Patents by Inventor Masataka Nakada
Masataka Nakada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968863Abstract: A display panel is provided. The display panel includes a display region, a functional layer, a first insulating film, and a first conductive film; the display region includes a pixel; the pixel includes a display element and a pixel circuit; the display element includes a first electrode and a second electrode; the second electrode includes a first opening portion; the functional layer includes the pixel circuit, a second opening portion, and an auxiliary wiring; the pixel circuit is electrically connected to the display element in the second opening portion; the auxiliary wiring includes a region overlapping with the first opening portion; the first insulating film includes a third opening portion; the third opening portion includes a region overlapping with the first opening portion; and the first conductive film is electrically connected to the second electrode and the auxiliary wiring in the third opening portion.Type: GrantFiled: August 21, 2019Date of Patent: April 23, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hisao Ikeda, Masataka Nakada, Tomoya Aoyama
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Patent number: 11940703Abstract: A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween.Type: GrantFiled: May 26, 2023Date of Patent: March 26, 2024Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kouhei Toyotaka, Kazunori Watanabe, Susumu Kawashima, Kei Takahashi, Koji Kusunoki, Masataka Nakada, Ami Sato
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Patent number: 11942554Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved. A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.Type: GrantFiled: January 27, 2022Date of Patent: March 26, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuharu Hosaka, Yukinori Shima, Masataka Nakada, Masami Jintyou
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Patent number: 11908976Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.Type: GrantFiled: January 13, 2023Date of Patent: February 20, 2024Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
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Publication number: 20240038777Abstract: To provide a semiconductor device that occupies a small area. The semiconductor device includes a first conductive layer, first to fifth insulating layers, and a second conductive layer that are stacked in this order and further includes a semiconductor layer, a third conductive layer, and a sixth insulating layer. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surfaces of the first to fifth insulating layers, and the second conductive layer. The sixth insulating layer is over the semiconductor layer. The third conductive layer is over the sixth insulating layer and overlaps with the semiconductor layer with the sixth insulating layer between the third conductive layer and the semiconductor layer. The first insulating layer includes a region having a higher hydrogen content than the second insulating layer. The fifth insulating layer includes a region having a higher hydrogen content than the fourth insulating layer.Type: ApplicationFiled: July 20, 2023Publication date: February 1, 2024Inventors: Masakatsu OHNO, Masataka NAKADA, Yukinori SHIMA, Masayoshi DOBASHI, Junichi KOEZUKA, Masami JINTYOU
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Patent number: 11852937Abstract: The manufacturing yield of a display device is improved. The resistance of a display device to ESD is increased. The display device includes a substrate, a display portion, a connection terminal, a first wiring, and a second wiring. The first wiring is electrically connected to the connection terminal and includes a portion positioned between the connection terminal and the display portion. The second wiring is electrically connected to the connection terminal, is positioned between the connection terminal and an end portion of the substrate, and includes a portion in which a side surface is exposed at an end portion of the substrate. The display portion includes a transistor. The transistor includes a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer and the second wiring include a metal oxide.Type: GrantFiled: July 13, 2022Date of Patent: December 26, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kenichi Okazaki, Yukinori Shima, Daisuke Kurosaki, Masataka Nakada
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Publication number: 20230354643Abstract: An inexpensive display device with a narrow bezel is provided. The display device includes a first pixel including a light-emitting device, a second pixel including a light-receiving device, and a reading circuit for reading data obtained by the second pixel. The reading circuit includes a first circuit included in a mounted IC chip and a second circuit monolithically formed over a substrate over which a pixel circuit is formed. With this structure, a circuit corresponding to the second circuit can be omitted from the IC chip, so that the IC chip can be downsized.Type: ApplicationFiled: April 25, 2023Publication date: November 2, 2023Inventors: Manabu SATO, Hironori MATSUMOTO, Masataka NAKADA
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Publication number: 20230350256Abstract: A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween.Type: ApplicationFiled: May 26, 2023Publication date: November 2, 2023Inventors: Kouhei TOYOTAKA, Kazunori WATANABE, Susumu KAWASHIMA, Kei TAKAHASHI, Koji KUSUNOKI, Masataka NAKADA, Ami SATO
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Publication number: 20230343875Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.Type: ApplicationFiled: June 9, 2023Publication date: October 26, 2023Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masahiro KATAYAMA, Masataka NAKADA
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Patent number: 11733574Abstract: A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween.Type: GrantFiled: December 25, 2018Date of Patent: August 22, 2023Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kouhei Toyotaka, Kazunori Watanabe, Susumu Kawashima, Kei Takahashi, Koji Kusunoki, Masataka Nakada, Ami Sato
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Patent number: 11699762Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulting film is provided between the first and the second conductive films.Type: GrantFiled: August 3, 2021Date of Patent: July 11, 2023Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masahiro Katayama, Masataka Nakada
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Patent number: 11690243Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.Type: GrantFiled: October 9, 2020Date of Patent: June 27, 2023Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Masataka Nakada, Takayuki Abe, Naoyuki Senda
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Publication number: 20230170444Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.Type: ApplicationFiled: January 13, 2023Publication date: June 1, 2023Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiaki Oikawa, Shingo EGUCHI, Mitsuo MASHIYAMA, Masatoshi KATANIWA, Hironobu SHOJI, Masataka NAKADA, Satoshi SEO
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Publication number: 20230125324Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first transistor, a second transistor, a capacitor, and first to fourth wirings. The first transistor includes a first gate and a second gate, and one of a source and a drain of the first transistor is connected to the first wiring and the second gate, and the other of the source and the drain is connected to one of a source and a drain of the second transistor and one electrode of the capacitor. A gate of the second transistor is connected to the other electrode of the capacitor, and the other of the source and the drain of the second transistor is electrically connected to the second wiring. The first wiring is supplied with a first potential, and the second wiring is supplied with a second potential and a third potential alternately. The third wiring is connected to the first gate and supplied with a first signal.Type: ApplicationFiled: November 20, 2020Publication date: April 27, 2023Inventors: Manabu SATO, Susumu KAWASHIMA, Koji KUSUNOKI, Hidenori MORI, Hironori MATSUMOTO, Daisuke KUROSAKI, Masami JINTYOU, Masataka NAKADA
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Patent number: 11557697Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.Type: GrantFiled: August 18, 2021Date of Patent: January 17, 2023Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
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Publication number: 20220350213Abstract: The manufacturing yield of a display device is improved. The resistance of a display device to ESD is increased. The display device includes a substrate, a display portion, a connection terminal, a first wiring, and a second wiring. The first wiring is electrically connected to the connection terminal and includes a portion positioned between the connection terminal and the display portion. The second wiring is electrically connected to the connection terminal, is positioned between the connection terminal and an end portion of the substrate, and includes a portion in which a side surface is exposed at an end portion of the substrate. The display portion includes a transistor. The transistor includes a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer and the second wiring include a metal oxide.Type: ApplicationFiled: July 13, 2022Publication date: November 3, 2022Inventors: Kenichi OKAZAKI, Yukinori SHIMA, Daisuke KUROSAKI, Masataka NAKADA
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Publication number: 20220320340Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer over the semiconductor layer, and a conductive layer over the first insulating layer. The semiconductor layer includes a first region, a pair of second regions, a pair of third regions, and a pair of fourth regions. The second regions sandwich the first region, the third regions sandwich the first region and the second regions, and the fourth regions sandwich the first region, the second regions, and the third regions. The first region includes a region overlapping with the first insulating layer and the conductive layer, the second regions and the third regions each include a region overlapping with the first insulating layer and not overlapping with the conductive layer, and the fourth regions overlap with neither the first insulating layer nor the conductive layer.Type: ApplicationFiled: July 27, 2020Publication date: October 6, 2022Inventors: Naoto GOTO, Naoki IKEZAWA, Masataka NAKADA, Ami SATO, Chieko MISAWA
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Publication number: 20220293641Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.Type: ApplicationFiled: June 2, 2022Publication date: September 15, 2022Inventors: Junichi KOEZUKA, Masami JINTYOU, Yukinori SHIMA, Daisuke KUROSAKI, Masataka NAKADA, Shunpei YAMAZAKI
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Patent number: 11392004Abstract: The manufacturing yield of a display device is improved. The resistance of a display device to ESD is increased. The display device includes a substrate, a display portion, a connection terminal, a first wiring, and a second wiring. The first wiring is electrically connected to the connection terminal and includes a portion positioned between the connection terminal and the display portion. The second wiring is electrically connected to the connection terminal, is positioned between the connection terminal and an end portion of the substrate, and includes a portion in which a side surface is exposed at an end portion of the substrate. The display portion includes a transistor. The transistor includes a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer and the second wiring include a metal oxide.Type: GrantFiled: November 25, 2019Date of Patent: July 19, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kenichi Okazaki, Yukinori Shima, Daisuke Kurosaki, Masataka Nakada
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Patent number: 11355529Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.Type: GrantFiled: August 28, 2020Date of Patent: June 7, 2022Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Junichi Koezuka, Masami Jintyou, Yukinori Shima, Daisuke Kurosaki, Masataka Nakada, Shunpei Yamazaki