Abstract: A resin composition for molding and an electronic component device are provided. The resin composition for molding includes: a curable resin; and an inorganic filler including a calcium titanate particle.

Abstract: A molding resin composition includes: an epoxy resin; a curing agent; and an inorganic filler containing at least one selected from the group consisting of calcium titanate particles and strontium titanate particles, in which a total content of the calcium titanate particles and the strontium titanate particles is 60% by volume to 80% by volume with respect to a total amount of the inorganic filler.

Abstract: A resin composition for molding includes an epoxy resin, a curing agent, and an inorganic filler containing at least one selected from the group consisting of calcium titanate particles and strontium titanate particles, in which a total content of the calcium titanate particles and the strontium titanate particles is 30% by volume or more and less than 60% by volume with respect to the entire inorganic filler.

Abstract: A semiconductor module that restrains the occurrence of detachment and an operation failure. The semiconductor module includes a PCB base, a conductive die pad provided on the PCB base, a semiconductor die provided on the conductive die pad, and a conductive die bonding agent that electrically connects the conductive die pad and the semiconductor die. The semiconductor module further includes a wire bonding pad provided on the PCB base, a wire that electrically connects the wire bonding pad and the semiconductor die, and a sealing resin that seals the conductive die pad, the semiconductor die, the conductive die bonding agent, the wire bonding pad, and the wire. In a planar view, the area of the conductive die pad is 5.0 mm2 or less.

Abstract: An epoxy resin composition includes an epoxy resin; a curing agent; alumina particles; and a silane compound which does not have a functional group that is reactive with an epoxy group and which has a functional group that is unreactive with an epoxy group, wherein the silane compound has a structure in which the functional group that is unreactive with an epoxy resin is bound to a silicon atom, or is bound to a silicon atom via a chain hydrocarbon group having 1 to 5 carbon atoms.

Abstract: A resin composition includes: a resin; and an inorganic filler, in which the inorganic filler includes an inorganic particle having an average particle diameter of from 0.07 ?m to 0.5 ?m.

Abstract: A component module includes a circuit board having a first base, a second base facing the first base, and a side section connected to the first and second bases. A wiring pattern is formed on at least one of a first facing surface of the first base that faces the second base, a second facing surface of the second base that faces the first base, and a side section facing surface of the side section that faces a direction in which the first and second bases extend. The component module further includes an electronic component that is in contact with at least one of the first facing surface, the second facing surface, and the side section facing surface. A sealing resin is formed in a region surrounded by the first facing surface, the second facing surface, and the side section facing surface so as to seal the electronic component.

Abstract: A semiconductor module that restrains the occurrence of detachment and an operation failure. The semiconductor module includes a PCB base, a conductive die pad provided on the PCB base, a semiconductor die provided on the conductive die pad, and a conductive die bonding agent that electrically connects the conductive die pad and the semiconductor die. The semiconductor module further includes a wire bonding pad provided on the PCB base, a wire that electrically connects the wire bonding pad and the semiconductor die, and a sealing resin that seals the conductive die pad, the semiconductor die, the conductive die bonding agent, the wire bonding pad, and the wire. In a planar view, the area of the conductive die pad is 5.0 mm2 or less.

Abstract: A semiconductor module that restrains the occurrence of detachment and an operation failure. The semiconductor module includes a PCB base, a conductive die pad provided on the PCB base, a semiconductor die provided on the conductive die pad, and a conductive die bonding agent that electrically connects the conductive die pad and the semiconductor die. The semiconductor module further includes a wire bonding pad provided on the PCB base, a wire that electrically connects the wire bonding pad and the semiconductor die, and a sealing resin that seals the conductive die pad, the semiconductor die, the conductive die bonding agent, the wire bonding pad, and the wire. In a planar view, the area of the conductive die pad is 5.0 mm2 or less.

Abstract: A component module includes a circuit board having a first base, a second base facing the first base, and a side section connected to the first and second bases. A wiring pattern is formed on at least one of a first facing surface of the first base that faces the second base, a second facing surface of the second base that faces the first base, and a side section facing surface of the side section that faces a direction in which the first and second bases extend. The component module further includes an electronic component that is in contact with at least one of the first facing surface, the second facing surface, and the side section facing surface. A sealing resin is formed in a region surrounded by the first facing surface, the second facing surface, and the side section facing surface so as to seal the electronic component.

Abstract: A semiconductor module that restrains the occurrence of detachment and an operation failure. The semiconductor module includes a PCB base, a conductive die pad provided on the PCB base, a semiconductor die provided on the conductive die pad, and a conductive die bonding agent that electrically connects the conductive die pad and the semiconductor die. The semiconductor module further includes a wire bonding pad provided on the PCB base, a wire that electrically connects the wire bonding pad and the semiconductor die, and a sealing resin that seals the conductive die pad, the semiconductor die, the conductive die bonding agent, the wire bonding pad, and the wire. In a planar view, the area of the conductive die pad is 5.0 mm2 or less.

Abstract: There is provided a production method for an optical semiconductor device including a substrate having a silver plating layer formed on a surface and a light emitting diode bonded to the silver plating layer. The production method includes a film formation step of forming a clay film covering the silver plating layer and a connection step of electrically connecting the light emitting diode and the silver plating layer covered with the clay film by wire bonding, after the film formation step.

Abstract: An optical semiconductor device includes a substrate that has a silver plating layer formed on a surface, a light emitting diode that is bonded to the silver plating layer, a light reflecting portion that surrounds the light emitting diode, a transparent sealing portion that is filled into the light reflecting portion and seals the light emitting diode, and a clay film that covers the silver plating layer. The transparent sealing portion and the light reflecting portion are bonded to each other.

Abstract: An electronic device includes a surface-mounted component and a mounting component on which the surface-mounted component is mounted, the surface-mounted component includes a first bump and a second bump, a cross-sectional area of which in an in-plane direction of a surface facing the mounting component is larger than that of the first bump, on the surface facing the mounting component, the mounting component includes a first pad that is soldered to the first bump and a second pad soldered to the second bump on the surface facing the surface-mounted component, and a ratio of an area of the second pad to the cross-sectional area of the second bump is larger than a ratio of an area of the first pad to the cross-sectional area of the first bump.

Abstract: The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound.

Abstract: There is provided a production method for an optical semiconductor device including a substrate having a silver plating layer formed on a surface and a light emitting diode bonded to the silver plating layer. The production method includes a film formation step of forming a clay film covering the silver plating layer and a connection step of electrically connecting the light emitting diode and the silver plating layer covered with the clay film by wire bonding, after the film formation step.

Abstract: A silver-sulfidation-preventing material of the present invention comprises clay and a binder.

Abstract: An optical semiconductor device includes a substrate that has a silver plating layer formed on a surface, a light emitting diode that is bonded to the silver plating layer, a light reflecting portion that surrounds the light emitting diode, a transparent sealing portion that is filled into the light reflecting portion and seals the light emitting diode, and a clay film that covers the silver plating layer. The transparent sealing portion and the light reflecting portion are bonded to each other.

Abstract: An electronic device includes a surface-mounted component and a mounting component on which the surface-mounted component is mounted, the surface-mounted component includes a first bump and a second bump, a cross-sectional area of which in an in-plane direction of a surface facing the mounting component is larger than that of the first bump, on the surface facing the mounting component, the mounting component includes a first pad that is soldered to the first bump and a second pad soldered to the second bump on the surface facing the surface-mounted component, and a ratio of an area of the second pad to the cross-sectional area of the second bump is larger than a ratio of an area of the first pad to the cross-sectional area of the first bump.

Abstract: The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound.