Abstract: The magnetoresistive effect element comprises a first ferromagnetic layer 50, a nonmagnetic layer 52 formed on the first ferromagnetic layer 50, a second ferromagnetic layer 54 formed on the nonmagnetic layer 52, and a sidewall insulating film 64 formed on the side wall of the second ferromagnetic layer 54. The end of the first ferromagnetic layer 50 is aligned with the end of the sidewall insulating film 64. Whereby the disalignment between the first ferromagnetic layer and the second ferromagnetic layer can be prevented.

Abstract: A dedicated read IC chip is mounted on a head suspension. The dedicated read IC chip is located closer to a read element. A stray capacitance of a wiring can be reduced. Even if the electric resistance value of the read element increases, the magnetic information data of a higher density can be read out. Moreover, the dedicated read IC chip generates little heat. Even if the dedicated read IC chip is located on the head suspension, an excessive heat cannot be transmitted to the head suspension from the dedicated read IC chip. The mechanical properties and shape of the head suspension can be maintained as expected.

Abstract: A magnetosensitive device is disclosed that includes a ferromagnetic tunnel junction formed of two ferromagnetic films and an insulating film sandwiched therebetween. The insulating film is an aluminum nitride film. The barrier height of the ferromagnetic tunnel junction is less than or equal to 0.4 eV.

Abstract: A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect.

Abstract: A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect.

Abstract: A dedicated read IC chip is mounted on a head suspension. The dedicated read IC chip is located closer to a read element. A stray capacitance of a wiring can be reduced. Even if the electric resistance value of the read element increases, the magnetic information data of a higher density can be read out. Moreover, the dedicated read IC chip generates little heat. Even if the dedicated read IC chip is located on the head suspension, an excessive heat cannot be transmitted to the head suspension from the dedicated read IC chip. The mechanical properties and shape of the head suspension can be maintained as expected.

Abstract: A magnetic sensor which comprises (1) a supporting substrate, (2) a ferromagnetic tunnel junction element which has a first magnetic layer on the supporting substrate, a tunnel insulation layer on the first magnetic layer, the tunnel insulation layer comprising aluminum oxide obtained by oxidizing an aluminum film formed on the first magnetic layer by sputtering using an aluminum target having a purity of 99.999% or more, and a second magnetic layer on the tunnel insulation layer, and (3) a converter element converting a change in a magnetic field to a change in resistance. Alternatively, as the ferromagnetic tunnel junction element of (2), one whose tunnel junction has a voltage-resistance characteristic which is asymmetric in the direction of the applied voltage is used.

Abstract: A magnetoresistive effect element is a compound lamination including a first anti-ferromagnetic layer, a first fixed magnetic layer, a tunnel insulation layer, a free magnetic layer, a non-magnetic metal layer, a second fixed magnetic layer, and a second anti-ferromagnetic layer such that a TMR element and a SVMR element are formed, sharing the free magnetic layer.

Abstract: A magnetic element includes a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer laminated in this order. At least one of the first and second ferromagnetic layers includes a lower ferromagnetic layer, a non-magnetic conductive layer, and an upper ferromagnetic layer laminated in this order. By changing the kind or the composition of material of the upper and lower ferromagnetic layers, the amount of magnetization of each layer can be controlled to reduce affection by magnetostatic coupling. Changeability of magnetized direction of the first or second ferromagnetic layer can be regulated thereby. This realizes an improvement of sensitivity.

Abstract: A magnetic element comprises a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer laminated in this order. At least one of the first and second ferromagnetic layers comprises a lower ferromagnetic layer, a nonmagnetic conductive layer, and an upper ferromagnetic layer laminated in this order. By changing kind or composition of material of the upper and lower ferromagnetic layers, the amount of magnetization of each layer can be controlled to reduce affection by magnetostatic coupling. Changeability of magnetized direction of the first or second ferromagnetic layer can be regulated thereby. This realizes an improvement of sensitivity.

Abstract: A ferromagnetic tunnel-junction magnetic sensor includes a first ferromagnetic layer, an insulation barrier layer formed on the first ferromagnetic layer and including therein a tunnel oxide film, and a second ferromagnetic layer formed on the insulation barrier layer, wherein the insulation barrier layer includes a metal layer carrying the tunnel oxide film thereon such that the tunnel oxide film is formed of an oxide of a metal element constituting the metal layer, and wherein the insulation barrier layer has a thickness of about 1.7 nm or less but larger than 1 molecular layer in terms of the oxide forming the tunnel oxide film.

Abstract: A magnetic sensor including a first magnetic layer having an axis of easy magnetization in a first direction; a second magnetic layer having an axis of easy magnetization in a second direction different from the first direction; a third magnetic layer positioned between the first magnetic layer and the second magnetic layer, and having a smaller coercive force than the first magnetic layer and the second magnetic layer; a first insulating layer interposed between the first magnetic layer and the third magnetic layer; and a second insulating layer interposed between the second magnetic layer and the third magnetic layer. An external magnetic field is detected by the use of tunnel resistance between the first magnetic layer and the third magnetic layer and tunnel resistance between the second magnetic layer and the third magnetic layer.

Abstract: A tunnel junction structure is provided. A first magnetic layer is formed on a support substrate. A tunnel insulating layer is disposed on the first magnetic layer, the tunnel insulating layer containing a metal element as a constituent. A second magnetic layer is disposed on the tunnel insulating layer. A diffusion preventing layer disposed between the first magnetic layer and the tunnel insulating layer. The diffusion preventing layer suppresses mutual diffusion between metal atoms in the first magnetic layer and metal atoms in the tunnel insulating layer. The tunnel insulating layer and the diffusion preventing layer each have a thickness allowing tunnel current to flow between the first and second magnetic layers.

Abstract: The magnetic sensor comprise a multi-layer structure 10 including a ferromagnetic layer 12 of FeCo alloy, an insulation layer 14 of Al.sub.2 O.sub.3 and a compound semiconductor layer 16 of GaAs. Circularly polarized light is irradiated to the compound semiconductor layer 16 to generate electrons. A dc voltage is applied to the ferromagnetic layer 12 and the compound semiconductor layer 16 by a dc power source 20 while circularly polarized light is irradiated to the compound semiconductor layer 16. When a direction of an external magnetic field changes, a magnetization direction of the ferromagnetic layer 12 accordingly changes, and a magnetoresistance between the ferromagnetic layer 12 and the compound semiconductor layer 16 changes. Changes of the magnetoresistance are measured by a voltmeter 22.

Abstract: A ferromagnetic tunnel-junction magnetic sensor includes a first ferromagnetic layer, an insulation barrier layer formed on the first ferromagnetic layer and including therein a tunnel oxide film, and a second ferromagnetic layer formed on the insulation barrier layer, wherein the insulation barrier layer includes a metal layer carrying the tunnel oxide film thereon such that the tunnel oxide film is formed of an oxide of a metal element constituting the metal layer, and wherein the insulation barrier layer has a thickness of about 1.7 nm or less but larger than 1 molecular layer in terms of the oxide forming the tunnel oxide film.