4, 2004
    Publication date: March 9, 2006
    Inventor: Masashi Yamaguchi
  • Publication number: 20060027021
    Abstract: A method for characterizing one or more properties of a sample using acoustic waveforms is disclosed, and comprises directing a sequence of at least three optical pulses to the sample to generate an acoustic response in the sample at a frequency corresponding to the pulse sequence, varying the timing of one or more of the pulses in the sequence to vary the frequency of the acoustic response in the sample, and measuring the strength of the acoustic response as a function of the varied frequency to determine information about the sample.
    Type: Application
    Filed: July 21, 2005
    Publication date: February 9, 2006
    Inventors: Jaime Choi, Benjamin Paxton, Thomas Feurer, Masashi Yamaguchi, Keith Nelson
  • Publication number: 20060021704
    Abstract: A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time ? of the etching gas is equal to or greater than about 180 msec, the residence time ? being defined as: ?=pV/Q where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.
    Type: Application
    Filed: September 20, 2005
    Publication date: February 2, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshitaka Saita, Masashi Yamaguchi
  • Patent number: 6972264
    Abstract: A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time ? of the etching gas is equal to or greater than about 180 msec, the residence time ? being defined as: ?=pV/Q where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.
    Type: Grant
    Filed: September 5, 2003
    Date of Patent: December 6, 2005
    Assignee: Tokyo Electron Limited
    Inventors: Yoshitaka Saita, Masashi Yamaguchi
  • Publication number: 20050263126
    Abstract: An internal combustion engine connecting rod is designed with bolts having a minimum required strength. A strength safety factor Sfa is calculated based on an axial strength limit load FX of the bolt and the maximum load FB to be born by the bolt due to a piston inertia force (Sfa=FX/FB) acting on the connecting rod. A mating surface separation safety factor Sfb is calculated based on the tensile load (FB?FC) resulting from the piston inertia force and the load FE carried by the bolts at a mating surface separation limit, i.e., the maximum bolt load FE at which the connecting rod main body and the cap remain in contact without separating (Sfb=FE/(FB?FC)). The mating surface separation safety factor Sfb of the connecting rod is set to be equal to or larger than the strength safety factor Sfa of the bolts (Sfb?Sfa).
    Type: Application
    Filed: May 10, 2005
    Publication date: December 1, 2005
    Applicant: Nissan Motor Co., Ltd.
    Inventors: Masashi Yamaguchi, Satoru Ookuma
  • Patent number: 6895286
    Abstract: The invention provides an optimization device for a unitary apparatus that can obtain optimum characteristics as a combined apparatus, without losing user's selectivity and unitary apparatus's versatility. The optimization device includes an optimization process section that optimizes dynamic characteristics of the unitary apparatus using genetic algorithms and fuzzy inference, with functional characteristics of a combined apparatus as evaluation reference.
    Type: Grant
    Filed: December 1, 2000
    Date of Patent: May 17, 2005
    Assignee: Yamaha Hatsudoki Kabushiki Kaisha
    Inventors: Hirotaka Kaji, Masashi Yamaguchi, Hiroshi Harada, Yukio Matsushita
  • Patent number: 6881683
    Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
    Type: Grant
    Filed: December 11, 2002
    Date of Patent: April 19, 2005
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Yasuyoshi Hyodo, Masashi Yamaguchi, Yoshinori Morisada, Atsuki Fukazawa, Manabu Kato, Shinya Kaneko, Devendra Kumar, Seijiro Umemoto
  • Patent number: D506625
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: June 28, 2005
    Assignee: Kabushiki Kaisha Yamaguchi
    Inventor: Masashi Yamaguchi