Abstract: An induction heating coil unit 2 according to the present invention is an induction heating coil unit 2being configured to be able to heat a heating object 1 by induction heating, wherein the induction heating coil unit 2 includes: an induction heating coil 20 wherein conductors 200 are wound around a predetermined axis line AL; and end wall portions 21 made of a soft magnetic material, the end wall portions 21 being disposed to cover at least a part of end portions on both sides of the induction heating coil 20 in an axial direction, and wherein each of the conductors 200 has an opposing surface 201 opposing to an outer peripheral surface or an inner peripheral surface of the heating object 1, and wherein the opposing surface 201 includes a parallel portion 201a extending parallel to the axis line AL.

Abstract: An induction heating device according to the present invention includes: an induction heating coil 10 with a conductor 100 wound around a predetermined axis line AL; a member 11 including at least one soft magnetic material 110, the at least one soft magnetic material 110 being disposed at or on an outer side of each of axial end portions 102 of the induction heating coil 10 in an extending direction of the axis line AL; and a heating object 2 disposed on an inner side of the induction heating coil 10 and the member 11, the heating object 2 being configured to be heatable by induction heating using a magnetic flux from the induction heating coil 10.

Abstract: The drift region for increasing the breakdown voltage in an LDMOSFET is regarded as a resistive element. The potential distribution of the overall device is calculated by obtaining a potential distribution considering the resistance by iterative calculation. A capacitance generated in the drift region is analytically calculated assuming a linear potential distribution. A capacitance generated in the overlap region between the gate electrode and the drift region is calculated by considering the potential from the depletion region to the accumulation region.

Abstract: The drift region for increasing the breakdown voltage in an LDMOSFET is regarded as a resistive element. The potential distribution of the overall device is calculated by obtaining a potential distribution considering the resistance by iterative calculation. A capacitance generated in the drift region is analytically calculated assuming a linear potential distribution. A capacitance generated in the overlap region between the gate electrode and the drift region is calculated by considering the potential from the depletion region to the accumulation region.