Patents by Inventor Masasumi Araki

Masasumi Araki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implantation device control method, control system thereof, control program thereof, and ion implantation device
    Patent number: 7777206
    Abstract: A control method of an ion implantation device that radiates an ion beam emitted from an ion source via an optical element onto a material to be treated, includes the steps of: measuring the spatial distribution of the ion beam in the vicinity of the material to be treated; estimating the emittance, which is the spatial and angular distribution of the ion beam of the ion source, from the measured spatial distribution, by using an ion beam trajectory calculation method; calculating the operating conditions of the optical element so that the ion beam in the vicinity of the material to be treated has a desired spatial distribution, by using the estimated emittance and the trajectory calculation method; and operating the ion implantation device by using the calculated operating conditions of the optical element.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: August 17, 2010
    Assignee: ULVAC, Inc.
    Inventors: Seiji Ogata, Hidekazu Yokoo, Masasumi Araki
  • ION IMPLANTATION DEVICE CONTROL METHOD, CONTROL SYSTEM THEREOF, CONTROL PROGRAM THEREOF, AND ION IMPLANTATION DEVICE
    Publication number: 20090189066
    Abstract: A control method of an ion implantation device that radiates an ion beam emitted from an ion source via an optical element onto a material to be treated, includes the steps of: measuring the spatial distribution of the ion beam in the vicinity of the material to be treated; estimating the emittance, which is the spatial and angular distribution of the ion beam of the ion source, from the measured spatial distribution, by using an ion beam trajectory calculation method; calculating the operating conditions of the optical element so that the ion beam in the vicinity of the material to be treated has a desired spatial distribution, by using the estimated emittance and the trajectory calculation method; and operating the ion implantation device by using the calculated operating conditions of the optical element.
    Type: Application
    Filed: February 23, 2006
    Publication date: July 30, 2009
    Applicant: ULVAC, INC.
    Inventors: Seiji Ogata, Hidekazu Yokoo, Masasumi Araki