Abstract: There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 ?·cm or more and 100 ?·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 ?·cm or more and 100 ?·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.

Abstract: There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 ?·cm or more and 100 ?·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 ?·cm or more and 100 ?·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.