Abstract: A biological information measurement apparatus includes: a pressure sensor including a pressure detecting element; a pressing mechanism which presses the pressure sensor against an artery in a living body; a press controller which controls a pressing force of the pressing mechanism; a blood flow sensor; a blood flow information measurer which measures blood flow information based on output of the blood flow sensor; a pressing force decider which decides a first pressing force based on blood flow information measured during a pressing force control time period when the pressing force is changed in one direction, and information of a pressure pulse wave detected during the pressing force control time period; and a record controller which records a pressure pulse wave detected in a first state where the pressing force is controlled to the first pressing force, and blood flow information measured in the first state.

Abstract: A biological information measurement apparatus includes: a pressure sensor including a pressure detecting element; a pressing mechanism which presses the pressure sensor against an artery in a living body; a press controller which controls a pressing force of the pressing mechanism; a blood flow sensor; a blood flow information measurer which measures blood flow information based on output of the blood flow sensor; a pressing force decider which decides a first pressing force based on blood flow information measured during a pressing force control time period when the pressing force is changed in one direction, and information of a pressure pulse wave detected during the pressing force control time period; and a record controller which records a pressure pulse wave detected in a first state where the pressing force is controlled to the first pressing force, and blood flow information measured in the first state.

Abstract: An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal plane of the sapphire substrate semiconductor is inclined from (01-12) plane toward (0001) plane by an off-angle ? that is in a range of 0°<x?5°. With this constitution, an epitaxial substrate for manufacturing field effect transistor having high smoothness is provided.