Abstract: A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF?CFCF?CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.

Abstract: In a stage member for use in an exposure apparatus, a honeycomb structural body has walls that are extended in a direction perpendicular to a longitudinal direction of the stage member and that surround square shaped prismatic spaces, so as to accomplish a high resistance and a high resonant frequency with respect to torsional vibration. The honeycomb structural body of the stage member is preferably made of a ceramic material.

Abstract: A vehicle-installed radar sensor system includes a transmission section, a reception section, and a shield member. The transmission section is disposed in a closed space formed between a permeable member provided in a vehicle and a vehicle body, and transmits a radar wave to outside of the vehicle through the permeable member. The reception section is disposed in the closed space at a distance from the transmission section, and receives a reflected wave by a target through the permeable member. The shield member is disposed in at least one of the transmission section and the reception section, and suppresses at least one of occurrence of a reflected wave by the permeable member and reception of the reflected wave by the permeable member.

Abstract: A vehicle-installed radar sensor system includes a transmission section, a reception section, and a shield member. The transmission section is disposed in a closed space formed between a permeable member provided in a vehicle and a vehicle body, and transmits a radar wave to outside of the vehicle through the permeable member. The reception section is disposed in the closed space at a distance from the transmission section, and receives a reflected wave by a target through the permeable member. The shield member is disposed in at least one of the transmission section and the reception section, and suppresses at least one of occurrence of a reflected wave by the permeable member and reception of the reflected wave by the permeable member.

Abstract: A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.

Abstract: A photoconductive layer of an electrophotographic photoreceptor has a super lattice structure obtained by alternately stacking thin layers (the thickness falls within the range of 30 to 200 .ANG.) of at least two types of amorphous semiconductors having different optical band gaps. In the super lattice structure, when the layer having a narrow bandgap is sandwiched between the layers having wide bandgaps, a quantum well is formed. By the quantum effect, electrons in the well are shifted to cause high mobility of carriers. When the super lattice structure is applied to the photoconductive layer of the electrophotographic photoreceptor, the number of carriers generated at the interface between the thin layers is large.

Abstract: Adjacent memory layers of a multi-layered integrated device as optically coupled, so that data written on one layer can be copied onto its adjacent layers through the optical coupling.

Abstract: An amorphous silicon film forming apparatus forms an amorphous silicon film on a substrate. The apparatus is provided with a sealed vessel whose inside space is defined as a reaction chamber. A gas inlet pipe for introducing a gas containing SiH4 into the reaction chamber is connected to the vessel. A facing electrode provided in the reaction chamber and a power source connected to the facing electrode convert in a plasma generating region the gas introduced into the reaction chamber by the gas inlet pipe into plasma. A conductive mesh structure is disposed in the reaction chamber so as to surround the plasma generating region.

Abstract: A formation process of an amorphous silicon film, which process comprises subjecting a higher silane containing at least two silicon atoms to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.

Abstract: A method of forming an amorphous silicon film includes the steps of bringing a gas which is pre-excited by electron cyclotron resonance generated by an alternating electric field and a magnetic field into contact with a raw material gas containing silicone atoms in a reaction chamber in which a substrate is placed, so that the raw material gas is converted to radicals, and forming an amorphous silicon film on a surface of the substrate by the reaction of radicals therewith. Microwaves can be used as the alternating electric field.

Abstract: A solid state image pickup device comprising a semiconductor substrate provided with light detecting sections and a scanning circuit for sequentially selecting the signals detected by the light detecting sections, wherein each light detecting section contains a silicon layer in which microcrystalline silicon and amorphous silicon are uniformly distributed and the crystal structure varies substantially continuously throughout. The light detecting section may further contain a hydrogenated amorphous silicon layer containing 6 to 37 atomic % of nitrogen, which is positioned on the silicon layer defined above. The light detecting section is connected with electrodes, one of which is transparent.