Abstract: There is provided a lower electrode mechanism for plasma processing, the lower electrode mechanism including: a base portion to which radio-frequency power is applied during the plasma processing; a dielectric portion disposed at an upper surface of the base portion; and an induction heating mechanism, in which the induction heating mechanism includes an induction heating element heated by an induction magnetic field, and a magnetic field generator that is disposed inside the base portion and generates the induction magnetic field.

Abstract: A substrate processing apparatus for processing a substrate includes: a processing chamber in which a processing space for the substrate is formed; a heating mechanism that adjusts an inner temperature of the processing chamber; and an inner member provided inside the processing chamber, wherein the heating mechanism includes an induction heating element that heats at least the inner member by generating heat with an induction magnetic field, and a magnetic field generator that generates the induction magnetic field.